JANTX2N3439U4 - Microsemi Corp.

2N3439U4 thru 2N3440U4

Compliant

NPN LOW POWER SI L ICO N

TRANSISTOR

Qualified per MIL-PRF-19500/368

Qualified Levels:

JAN, JANT X, JANTXV

and JANS*

(*2N3440U4 only)

DESCRIPTION

This fam ily of 2N 34 39U4 thr o ug h 2N 3 44 0U 4 high-frequenc y, ep i taxial pl anar trans istors

fe ature low saturat ion voltage. Th e U4 package is hermetic ally sealed and pr ovides a lo w

profile for mi ni mizing boar d height. Thes e devices are al so available in U A, TO-5 and TO-39

packag in g. Mi cros emi als o offers numerous other trans istor p r oducts to meet higher and

lower power ratings with various switching speed requirem ents in both through-hole and

surface-mount pac kages.

U4 Package

Also available in:

UA package

(sur face mount)

2N3439UA – 2N3440UA

TO-5 package

(long leaded)

2N3439L – 2N3440L

TO-39 pac kage

(leaded)

2N3439 – 2N3440

Important: For the latest information, v isit our website http://www.microsemi.com.

FEATURES

• JEDEC registered 2N3439U4 through 2N3440U4 serie s.

• RoHS compliant by design.

• Vce(sat) = 0.5 V @ Ic = 50 mA.

• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.

• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.

APPLICATI ONS / BENEFITS

• General purpose transistors for medium power applications requiring high frequency switching and

low package profile.

• Military and other high-reliability applications.

MAXI MUM RATING S @ T

= +25°C unless otherwise noted.

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters / Test Conditions Symbol 2N3439U4 2N3440U4 Unit

Collector-Emitter Voltage VCEO 350 250 V

Collector-Base Voltage V

CBO

450 300 V

Emitter-Base Voltage VEBO 7.0 V

Collector Current IC 1.0 A

Total P ower Dissipation

@ T A = +25 °C

(1)

@ T C = +25 °C (2) PD 0.8

5.0 W

Operating & Storage J unction Temperature Range TJ, Tstg -65 to +200 °C

Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C.

2. Derate linearly @ 28.5 mW/°C for TC > +25 °C.

2N3439U4 thru 2N3440U4

M ECHANICAL and PACKAGI NG

• CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel pl ated kovar lid.

• TERMINALS: Gold over nickel plated surfac e mount terminations.

• MARKING: Part number, date code, manufacturer’s ID.

• POLARITY: See package dim ensions.

• TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.

• WEIGHT: 0.125 grams (125 milligrams).

• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N3439 U4

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

JANS* = JANS Level

(*2N3440U4 only)

Blank = commercial

JEDEC type number

(see Electrical Characteristics

table)

Surfac e Mount Package type

SYMBOLS & DEFINITIONS

Symbol

Definition

Cibo Common-base open-ci r cuit input capaci tance.

Cobo Common-base open-ci r cuit ou tput capac itance.

ICEO Collector c utoff current, base op en.

ICEX Collector cutoff current, circuit between bas e and emi tter.

IEBO

Emitter cutoff current, coll ect or open.

hFE

Common-emitter static forward curr ent t r ansfer ratio.

VBE

Base-emitter vo l tage, d c.

VCE

Collector-emi tter v ol tage, d c.

VCEO

Collector-emi tter v ol tage, b ase open .

VCBO

Collector-emitt er voltage, emit ter open.

VEB Emitter-bas e voltag e, dc .

EBO

Emitter-base voltag e, c ol lector open.

2N3439U4 thru 2N3440U4

ELECTRICAL CHAR ACTERISTICS

@ TA = +25°C, unless otherwise noted.

OFF CHARACTE RISTICS

Paramete r s / Test Conditions

Symbol

Min.

Max.

Unit

Collector-Emitt er Breakdown Voltage

IC = 10 mA

V(BR)CEO

350

250

RBB1 = 470 Ω; VBB1 = 6 V

L = 25 mH (mi n); f = 30 – 60 Hz 2N3439U4

2N3440U4

Collector-Emitt er Cu toff Current

ICEO

2.0

2.0 µA

VCE = 300 V

VCE = 200 V 2N3439U4

2N3440U4

Emitter-Bas e C utoff Current

VEB = 7.0 V

IEBO 10 µA

Collector-Emitt er Cu toff Current

ICEX

5.0

5.0 µA

VCE = 450 V, VBE = -1.5 V

VCE = 300 V, VBE = -1.5 V 2N3439U4

2N3440U4

Collector-Base C utoff Current

ICBO

2.0

5.0

µA

= 360 V

VCB = 250 V

VCB = 450 V

VCB = 300 V

2N3439U4

2N3440U4

2N3439U4

2N3440U4

ON CHARACTERISTICS (1)

Paramete r s / Test Conditions Symbol Min. Max. Unit

Forward-Current Transfer R atio

IC = 20 mA, VCE = 10 V

IC = 2.0 mA, VCE = 10 V

IC = 0.2 mA, VCE = 10 V

hFE

160

Collector-Emitter Saturation Voltage

IC = 50 mA, IB = 4.0 mA VCE(sat) 0.5 V

Base-E mit ter Saturation Voltag e

IC = 50 mA, IB = 4.0 mA

VBE(sat) 1.3 V

DYNAMI C CHARACTERISTICS

Paramete r s / Test Conditions Symbol Min. Max. Unit

Magnitude of Common Emi tter Small -Signa l Shor t-

Circuit Forward Curren t Trans fe r R at i o

IC = 10 mA, VCE = 10 V, f = 5.0 MHz |hfe| 3.0 15

Forward Current Tr ansfer Rat io

IC = 5.0 mA, VCE = 10V , f = 1.0 kHz hfe 25

O utput Cap acitance

VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF

I nput Capac i tanc e

VCB = 5.0 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF

(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.

2N3439U4 thru 2N3440U4

ELECTRICAL CHAR ACTERISTICS @

TA = +25°C, unless otherwise noted. (continued)

SWIT CHING CHARACTERISTICS

Paramete r s / Test Conditions Symbol Min. Max. Unit

Turn-On Time

VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton

1.0 µs

Turn-O ff Tim e

VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff

10 µs

SAFE OPERATING AREA

(See graph bel ow and r eferenc e MIL-STD-750, metho d 30 53 )

DC Te sts

TC = +2 5 °C, 1 Cycle, t = 1.0 s

Test 1

VCE = 5.0 V, I C = 1.0 A

B oth Typ es

Test 2

VCE = 350 V, IC = 14 mA

2N3439U4

Test 3

VCE = 250 V, IC = 20 mA

2N3440U4

VCE - COLL ECTOR TO EMITTER VOLTAGE (V)

Maximum Safe Operating Area (continuous dc)

– COLLECTOR CURRENT (mA)

2N3439U4 thru 2N3440U4

GRAPHS

TC (oC) (Case)

FIGURE 1

Temperature-P ower Der at ing Curve

NOTES: Thermal Resistance Junction to Case = 8.0 oC/W

Ma x F inish-All oy Temp = 175 oC

TIME (s)

FIGURE 2

Maximum Th er mal Imped ance

NOTE: TC = +25 °C, Thermal Resistance Rθ JC = 8.0 °C/W

dc Operation Maximum Rating (W)

THETA (oC/W)

2N3439U4 thru 2N3440U4

PACKAGE DIM ENSIONS

NOTES:

1. Dimensions are in inches.

2. Millimeter equivalents are given for general information

only.

3. In accordance with ASME Y14.5M, diameters are

equivalent to Φx symbology.

Dimensions

Ltr

Inches

Millimeters

Min

Max

Min

Max

0.215

0.225

5.46

5.72

0.145

0.155

3.68

3.94

0.049

0.075

1.24

1.91

0.020

0.51

LW1

0.135

0.145

3.43

3.68

LW2

0.047

0.057

1.19

1.45

LL1 0.085 0.125 2.16 3.17

LL2 0.045 0.075 1.14 1.90

LS1 0.070 0.095 1.78 2.41

LS2 0.035 0.048 0.89 1.21

0.030

0.070

0.76

1.78

0.020

0.035

0.51

0.89

TERMINAL

COLLECTOR

BASE

EMITTER