SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 ✪
COMPLIMENTARY TYPE - BSS63
PARTMARKING DETAIL - BSS64 - U3
BSS64R - U6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC100 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 120 V IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80 V IC=4mA
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 100
50
nA
µ A
VCB
=90V
VCB
=90V,Tj=150oC
Emitter Cut-Off Current IEBO 200 nA VEB
=5V
Collector-Emitter
Saturation Voltage
VCE(sat) 150
200
mV
mV
IC=4mA, IB=400µA
IC=50mA, IB=15mA
Base-Emitter Saturation
Voltage
VBE(sat) 1.2 mV IC=4mA, IB=400µA
Static Forward Current
hFE 20
Typ.
60
80
55
IC=1mA, VCE
=-1V
IC=10mA, VCE
=1V
IC=20mA, VCE
=1V
Transition Frequency
fT60
Typ.
100 MHz VCE
=10V, IC=4mA
f=35 MHz
Output Capacitance
Cobo
Typ.
35pFV
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BSS64
C
B
E
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