BC817K / BC818K BC817K / BC818K Surface Mount Low Rth Si-Epi-Planar Transistors Si-Epi-Planar Low Rth Transistoren fur die Oberflachenmontage NPN NPN Version 2011-10-26 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 500 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC817K BC818K Collector-Base-volt. - Kollektor-Basis-Spannung C open VCBO 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V Power dissipation - Verlustleistung Tsp 115C Ptot 500 mW Collector current - Kollektorstrom (dc) IC 500 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1A Base current - Basisstrom IB 100 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS +150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 100 160 250 - - - 250 400 630 40 - - - - 0.7 V - - 1.2 V DC current gain - Kollektor-Basis-Stromverhaltnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE VCE = 1 V, IC = 500 mA all groups hFE 2 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) IC = 500 mA, IB = 50 mA VCEsat 2 Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung ) IC = 500 mA, IB = 50 mA 2 VBEsat Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC817K / BC818K Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. ICBO - - 100 nA IEBO - - 100 nA fT - 170 MHz - CCBO - 3 pF - Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 25 V, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 4 V, (C open) Transition Frequency - Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to soldering point Warmewiderstand Sperrschicht - Lotpunkt Rthsp Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ 2 < 70 K/W BC807K / BC808K BC817K-16 = 6A or 6CR BC817K-25 = 6B or 6CS BC817K-40 = 6C or 6CT http://www.diotec.com/ BC818K-16 = 6E or 6CR BC818K-25 = 6F or 6CS BC818K-40 = 6G or 6CT (c) Diotec Semiconductor AG