LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector-Emitter Voltage V CEO 25 Vdc Collector-Base Voltage V CBO 30 Vdc Emitter-Base Voltage V EBO 3.0 Vdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING MMBTH10LT1 = 3EM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V (BR)CEO 25 -- -- Vdc Collector-Base Breakdown Voltage (I C = 100 Adc , I E = 0) V (BR)CBO 30 -- -- Vdc Emitter-Base Breakdown Voltage V (BR)EBO 3.0 -- -- Vdc I CBO -- -- 100 nAdc I EBO -- -- 100 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) (I E = 10 Adc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M33-1/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit hFE 60 -- -- -- VCE(sat) -- -- 0.5 Vdc V BE -- -- 0.95 Vdc ON CHARACTERISTICS DC Current Gain (I C = 4.0 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) Base-Emitter On Voltage (I C = 4.0mAdc, V CE = 10Vdc) SMALL-SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product (V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz) Collector -Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Collector -Base Feedback Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) fT 650 -- -- MHz C cb -- -- 0.7 pF C -- -- 0.65 pF Collector Base Time Constant ( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz) rb' C C -- -- 9.0 ps rb M33-2/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25C) yib , INPUT ADMITTANCE 80 0 g ib -10 60 -20 50 jb ib (mmhos) y ib , INPUT ADMITTANCE(mmhos) 70 -b ib 40 30 1000MHz -30 700 -40 20 400 10 0 100 200 100 -50 200 300 400 500 700 -60 0 1000 10 20 30 40 50 60 f, FREQUENCY (MHz) g ib (mmhos) Figure 1. Rectangular Form Figure 2. Polar Form 70 80 70 60 b fb 60 400 200 50 50 600 100 40 700 -g fb 30 jb fb(mmhos) y ib , FORWARD TRANSFER ADMITTANCE (mmhos) y fb , FORWARD TRANSFER ADMITTANCE 20 10 0 -10 40 30 1000MHz 20 -20 -30 100 10 200 300 400 500 700 1000 70 60 50 40 30 20 10 0 f, FREQUENCY (MHz) g fb (mmhos) Figure 3. Rectangular Form Figure 4. Polar Form 10 20 30 M33-3/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 TYPICAL CHARACTERISTICS y rb , REVERSE TRANSFER ADMITTANCE 5.0 0 4.0 -1.0 200 -2.0 400 100 MPS H11 jb rb (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) COMMON-BASE y PARAMETERS versus FREQUENCY (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25C) 3.0 -b rb -b rb 2.0 MPS H1 1.0 -3.0 700 -4.0 1000MHz -g rb -5.0 0 100 200 300 400 500 700 2.0 1000 1.8 1.2 0.8 0.4 0 0.4 f, FREQUENCY (MHz) g rb (mmhos) Figure 5. Rectangular Form Figure 6. Polar Form 0.8 1.2 1.6 2.0 10 10 1000MHz 9.0 8.0 8.0 7.0 jb ob (mmhos) y ob , OUTPUT ADMITTANCE (mmhos) y ob , OUTPUT ADMITTANCE 6.0 5.0 b ob 4.0 700 6.0 4.0 400 3.0 200 2.0 2.0 g ob 1.0 100 0 0 100 200 300 400 500 700 1000 0 2.0 4.0 6.0 f , FREQUENCY (MHz) g ob (mmhos) Figure 7. Rectangular Form Figure 8. Polar Form 8.0 10 M33-4/4