LESHAN RADIO COMPANY, LTD.
M33–1/4
1
3
2
MMBTH10LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
VHF/UHF Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 25 Vdc
Collector–Base V oltage V CBO 30 Vdc
Emitter–Base V oltage V EBO 3.0 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBTH10LT1 = 3EM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO 25 — — Vdc
(I C = 1.0 mAdc, I B= 0 )
Collector–Base Breakdown V oltage V (BR)CBO 30 — — Vdc
(I C = 100 µAdc , I E = 0)
Emitter–Base Breakdown V oltage V (BR)EBO 3.0 —— Vdc
(I E = 10 µAdc , I C= 0)
Collector Cutoff Current I CBO — — 100 nAdc
( V CB = 25Vdc , I E = 0 )
Emitter Cutoff Current I EBO — — 100 nAdc
( V EB = 2.0Vdc , I C= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
M33–2/4
MMBTH10LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Mi n Typ Max Unit
ON CHARACTERISTICS
DC Current Gain hFE 60 ———
(I C = 4.0 mAdc, V CE = 10 Vdc)
Collector–Emitter Saturation V oltage VCE(sat) — — 0.5 Vdc
(I C = 4.0mAdc, I B = 0.4 mAdc)
Base–Emitter On V oltage V BE — — 0.95 Vdc
(I C = 4.0mAdc, V CE = 10Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product f T650 — — MHz
(V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz)
Collector –Base Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) C cb — — 0.7 pF
Collector –Base Feedback Capacitance
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) C rb — — 0.65 pF
Collector Base Time Constant rb’ C C— — 9.0 ps
( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz)
LESHAN RADIO COMPANY, LTD.
M33–3/4
MMBTH10LT1
b
fb
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 1. Rectangular Form g ib (mmhos)
Figure 2. Polar Form
f, FREQUENCY (MHz)
Figure 3. Rectangular Form g fb (mmhos)
Figure 4. Polar Form
y fb , FORWARD TRANSFER ADMITTANCE
COMMON–BASE y PARAMETERS versus FREQUENCY
(V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
yib , INPUT ADMITTANCE
–g
fb
g
ib
–b
ib
jb
ib
(mmhos)
jb
fb
(mmhos)
y
ib
, INPUT ADMITTANCE(mmhos)y
ib
, FORWARD TRANSFER ADMITTANCE (mmhos)
1000MHz
700
400 200 100
1000MHz
700
400
200
100 600
80
70
60
50
40
30
20
10
0
100 200 300 400 500 700 1000
0
–10
–20
–30
–40
–50
–60
0 1020304050607080
70
60
50
40
30
20
10
0
–10
–20
–30
100 200 300 400 500 700 1000
60
50
40
30
20
10
70 60 50 40 30 20 10 0 10 20 30
LESHAN RADIO COMPANY, LTD.
M33–4/4
MMBTH10LT1
b
ob
TYPICAL CHARACTERISTICS
COMMON–BASE y P ARAMETERS versus FREQUENCY
(V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25°C)
y rb , REVERSE TRANSFER ADMITTANCE
f, FREQUENCY (MHz)
Figure 5. Rectangular Form g rb (mmhos)
Figure 6. Polar Form
y ob , OUTPUT ADMITTANCE
g ob (mmhos)
Figure 8. Polar Form
f , FREQUENCY (MHz)
Figure 7. Rectangular Form
jb rb (mmhos)
g
ob
–b
rb
–b
rb
–g
rb
MPS H1
MPS H11
100
200
400
700
1000MHz
100
200
400
700
1000MHz
jb ob (mmhos)
y ob , OUTPUT ADMITTANCE (mmhos) y rb , REVERSE TRANSFER ADMITTANCE (mmhos)
5.0
4.0
3.0
2.0
1.0
0
100 200 300 400 500 700 1000
0
–1.0
–2.0
–3.0
–4.0
–5.0 2.0 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0100 200 300 400 500 700 1000
10
8.0
6.0
4.0
2.0
00 2.0 4.0 6.0 8.0 10
