CMA30E1600PN - LITTELFUSE - Datasheet.World

CMA30E1600PN

2 1

3

Single Thyristor

Thyristor

Part number

CMA30E1600PN

Backside: Isolated

TAV

T

V V1.42

RRM

23

1600

=

V=V

I=A

Features / Advantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-220FP

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Soldering pins for PCB mounting

● Base plate: Plastic overmolded tab

● Reduced weight

● Isolation Voltage: V~

2500

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at

Disclaimer Notice

www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified

CMA30E1600PN

V = V

A²s

Symbol

Definition

Ratings

typ.

max.

I

V

IA

V

T

1.42

R2.5 K/W

min.

23

VV

10T = 25°C

VJ

T = °C

VJ

mA2V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

40

P

tot

50 WT = 25°C

C

30

1600

forward voltage drop

total power dissipation

Conditions

Unit

1.80

T = 25°C

VJ

125

V

T0

V0.90T = °C

VJ

150

r

T

17 mΩ

V1.42T = °C

VJ

I = A

T

V

30

1.92

I = A60

threshold voltage

slope resistance for power loss calculation only

µA

125

VV1600T = 25°C

VJ

IA36

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

150

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

9

junction capacitance

V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

150

I²t T = 45°C

value for fusing

T = °C150

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

150

260

280

240

A

220

240

340

325

1600

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

150repetitive, I =T

VJ

= 125 °C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage

V = 6 V T = °C25

(dv/dt) T = 125°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

I A; V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

90 A

T

P

G

= 0.2

di /dt A/µs;

G

=0.2

DRM

cr

V = ⅔ V

DRM

GK

500

1.3 V

T = °C-40

VJ

I

GT

gate trigger current

V = 6 V T = °C25

DVJ

28 mA

T = °C-40

VJ

1.6 V

50 mA

V

GD

gate non-trigger voltage

T = °C

VJ

0.2 V

I

GD

gate non-trigger current

1 mA

V = ⅔ V

D DRM

125

latching current

T = °C

VJ

90 mA

I

L

25t µs

p

= 10

I A;

G

= 0.2 di /dt A/µs

G

= 0.2

holding current

T = °C

VJ

80 mA

I

H

25V = 6 V

D

R = ∞

GK

gate controlled delay time

T = °C

VJ

2 µs

t

gd

25

I A;

G

= 0.5 di /dt A/µs

G

= 0.5

V = ½ V

D DRM

turn-off time

T = °C

VJ

150 µs

t

q

di/dt = A/µs10 dv/dt = V/µs20

V =

R

100 V; I A;

T

= 30 V = ⅔ V

DRM

tµs

p

= 200

non-repet., I = 30 A

T

125

R

thCH

thermal resistance case to heatsink

K/W

Thyristor

1700

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

R/D

reverse current, drain current

T

R/D

200

0.5

IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified

CMA30E1600PN

Ratings

Logo

Part Number

DateCode

Lot#

Product Marking

Location

123456

yywwZ

XXXXXX

C

M

A

30

E

1600

PN

Part description

Thyristor (SCR)

Thyristor

(up to 1800V)

Single Thyristor

TO-220ABFP (3)

=

CMA30E1600PZ TO-263AB (D2Pak) (2HV) 1600

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm0.6

mounting torque

0.4

T

VJ

°C150

virtual junction temperature

-40

Weight g2

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

F

C

N60

mounting force with clip

20

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

1.6 1.0

2.5 2.5

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

35 A

per terminal

125-40

terminal to terminal

CS22-12io1M

CLA30E1200PB

TO-220ABFP (3)

TO-220AB (3)

1200

CLA30E1200PC

CLA30E1200HB

CS22-08io1M

TO-263AB (D2Pak) (2)

TO-247AD (3)

TO-220ABFP (3)

1200

800

TO-220FP

Similar Part Package Voltage class

CMA30E1600PB TO-220AB (3) 1600

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

CMA30E1600PN 505254Tube 50CMA30E1600PNStandard

2500

ISOL

T

stg

°C150

storage temperature

-40

2100

threshold voltage

V0.9

mΩ

V

0 max

R

0 max

slope resistance *

14

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Thyristor

°C

* on die level

150

IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified

CMA30E1600PN

Ø P A

A1

H

A2

Q

L1

D

E

L

b

b1 c

e

1 2 3

min max min max

A4.50 4.90 0.177 0.193

A1 2.34 2.74 0.092 0.108

A2 2.56 2.96 0.101 0.117

b0.70 0.90 0.028 0.035

c0.45 0.60 0.018 0.024

D15.67 16.07 0.617 0.633

E9.96 10.36 0.392 0.408

e

H6.48 6.88 0.255 0.271

L12.68 13.28 0.499 0.523

L1 3.03 3.43 0.119 0.135

Ø P 3.08 3.28 0.121 0.129

Q3.20 3.40 0.126 0.134

Dim.

Millimeters Inches

2

.

54

BSC

0

.

100

BSC

2 1

3

Outlines TO-220FP

IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified

CMA30E1600PN

0 40 80 120 160

0

10

20

30

40

0,01 0,1 1

100

150

200

2

5

0

0,5 1,0 1,5 2,0

0

10

20

30

40

50

60

1 10 100 1000 10000

0,0

0,5

1,0

1,5

2,0

2,5

I

T

[A]

t [s]

V

T

[V]

2 3 4 5 6 7 8 9 011

10

100

1

0

00

I

2

t

[A

2

s]

t [ms]

I

TSM

[A]

T

VJ

= 25°C

T

VJ

= 125°C

T

VJ

= 45°C

50 Hz, 80% V

RRM

T

VJ

= 125°C

T

VJ

= 45°C

V

R

= 0 V

I

T(AV)M

[A]

T

case

[°C]

Z

thJC

[K/W]

t [ms]

Fig. 1 Forward characteristics Fig. 2 Surge overload current

I

TSM

: crest value, t: duration

Fig. 3 I

2

t versus time (1-10 s)

Fig. 4 Gate voltage & gate current

Triggering: A = no; B = possible; C = safe

Fig. 6 Max. forward current at

case temperature

Fig. 7 Transient thermal impedance junction to case

Fig. 5 Gate controlled delay time t

gd

0 10 20 30

0

10

20

30

40

I

T(AV)

[A]

P

(AV)

[W]

Fig. 7a Power dissipation versus direct output current

Fig. 7b and ambient temperature

0 50 100 150

T

amb

[°C]

R

thHA

0.6

0.8

1.0

2.0

4.0

8.0

dc =

1

0.5

0.4

0.33

0.17

0.08

dc =

1

0.5

0.4

0.33

0.17

0.08

T

VJ

=

125°C

150°C

0 25 50 75

0

1

2

3

4

V

G

[V]

I

G

[mA]

I

GD

: T

VJ

= 125°C

I

GD

: T

VJ

= 25°C

I

GD

: T

VJ

= 25°C

I

GD

: T

VJ

= 0°C

I

GD

: T

VJ

= -40°C

A

B

C

10

-2

10

-1

10

0

10

1

10

-1

10

0

10

1

10

2

t

gd

[µs]

I

G

[A]

lim.

typ.

T

VJ

= 125°C

i R

thi

(K/W) t

i

(s)

1 0.1 0.01

2 0.06 0.0001

3 0.2 0.02

4 0.35 0.4

5 1.79 0.15

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified

CMA30E1600PN

IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified