BC307B, BC307C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -- Continuous IC -100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD Total Device Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C 1.0 8.0 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 357 C/W Thermal Resistance, Junction to Case RJC 125 C/W Operating and Storage Junction Temperature Range COLLECTOR 1 2 BASE 3 EMITTER THERMAL CHARACTERISTICS Characteristic 1 2 3 CASE 29 TO-92 STYLE 17 ORDERING INFORMATION Device Semiconductor Components Industries, LLC, 2001 November, 2001 - Rev. 2 1 Package Shipping BC307B TO-92 5000 Units/Box BC307BRL1 TO-92 2000/Tape & Reel BC307BZL1 TO-92 2000/Ammo Pack BC307C TO-92 5000 Units/Box Publication Order Number: BC307/D BC307B, BC307C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max -45 -- -- -5.0 -- -- -- -- -0.2 -0.2 -15 -4.0 BC307B BC307C -- -- 150 270 -- -- (IC = -2.0 mAdc, VCE = -5.0 Vdc) BC307 BC307B BC307C 120 200 420 -- 290 500 800 460 800 (IC = -100 mAdc, VCE = -5.0 Vdc) BC307B BC307C -- -- 180 300 -- -- -- -- -- -0.10 -0.30 -0.25 -0.3 -0.6 -- -- -- -0.7 -1.0 -- -- -0.55 -0.62 -0.7 -- 280 -- -- -- 6.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) V(BR)EBO Collector-Emitter Leakage Current (VCES = -50 V, VBE = 0) (VCES = -50 V, VBE = 0) TA = 125C Vdc Vdc ICES nAdc A ON CHARACTERISTICS DC Current Gain (IC = -10 Adc, VCE = -5.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = see Note 1) (IC = -100 mAdc, IB = -5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -100 mAdc, IB = -5.0 mAdc) VBE(sat) Base-Emitter On Voltage (IC = -2.0 mAdc, VCE = -5.0 Vdc) VBE(on) -- Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) fT Common Base Capacitance (VCB = -10 Vdc, IC = 0, f = 1.0 MHz) Ccbo Noise Figure (IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) MHz NF dB -- 2.0 1. IC = -10 mAdc on the constant base current characteristic, which yields the point I C = -11 mAdc, VCE = -1.0 V. http://onsemi.com 2 pF 10 BC307B, BC307C TYPICAL CHARACTERISTICS -1.0 VCE = -10 V TA = 25C 1.5 -0.9 1.0 0.7 0.5 -0.7 -0.5 -0.4 -0.3 VCE(sat) @ IC/IB = 10 -0.1 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mAdc) -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) 10 400 300 Cib 7.0 200 VCE = -10 V TA = 25C 150 100 80 -50 -100 Figure 2. "Saturation" and "On" Voltages C, CAPACITANCE (pF) BANDWIDTH PRODUCT (MHz) VBE(on) @ VCE = -10 V -0.6 Figure 1. Normalized DC Current Gain f T, CURRENT-GAIN VBE(sat) @ IC/IB = 10 -0.2 0.3 0.2 -0.2 60 40 5.0 TA = 25C 3.0 Cob 2.0 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 IC, COLLECTOR CURRENT (mAdc) 1.0 -0.4 -0.6 -50 Figure 3. Current-Gain -- Bandwidth Product 0.3 r b, BASE SPREADING RESISTANCE (OHMS) 0.5 VCE = -10 V f = 1.0 kHz TA = 25C 0.1 0.05 0.03 0.01 -0.1 -0.2 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mAdc) -5.0 -1.0 -2.0 -4.0 -6.0 -10 VR, REVERSE VOLTAGE (VOLTS) -20 -30 -40 Figure 4. Capacitances 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 -10 150 140 130 VCE = -10 V f = 1.0 kHz TA = 25C 120 110 100 -0.1 Figure 5. Output Admittance -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 IC, COLLECTOR CURRENT (mAdc) -5.0 Figure 6. Base Spreading Resistance http://onsemi.com 3 -10 BC307B, BC307C PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A B R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 BC307/D