BC307BZL1 - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

November, 2001 – Rev. 2 1Publication Order Number:

BC307/D

BC307B, BC307C

Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector-Emitter Voltage VCEO –45 Vdc

Collector-Base Voltage VCBO –50 Vdc

Emitter-Base Voltage VEBO –5.0 Vdc

Collector Current — Continuous IC–100 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD350

2.8 mW

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.0

8.0 Watts

mW/°C

Operating and Storage Junction

Temperature Range TJ, Tstg –55 to

+150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction to Ambient RθJA 357 °C/W

Thermal Resistance,

Junction to Case RθJC 125 °C/W

Device Package Shipping

ORDERING INFORMATION

BC307B TO–92

http://onsemi.com

CASE 29

TO–92

STYLE 17

5000 Units/Box

BC307BRL1 TO–92 2000/Tape & Reel

COLLECTOR

BASE

EMITTER

BC307BZL1 TO–92 2000/Ammo Pack

BC307C TO–92 5000 Units/Box

BC307B, BC307C

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –2.0 mAdc, IB = 0) V(BR)CEO –45 — — Vdc

Emitter–Base Breakdown Voltage

(IE = –100 Adc, IC = 0) V(BR)EBO –5.0 — — Vdc

Collector–Emitter Leakage Current

(VCES = –50 V, VBE = 0)

(VCES = –50 V, VBE = 0) TA = 125°C

ICES —

—–0.2

–0.2 –15

–4.0 nAdc

µA

ON CHARACTERISTICS

DC Current Gain

(IC = –10 µAdc, VCE = –5.0 Vdc) BC307B

BC307C

(IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307

BC307B

BC307C

(IC = –100 mAdc, VCE = –5.0 Vdc) BC307B

BC307C

hFE —

—

120

200

420

—

150

270

—

290

500

180

300

—

800

460

800

—

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

(IC = –10 mAdc, IB = see Note 1)

(IC = –100 mAdc, IB = –5.0 mAdc)

VCE(sat) —

—

–0.10

–0.30

–0.25

–0.3

–0.6

—

Vdc

Base–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

(IC = –100 mAdc, IB = –5.0 mAdc)

VBE(sat) —

—–0.7

–1.0 —

—

Vdc

Base–Emitter On Voltage

(IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) –0.55 –0.62 –0.7 Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT— 280 — MHz

Common Base Capacitance

(VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Ccbo — — 6.0 pF

Noise Figure

(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ,

f = 1.0 kHz)

— 2.0 10

1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V.

BC307B, BC307C

http://onsemi.com

TYPICAL CHARACTERISTICS

2.0

1.5

1.0

0.2

0.3

0.5

0.7

-200-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

hFE, NORMALIZED DC CURRENT GAIN

VCE = -10 V

TA = 25°C

-1.0

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

IC, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

V, VOLTAGE (VOLTS)

TA = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE(sat) @ IC/IB = 10

400

100

200

300

IC, COLLECTOR CURRENT (mAdc)

Figure 3. Current–Gain — Bandwidth Product

fT, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

C, CAPACITANCE (pF)

1.0

2.0

3.0

5.0

7.0

-0.4

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitances

TA = 25°C

Cib

Cob

rb, BASE SPREADING RESISTANCE (OHMS)

150

140

130

120

110

100

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Output Admittance

-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

VCE = -10 V

TA = 25°C

-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

1.0

IC, COLLECTOR CURRENT (mAdc)

Figure 6. Base Spreading Resistance

VCE = -10 V

f = 1.0 kHz

TA = 25°C

′

-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10

VCE = -10 V

f = 1.0 kHz

TA = 25°C

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10

0.01

0.03

0.05

0.1

0.3

0.5

h , OUTPUT ADMITTANCE (OHMS)

150

BC307B, BC307C

http://onsemi.com

PACKAGE DIMENSIONS

TO–92

(TO–226)

CASE 29–11

ISSUE AL NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X–X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

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For additional information, please contact your local

Sales Representative.

BC307/D

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