Advance Technical Information IXFN32N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr = = 1000V 28A 320m 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 28 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA TC = 25C 32 A EAS TC = 25C 3 J dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 780 W -55 ... +150 150 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. Applications BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V 200 nA IDSS VDS = VDSS, VGS = 0V 50 A 2 mA RDS(on) VGS = 10V, ID = 16A, Note 1 TJ = 125C (c) 2011 IXYS CORPORATION, All Rights Reserved V 6.5 High Power Density Easy to Mount Space Savings V z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 320 m DS100367(07/11) IXFN32N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 16A, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 32 S 9940 pF 766 pF 64 pF 0.15 45 ns 15 ns 54 ns 12 ns 195 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 16A RG = 1 (External) Qg(on) Qgs SOT-227B (IXFN) Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 16A Qgd 60 nC 78 nC (M4 screws (4x) supplied) 0.16 C/W RthJC RthCS 0.05 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 16A, -di/dt = 100A/s 1.2 12.3 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN32N100Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 32 70 VGS = 10V VGS = 10V 28 60 8V 24 ID - Amperes ID - Amperes 50 20 16 7V 12 8V 40 30 20 8 7V 10 4 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 32 3.0 VGS = 10V VGS = 10V 28 2.6 R DS(on) - Normalized 7V 24 ID - Amperes 20 VDS - Volts VDS - Volts 20 16 12 6V 2.2 I D = 32A I D = 16A 1.8 1.4 1.0 8 0.6 4 5V 0 0.2 0 5 10 15 20 25 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 30 2.8 VGS = 10V 2.6 27 TJ = 125C 2.4 24 21 2.2 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 2.0 1.8 1.6 18 15 12 9 1.4 6 1.2 TJ = 25C 1.0 3 0.8 0 0 10 20 30 40 ID - Amperes (c) 2011 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN32N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 70 45 TJ = - 40C 60 40 50 30 g f s - Siemens ID - Amperes 35 TJ = 125C 25C 25 - 40C 20 15 25C 40 125C 30 20 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 140 160 180 200 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 VDS = 500V 80 8 I G = 10mA 70 7 VGS - Volts IS - Amperes I D = 16A 60 50 40 6 5 4 TJ = 125C 30 3 TJ = 25C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 VSD - Volts 80 100 120 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 100,000 RDS(on) Limit f = 1 MHz 10,000 10 ID - Amperes Capacitance - PicoFarads 100s Ciss Coss 1,000 1 100 TJ = 150C TC = 25C Single Pulse Crss 10 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFN32N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - C / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8) 7-20-11-A