Max Ratings (600V, 50A) Features The RHRG5060-F085 is an HyperfastTM diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. * High Speed Switching ( trr=45ns(Typ.) @ IF=50A ) * Low Forward Voltage( VF=1.67V(Typ.) @ IF=50A ) * Avalanche Energy Rated * AEC-Q101 Qualified Applications * Switching Power Supply * Power Switching Circuits * General Purpose * Automotive and General Purpose Pin Assignments 1 1. Cathode TO-247-2L 1. Cathode 2. Anode Absolute Maximum Ratings Symbol 2 2. Anode TC = 25C unless otherwise noted Ratings Units VRRM Peak Repetitive Reverse Voltage Parameter 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current (Halfwave 1 Phase 50Hz) EAVL Avalanche Energy (1.4A, 40mH) TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T C @ TC = 25C 50 A 150 A 40 mJ - 55 to +175 C Max Units = 25C unless otherwise noted Symbol Parameter RJC Maximum Thermal Resistance, Junction to Case RJA Maximum Thermal Resistance, Junction to Ambient 0.42 C/W 45 C/W Package Marking and Ordering Information Device Marking Device Package Tube Quantity RHRG5060 RHRG5060-F085 TO-247 - 30 (c)2014 Semiconductor Components Industries, LLC. September-2017, Rev. 3 1 Publication Order Number: RHRG5060-F085/D RHRG5060-F085 50A, 600V Hyperfast Rectifier RHRG5060-F085 50A, 600V Hyperfast Rectifier C Symbol IR = 25C unless otherwise noted Parameter Conditions Instantaneous Reverse Current VR = 600V Min. Typ. Max Units TC = 25 C - - 250 uA TC = 175 C - - 1.5 mA VFM1 Instantaneous Forward Voltage IF = 50A TC = 25 C TC = 175 C - 1.67 1.29 2.1 1.7 V V trr2 Reverse Recovery Time IF =1A, di/dt = 100A/s, VCC= 390V TC = 25 C - 37 45 ns IF =50A, di/dt = 100A/s, VCC= 390V TC = 25 C TC = 175 C - 45 200 60 - ns ns IF =50A, di/dt = 100A/s, VCC= 390V TC = 25 C - 25 20 45 - ns ns nC ta tb Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse : Test Pulse width = 300s, Duty Cycle = 2% 2. Guaranteed by design Test Circuit and Waveforms www.onsemi.com 2 RHRG5060-F085 50A, 600V Hyperfast Rectifier Electrical Characteristics T Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 1000 250 TC = 175oC 10 T C = 125oC 1 o T C = 25 C 0.1 0.1 0.5 1.0 1.5 2.0 Forward Voltage, V F [V] 1 0.1 0.01 1E-4 100 2.5 o TC = 25 C 200 300 400 500 Reverse Voltage, VR [V] 600 Figure 4. Typical Reverse Recovery Time vs. di/dt 200 500 IF = 50A Reverse Recovery Time, trr [ns] Typical Capacitance at 10V = 154pF Capacitances , Cj [pF] o TC = 125 C 10 1E-3 Figure 3.Typical Junction Capacitance 400 300 200 100 0 0.1 1 10 Reverse Voltage, V R [V] o 150 TC = 175 C o TC = 125 C 100 TC = 25oC 50 0 100 100 200 300 di/dt [A/s] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 200 30 IF = 50A 25 Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] TC = 175oC 100 Reverse Current , IR [A] Forward Current, IF [A] 100 TC = 175o C 20 o T C = 125 C 15 10 5 o TC = 25 C 0 100 200 300 di/dt [A/s] 400 500 150 100 50 0 25 www.onsemi.com 3 50 75 100 125 150 o Case temperature, TC [ C] 175 RHRG5060-F085 50A, 600V Hyperfast Rectifier Typical Performance Characteristics RHRG5060-F085 50A, 600V Hyperfast Rectifier Typical Performance Characteristics (Continued) Figure 7. Reverse Recovery Charge Reverse Recovery Charge, Q rr [nC] 1800 o I F = 50A TC = 175 C 1200 TC = 125oC 600 T C = 25oC 0 100 200 300 di/dt [A/s] 400 500 Figure 8. Transient Thermal Response Curve Z (t), Thermal Response thJC 1 D=0.5 PDM t1 0.1 0.1 * Notes : o 1. Z (t) = 0.42 C/W Typ. thJC 0.05 0.02 2. Duty Factor, D=t /t 1 2 0.01 -T =P *Z (t) 3. T JM C DM thJC single pulse 0.01 -5 10 t2 0.2 10 -4 -3 10 -2 10 -1 10 t , Square Wave Pulse Duration [sec] 1 www.onsemi.com 4 0 10 10 1 2 10 RHRG5060-F085 50A, 600V Hyperfast Rectifier Mechanical Dimensions TO-247-2L Dimensions in Millimeters www.onsemi.com 5 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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