Product Folder Sample & Buy Support & Community Tools & Software Technical Documents LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability 1 Features 3 Description * * The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermallyenhanced WSON-10 packages. 1 * * * * * * * * * * * * Independently Drives Two N-Channel MOSFETs Compound CMOS and Bipolar Outputs Reduce Output Current Variation 5A sink/3A Source Current Capability Two Channels can be Connected in Parallel to Double the Drive Current Independent Inputs (TTL Compatible) Fast Propagation Times (25-ns Typical) Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load) Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground Available in Dual Noninverting, Dual Inverting and Combination Configurations Shutdown Input Provides Low Power Mode Supply Rail Undervoltage Lockout Protection Pin-Out Compatible With Industry Standard Gate Drivers Packages: - SOIC-8 - WSON-10 (4 mm x 4 mm) Device Information(1) PART NUMBER LM5110 BODY SIZE (NOM) 4.90 mm x 3.91 mm WSON (10) 4.00 mm x 4.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 2 Applications * * * PACKAGE SOIC (8) Simplified Application Diagram Synchronous Rectifier Gate Drivers Switch-Mode Power Supply Gate Driver Solenoid and Motor Drivers LM5110 1 IN_REF SHDN 8 2 IN_A 3 VEE VCC 6 4 IN_B OUT_B 5 RG INA OUT_A 7 RG INB 1.0 F 0.1 F 0.1 F + + VNEG VPOS Copyright (c) 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Options....................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 4 4 4 4 5 5 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Switching Characteristics .......................................... Typical Characteristics .............................................. Detailed Description .............................................. 9 8.1 Overview ................................................................... 9 8.2 Functional Block Diagram ......................................... 9 8.3 Feature Description................................................. 10 8.4 Device Functional Modes........................................ 11 9 Applications and Implementation ...................... 12 9.1 Application Information............................................ 12 9.2 Typical Application .................................................. 13 10 Power Supply Recommendations ..................... 15 11 Layout................................................................... 15 11.1 Layout Guidelines ................................................. 15 11.2 Layout Example .................................................... 16 11.3 Thermal Considerations ........................................ 16 12 Device and Documentation Support ................. 19 12.1 12.2 12.3 12.4 12.5 Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 19 19 19 19 19 13 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (November 2012) to Revision B Page * Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ................................................................................................. 1 * Added Thermal Information table. ......................................................................................................................................... 4 2 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 5 Device Options Table 1. Configuration Table PART NUMBER "A" OUTPUT CONFIGURATION "B" OUTPUT CONFIGURATION PACKAGE LM5110-1M Noninverting Noninverting SOIC- 8 LM5110-2M Inverting Inverting SOIC- 8 LM5110-3M Inverting Noninverting SOIC- 8 LM5110-1SD Noninverting Noninverting WSON-10 LM5110-2SD Inverting Inverting WSON-10 LM5110-3SD Inverting Noninverting WSON-10 6 Pin Configuration and Functions D Package 8-Pin SOIC Top View IN_REF DPR Package 10-Pin WSON Top Pin 1 8 SHDN IN_REF IN_A 2 7 3 6 IN_A OUT A VEE VEE VCC IN_B IN_B 4 5 NC OUT_B 1 10 2 9 3 8 4 7 5 6 SHDN OUT A VCC OUT_B NC Pin Functions PIN SOIC (1) (2) WSON (2) NAME I/O (1) DESCRIPTION APPLICATION INFORMATION Connect to VEE for standard positive only output voltage swing. Connect to system logic ground reference for positive and negative output voltage swing. 1 1 IN_REF G Ground reference for control inputs 2 2 IN_A I `A' side control input TTL compatible thresholds. 3 3 VEE G Power ground of the driver outputs Connect to either power ground or a negative gate drive supply. 4 4 IN_B I `B' side control input TTL compatible thresholds. 5 7 OUT_B O Output for the `B' side driver. Capable of sourcing 3A and sinking 5A. Voltage swing of this output is from VCC to VEE. 6 8 VCC P Positive supply Locally decouple to VEE and IN_REF. 7 9 OUT_A. O Output for the `A' side driver. Capable of sourcing 3A and sinking 5A. Voltage swing of this output is from VCC to VEE . 8 10 nSHDN I Shutdown input pin Pull below 1.5V to activate low power shutdown mode. P = Power, G = Ground, I = Input, O = Output, I/O = Input/Output. Pins 5 and 6 are No Connect for WSON-10 packages. Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 3 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT VCC to VEE -0.3 15 V VCC to IN_REF -0.3 15 V IN to IN_REF, nSHDN to IN_REF -0.3 15 V IN_REF to VEE -0.3 5 V Maximum junction temperature, (TJ(max)) 150 C Operating junction temperature 125 C 150 C Storage temperature, (Tstg) (1) (2) -55 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. 7.2 ESD Ratings V(ESD) (1) Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) Electrostatic discharge VALUE UNIT 2000 V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX VCC to VEE 3.5 - 14 V VCC to IN_REF 3.5 - 14 V IN_REF to VEE Junction Temperature UNIT 0 4 V -40 126 C 7.4 Thermal Information LM5110 THERMAL METRIC (1) D (SOIC) DPR (WSON) 8 PINS 10 PINS UNIT RJA Junction-to-ambient thermal resistance 114 40.1 C/W RJC(top) Junction-to-case (top) thermal resistance 56.6 40.4 C/W RJB Junction-to-board thermal resistance 55.2 17.3 C/W JT Junction-to-top characterization parameter 10.3 0.5 C/W JB Junction-to-board characterization parameter 54.6 17.5 C/W RJC(bot) Junction-to-case (bottom) thermal resistance - 6.3 C/W (1) 4 For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 7.5 Electrical Characteristics TJ = -40C to +125C, VCC = 12V, VEE = IN_REF = 0V, nSHDN = VCC, No Load on OUT_A or OUT_B, unless otherwise specified. PARAMETER VCC Operating Range TEST CONDITIONS VCC-IN_REF and VCC-VEE VCCR VCC Under Voltage Lockout (rising) VCC-IN_REF VCCH VCC Under Voltage Lockout Hysteresis ICC VCC Supply Current (ICC) ICCSD VCC Shutdown Current (ICC) MIN TYP 3.5 2.3 2.9 MAX UNIT 14 V 3.5 V 230 mV IN_A = IN_B = 0 V (5110-1) 1 2 IN_A = IN_B = VCC (5110-2) 1 2 IN_A = VCC, IN_B = 0 V (5110-3) 1 2 18 25 nSHDN = 0 V mA A CONTROL INPUTS VIH Logic High VIL Logic Low HYS Input Hysteresis IIL Input Current Low IIH Input Current High 2.2 V 0.8 V 400 IN_A=IN_B=VCC (5110-1-2-3) -1 mV 0.1 1 IN_A=IN_B=VCC (5110-1) 10 18 25 IN_A=IN_B=VCC (5110-2) -1 0.1 1 IN_A=VCC (5110-3) -1 0.1 1 IN_B=VCC (5110-3) 10 18 25 -18 -25 1.5 2.2 A SHUTDOWN INPUT ISD Pullup Current nSHDN = 0 V VSDR Shutdown Threshold nSHDN rising VSDH Shutdown Hysteresis 0.8 A V 165 mV OUTPUT DRIVERS (1) ROH Output Resistance High IOUT = -10 mA ROL Output Resistance Low IOUT = + 10 mA ISource Peak Source Current OUTA/OUTB = VCC/2, 200 ns Pulsed Current 3 A ISink Peak Sink Current OUTA/OUTB = VCC/2, 200 ns Pulsed Current 5 A (1) 30 50 1.4 2.5 LATCHUP PROTECTION AEC - Q100, Method 004 (1) TJ = 150C 500 mA The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices. 7.6 Switching Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TYP MAX CLOAD = 2 nF, see Figure 2 25 40 ns Propagation Delay Time High to Low, IN falling (IN to OUT) CLOAD = 2 nF, see Figure 2 25 40 ns tr Rise Time CLOAD = 2 nF, see Figure 2 14 25 ns tf Fall Time CLOAD = 2 nF, see Figure 2 12 25 ns td1 Propagation Delay Time Low to High, IN rising (IN to OUT) td2 TEST CONDITIONS MIN UNIT Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 5 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com 50% 50% INPUT OUTPUT tD2 tD1 90% 10% tr tf (a) Figure 1. Inverting 50% 50% INPUT tD1 tD2 90% OUTPUT 10% tr tf (b) Figure 2. Noninverting 6 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 7.7 Typical Characteristics 100 1000 10 TA = 25C VCC = 12V SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) VCC = 15V VCC = 10V VCC = 5V 1 10 f = 100kHz 1 TA = 25C CL = 2200pF f = 10kHz 0.1 100 0.1 1 10 f = 500kHz 100 100 1000 10k 1k CAPACITIVE LOAD (pF) FREQUENCY (kHz) Figure 3. Supply Current vs Frequency Figure 4. Supply Current vs Load 20 20 TA = 25C CL = 2200pF VCC = 12V CL = 2200pF 18 18 TIME (ns) TIME (ns) tr 16 tr 14 16 14 tf tf 12 12 10 10 4 5 6 7 8 9 10 11 12 13 14 15 16 -75 -50 -25 0 25 50 75 100 125 150 175 SUPPLY VOLTAGE (V) TEMPERATURE (C) Figure 5. Rise and Fall Time vs Supply Voltage Figure 6. Rise and Fall Time vs Temperature 32.5 50 TA = 25C VCC = 12V TIME (ns) TIME (ns) 40 30 tr 20 tf 27.5 tD2 25 22.5 tD1 10 0 100 TA = 25C CL = 2200pF 30 20 17.5 1k CAPACITIVE LOAD (pF) 10k 4 6 8 10 12 14 16 SUPPLY VOLTAGE (V) Figure 7. Rise and Fall Time vs Capacitive Load Figure 8. Delay Time vs Supply Voltage Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 7 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com Typical Characteristics (continued) 32.5 30 3.25 VCC = 12V CL = 2200pF TA = 25C IOUT = 10mA 2.75 65 55 tD2 ROL (:) TIME (ns) 25 tD1 45 2.25 1.75 35 ROL ROH (:) ROH 27.5 22.5 1.25 25 20 15 0.75 3 0 17.5 -75 -50 -25 0 25 50 75 100125150175 6 9 12 15 18 SUPPLY VOLTAGE (V) TEMPERATURE (C) Figure 10. RDSON vs Supply Voltage Figure 9. Delay Time vs Temperature 0.450 VCCR 2.800 2.500 VCCF 0.330 2.200 1.900 0.390 0.270 VCCH HYSTERESIS (V) UVLO THRESHOLDS (V) 3.100 0.210 1.600 0.150 -75 -50 -25 0 25 50 75 100 125 150 175 TEMPERATURE (C) Figure 11. UVLO Thresholds and Hysteresis vs Temperature 8 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 8 Detailed Description 8.1 Overview LM5110 dual gate driver consists of two independent and identical driver channels with TTL compatible logic inputs and high current totem-pole outputs that source or sink current to drive MOSFET gates. The driver output consist of a compound structure with MOS and bipolar transistor operating in parallel to optimize current capability over a wide output voltage and operating temperature range. The bipolar device provides high peak current at the critical threshold region of the MOSFET VGS while the MOS devices provide rail-to-rail output swing. The totem pole output drives the MOSFET gate between the gate drive supply voltage VCC and the power ground potential at the VEE pin. The LM5110 is available in dual noninverting (-1), dual inverting (-2) and the combination inverting plus noninverting (-3) configurations. All three configurations are offered in the SOIC-8 and WSON-10 plastic packages. 8.2 Functional Block Diagram VCC 18A UVLO IN_REF SHDN OUT_A IN_A LEVEL SHIFT VEE VCC IN_B OUT_B LEVEL SHIFT IN_REF VEE Copyright (c) 2016, Texas Instruments Incorporated Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 9 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com 8.3 Feature Description 8.3.1 Input Stage and Level Shifter The control inputs of the drivers are high impedance CMOS buffers with TTL compatible threshold voltages. The negative supply of the input buffer is connected to the input ground pin IN_REF. An internal level shifting circuit connects the logic input buffers to the totem pole output drivers. The level shift circuit and separate input/output ground pins provide the option of single supply or split supply configurations. When driving MOSFET gates from a single positive supply, the IN_REF and VEE pins are both connected to the power ground. The LM5110 pinout was designed for compatibility with industry standard gate drivers in single supply gate driver applications. Pin 1 (IN_REF) on the LM5110 is a no-connect on standard driver IC's. Connecting pin 1 to pin 3 (VEE) on the printedcircuit board accommodates the pin-out of both the LM5110 and competitive drivers. The input stage of each driver should be driven by a signal with a short rise and fall time. Slow rising and falling input signals, although not harmful to the driver, may result in the output switching repeatedly at a high frequency. The input pins of noninverting drivers have an internal 18-A current source pull-down to IN-REF. The input pins of inverting driver channels have neither pullup nor pulldown current sources. Unused input should be tied to IN_REF or VCC and not left open. 8.3.2 Output Stage The two driver channels of the LM5110 are designed as identical cells. Transistor matching inherent to integrated circuit manufacturing ensures that the AC and DC performance of the channels are nearly identical. Closely matched propagation delays allow the dual driver to be operated as a single driver if inputs and output pins are connected. The drive current capability in parallel operation is 2X the drive of either channel. Small differences in switching speed between the driver channels will produce a transient current (shoot-through) in the output stage when two output pins are connected to drive a single load. Differences in input thresholds between the driver channels will also produce a transient current (shoot-through) in the output stage. Fast transition input signals are especially important while operating in a parallel configuration. The efficiency loss for parallel operation has been characterized at various loads, supply voltages and operating frequencies. The power dissipation in the LM5110 increases by less than 1% relative to the dual driver configuration when operated as a single driver with inputs and outputs connected. 8.3.3 Turn-off with Negative Bias The isolated input/output grounds provide the capability to drive the MOSFET to a negative VGS voltage for a more robust and reliable off state. In split supply configuration, the IN_REF pin is connected to the ground of the controller which drives the LM5110 inputs. The VEE pin is connected to a negative bias supply that can range from the IN-REF as much as 14-V below the VCC gate drive supply. Enhancement mode MOSFETs do not inherently require a negative bias on the gate to turn off the FET. However, certain applications may benefit from the capability of negative VGS voltage during turnoff including: 1. When the gate voltages cannot be held safely below the threshold voltage due to transients or coupling in the printed-circuit-board. 2. When driving low threshold MOSFETs at high junction temperatures. 3. When high switching speeds produce capacitive gate-drain current that lifts the internal gate potential of the MOSFET. 8.3.4 UVLO and Power Supplies An undervoltage lockout (UVLO) circuit is included in the LM5110, which senses the voltage difference between VCC and the input ground pin, IN_REF. When the VCC to IN_REF voltage difference falls below 2.7 V, both driver channels are disabled. The driver will resume normal operation when the VCC to IN_REF differential voltage exceeds approximately 2.9 V. UVLO hysteresis prevents chattering during brown-out conditions. The maximum recommended voltage difference between VCC and IN_REF or between VCC and VEE is 14 V. The minimum voltage difference between VCC and IN_REF is 3.5 V. 10 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 Feature Description (continued) 8.3.5 Shutdown SHDN The Shutdown pin (SHDN) is a TTL compatible logic input provided to enable/disable both driver channels. When SHDN is in the logic low state, the LM5110 is switched to a low power standby mode with total supply current less than 25 A. This function can be effectively used for start-up, thermal overload, or short circuit fault protection. TI recommends connecting this pin to VCC when the shutdown function is not being used. The shutdown pin has an internal 18-A current source pullup to VCC. 8.4 Device Functional Modes The device operates in normal mode and UVLO mode. See Table 2 for more information on UVLO operation mode. In normal mode when the VCC and VIN-REF are above UVLO threshold, the output stage is dependent on the states of the IN_A, IN_B and nSHDN pins. The output HO and LO will be low if input state is floating. Table 2. INPUT/OUTPUT Logic Table IN_A (1) (2) (1) IN_B (1) SHDN OUT_A (2) OUT_B (2) L L H or Left Open L L L H H or Left Open L H H L H or Left Open H L H H H or Left Open H H X X L L L IN_A and IN_B is referenced to IN_REF. OUT_A and OUT_B is referenced to VEE. Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 11 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com 9 Applications and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI's customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information To operate fast switching of power MOSFETs at high switching frequencies and to reduce associated switching losses, a powerful gate driver is employed between the PWM output of controller and the gates of the power semiconductor devices. Also, gate drivers are indispensable when it is impossible for the PWM controller to directly drive the gates of the switching devices. With the advent of digital power, this situation is often encountered because the PWM signal from the digital controller is often a 3.3 V logic signal which cannot effectively turn on a power switch. Level shift circuit is needed to boost the 3.3 V signal to the gate-drive voltage (such as 12 V) in order to fully turn-on the power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar transistors in totem-pole arrangement prove inadequate with digital power because they lack level-shifting capability. Gate drivers effectively combine both the level-shifting and buffer-drive functions. Gate drivers also find other needs such as minimizing the effect of high-frequency switching noise (by placing the high-current driver IC physically close to the power switch), driving gate-drive transformers and controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving gate charge power losses from the controller into the driver. The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. 12 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 9.2 Typical Application VOUT VIN +10V +5V LM5110-1 VCC LM5110-1 VCC LM5025 CONTROLLER OUT_A IN_A IN_B OUT_B OUT_B IN_REF IN_REF OUT_B FB VEE VEE IN_B IN_A OUT_A OUT_A VEE VEE -3V Single Supply & Paralleled Inputs and Outputs Dual Supply utilizing negative Output voltage Drive Copyright (c) 2016, Texas Instruments Incorporated Figure 12. Simplified Power Converter Using Synchronous Rectifiers With Negative Off Gate Voltage 9.2.1 Design Requirements To select proper device from LM5110 family, TI recommends first checking the appropriate logic for the outputs. LM5110-2 has dual inverting outputs; LM5110-1 has dual noninverting outputs; LM5110-3 have inverting channel A and noninverting channel B. Moreover, some design considerations must be evaluated first in order to make the most appropriate selection. Among these considerations are VCC, drive current, and power dissipation. 9.2.2 Detailed Design Procedure 9.2.2.1 Parallel Outputs The A and B drivers may be combined into a single driver by connecting the INA/INB inputs together as close to the IC as possible, and the OUTA/OUTB outputs ties together if the external gate drive resistor is not used. In some cases where the external gate drive resistor is used, TI recommends that the resistor can be equally split in OUTA and OUTB respectively to reduce the parasitic inductance induce unbalance between two channels, as show in Figure 13. Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 13 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com Typical Application (continued) LM5110 1 IN_REF SHDN 8 2 IN_A 3 VEE VCC 6 4 IN_B OUT_B 5 RG INA OUT_A 7 RG INB 1.0 F 0.1 F 0.1 F + + VNEG VPOS Copyright (c) 2016, Texas Instruments Incorporated Figure 13. Parallel Operation of LM5110-1 and LM5110-2 Important consideration about paralleling two channels for LM5110 include: 1) IN_A and IN_B should be shorted in PCB layout as close to the device as possible, as well as for OUT_A and OUT_B, in which condition PCB layout parasitic mismatching between two channels could be minimized. 2) INA/B input slope signal should be fast enough to avoid mismatched VIH/VIL, td1/td2 between channel-A and channel-B. TI recommends having input signal slope faster than 20 V/s. 9.2.3 Application Curves Figure 14 and Figure 15 shows the total operation current comsumption vs load and frequency. 100 SUPPLY CURRENT (mA) VCC = 15V 10 VCC = 10V VCC = 5V 1 SUPPLY CURRENT (mA) 1000 TA = 25C CL = 2200pF 10 f = 500kHz 100 10 f = 100kHz 1 f = 10kHz 0.1 100 0.1 1 TA = 25C VCC = 12V 100 1000 1k 10k CAPACITIVE LOAD (pF) FREQUENCY (kHz) Figure 14. Operating Current vs Switching Frequency 14 Figure 15. Operating Current vs Load Capacitance Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 10 Power Supply Recommendations The recommended bias supply voltage range for LM5110 is from 3.5 V to 14 V. The upper end of this range is driven by the 15 V absolute maximum voltage rating of the VCC. TI recommends keeping proper margin to allow for transient voltage spikes. A local bypass capacitor must be placed between the VCC and IN_REF pins, as well as between the VCC and VEE. This capacitor must be placed as close to the device as possible. A low ESR, ceramic surface mount capacitor is recommended. TI recommends using 2 capacitors in parallel: a 100-nF ceramic surface-mount capacitor for high frequency filtering placed as close to VCC as possible, and another surface-mount capacitor, 220 nF to 10 F, for IC bias requirements. 11 Layout 11.1 Layout Guidelines Attention must be given to board layout when using LM5110. Some important considerations include: 1. A Low ESR/ESL capacitor must be connected close to the IC and between the VCC and VEE pins to support high peak currents being drawn from VCC during turn-on of the MOSFET. 2. Proper grounding is crucial. The drivers need a very low impedance path for current return to ground avoiding inductive loops. The two paths for returning current to ground are a) between LM5110 IN-REF pin and the ground of the circuit that controls the driver inputs, b) between LM5110 VEE pin and the source of the power MOSFET being driven. All these paths should be as short as possible to reduce inductance and be as wide as possible to reduce resistance. All these ground paths should be kept distinctly separate to avoid coupling between the high current output paths and the logic signals that drive the LM5110. A good method is to dedicate one copper plane in a multi-layered PCB to provide a common ground surface. 3. With the rise and fall times in the range of 10 ns to 30 ns, care is required to minimize the lengths of current carrying conductors to reduce their inductance and EMI from the high di/dt transients generated by the LM5110. 4. The LM5110 SOIC footprint is compatible with other industry standard drivers. Simply connect IN_REF pin of the LM5110 to VEE (pin 1 to pin 3) to operate the LM5110 in a standard single supply configuration. 5. If either channel is not being used, the respective input pin (IN_A or IN_B) should be connected to either IN_REF or VCC to avoid spurious output signals. If the shutdown feature is not used, the nSHDN pin should be connected to VCC to avoid erratic behavior that would result if system noise were coupled into a floating 'nSHDN' pin. Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 15 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com 11.2 Layout Example Figure 16. SOIC(8) Layout Example 11.3 Thermal Considerations The primary goal of thermal management is to maintain the integrated circuit (IC) junction temperature (TJ) below a specified maximum operating temperature to ensure reliability. It is essential to estimate the maximum TJ of IC components in worst case operating conditions. The junction temperature is estimated based on the power dissipated in the IC and the junction to ambient thermal resistance JA for the IC package in the application board and environment. The JA is not a given constant for the package and depends on the printed circuit board design and the operating environment. 11.3.1 Drive Power Requirement Calculations in LM5110 The LM5110 dual low side MOSFET driver is capable of sourcing/sinking 3-A/5-A peak currents for short intervals to drive a MOSFET without exceeding package power dissipation limits. High peak currents are required to switch the MOSFET gate very quickly for operation at high frequencies. VGATE VHIGH Q1 RG VTRIG CIN Q2 Figure 17. LM5110 drives MOSFET with Driver Output Stage and MOSFET Gate-Source Capacitance 16 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 Thermal Considerations (continued) The schematic above shows a conceptual diagram of the LM5110 output and MOSFET load. Q1 and Q2 are the switches within the gate driver. RG is the gate resistance of the external MOSFET, and CIN is the equivalent gate capacitance of the MOSFET. The gate resistance Rg is usually very small and losses in it can be neglected. The equivalent gate capacitance is a difficult parameter to measure since it is the combination of CGS (gate to source capacitance) and CGD (gate to drain capacitance). Both of these MOSFET capacitances are not constants and vary with the gate and drain voltage. The better way of quantifying gate capacitance is the total gate charge QG in coloumbs. QG combines the charge required by CGS and CGD for a given gate drive voltage VGATE. Assuming negligible gate resistance, the total power dissipated in the MOSFET driver due to gate charge is approximated by PDRIVER = VGATE x QG x FSW where * FSW = switching frequency of the MOSFET (1) As an example, consider the MOSFET MTD6N15 whose gate charge specified as 30 nC for VGATE = 12 V. The power dissipation in the driver due to charging and discharging of MOSFET gate capacitances at switching frequency of 300 kHz and VGATE of 12 V is equal to PDRIVER = 12 V x 30 nC x 300 kHz = 0.108 W. (2) If both channels of the LM5110 are operating at equal frequency with equivalent loads, the total losses will be twice as this value which is 0.216 W. In addition to the above gate charge power dissipation, - transient power is dissipated in the driver during output transitions. When either output of the LM5110 changes state, current will flow from VCC to VEE for a very brief interval of time through the output totem-pole N and P channel MOSFETs. The final component of power dissipation in the driver is the power associated with the quiescent bias current consumed by the driver input stage and undervoltage lockout sections. Characterization of the LM5110 provides accurate estimates of the transient and quiescent power dissipation components. At 300-kHz switching frequency and 30-nC load used in the example, the transient power will be 8 mW. The 1-mA nominal quiescent current and 12-V VGATE supply produce a 12-mW typical quiescent power. Therefore the total power dissipation PD = 0.216 + 0.008 + 0.012 = 0.236W. (3) We know that the junction temperature is given by TJ = PD x JA + TA (4) Or the rise in temperature is given by TRISE = TJ - TA = PD x JA (5) For SOIC-8 package JA is estimated as 114C/W see Thermal Information section. Therefore TRISE is equal to TRISE = 0.236 x 114 27C (6) For WSON-10 package, the integrated circuit die is attached to leadframe die pad which is soldered directly to the printed circuit board. This substantially decreases the junction to ambient thermal resistance (JA). JA as low as 40C/W is achievable with the WSON10 package. The resulting TRISE for the dual driver example above is thereby reduced to just 9.5. 11.3.2 Continuous Current Rating of LM5110 The LM5110 can deliver pulsed source/sink currents of 3 A and 5 A to capacitive loads. In applications requiring continuous load current (resistive or inductive loads), package power dissipation, limits the LM5110 current capability far below the 5-A sink/3-A source capability. Rated continuous current can be estimated both when sourcing current to or sinking current from the load. For example when sinking, the maximum sink current can be calculated using Equation 7. ISINK (MAX) := TJ(MAX) - TA TJA * RDS (ON) Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 17 LM5110 SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 www.ti.com Thermal Considerations (continued) where * RDS(on) is the on resistance of lower MOSFET in the output stage of LM5110. (7) Consider TJ(max) of 125C and JA of 114C/W for an SO-8 package under the condition of natural convection and no air flow. If the ambient temperature (TA) is 60C, and the RDS(on) of the LM5110 output at TJ(max) is 2.5 , this equation yields ISINK(max) of 478 mA which is much smaller than 5-A peak pulsed currents. Similarly, the maximum continuous source current can be calculated as TJ(MAX) - TA ISOURCE (MAX) := TJA * VDIODE where * VDIODE is the voltage drop across hybrid output stage which varies over temperature and can be assumed to be about 1.1 V at TJ(max) of 125C (8) Assuming the same parameters as above, this equation yields ISOURCE(max) of 518 mA. 18 Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 LM5110 www.ti.com SNVS255B - MAY 2004 - REVISED SEPTEMBER 2016 12 Device and Documentation Support 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2ETM Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.5 Glossary SLYZ022 -- TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright (c) 2004-2016, Texas Instruments Incorporated Product Folder Links: LM5110 19 PACKAGE MATERIALS INFORMATION www.ti.com 15-Jul-2018 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant LM5110-1MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5110-1SD WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-1SD/NOPB WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-1SDX/NOPB WSON DPR 10 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-2MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5110-2SD/NOPB WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-3MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1 LM5110-3SD WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-3SD/NOPB WSON DPR 10 1000 178.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 LM5110-3SDX/NOPB WSON DPR 10 4500 330.0 12.4 4.3 4.3 1.3 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 15-Jul-2018 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM5110-1MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5110-1SD WSON DPR 10 1000 210.0 185.0 35.0 LM5110-1SD/NOPB WSON DPR 10 1000 210.0 185.0 35.0 LM5110-1SDX/NOPB WSON DPR 10 4500 367.0 367.0 35.0 LM5110-2MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5110-2SD/NOPB WSON DPR 10 1000 210.0 185.0 35.0 LM5110-3MX/NOPB SOIC D 8 2500 367.0 367.0 35.0 LM5110-3SD WSON DPR 10 1000 210.0 185.0 35.0 LM5110-3SD/NOPB WSON DPR 10 1000 210.0 185.0 35.0 LM5110-3SDX/NOPB WSON DPR 10 4500 367.0 367.0 35.0 Pack Materials-Page 2 MECHANICAL DATA DPR0010A SDC10A (Rev A) www.ti.com IMPORTANT NOTICE Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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