PB4006, PB4008, PB4010
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Revision: 30-Jul-2018 1Document Number: 84808
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Enhanced isoCink+TM Bridge Rectifiers
*Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
FEATURES
• UL recognition file number E312394 (QQQX2) UL
1557 (see *)
• Enhanced high-current density single in-line
package
• Superior thermal conductivity
• Glass passivated chip junction
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case: PB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Notes
(1) With heatsink
(2) Without heatsink, free air
PRIMARY CHARACTERISTICS
Package PB
IF(AV) 40 A
VRRM 600 V, 800 V, 1000 V
IFSM 400 A
IR10 μA
VF at IF = 20 A 0.94 V
TJ max. 150 °C
Circuit configuration In-line
+
~~-
-~~+
~
~
isoCink+™
Case Style PB
+~~ -
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT
Maximum repetitive peak reverse voltage VRRM 600 800 1000 V
Average rectified forward current (Fig. 1, 2) TC = 87 °C (1)
IO
40 A
TA = 25 °C (2) 4.4
Non-repetitive peak forward surge current
8.3 ms single sine-wave, TJ = 25 °C IFSM 400 A
Rating for fusing (t < 8.3 ms) TJ = 25 °C I2t 664 A2s
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
PB4006, PB4008, PB4010
www.vishay.com Vishay General Semiconductor
Revision: 30-Jul-2018 2Document Number: 84808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: 10 ms pulse width
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward
voltage per diode (1) IF = 20 A TA = 25 °C VF 1.01 1.10 V
TA = 125 °C 0.94 1.00
Reverse current per diode (2) rated VR
TA = 25 °C IR -10
μA
TA = 125 °C 130 500
Typical junction capacitance per diode 4.0 V, 1 MHz CJ 120 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT
Typical thermal resistance RJC (1) 0.75 °C/W
RJA (2) 18
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
PB4006-E3/45 7.53 45 20 Tube
PB4006, PB4008, PB4010
www.vishay.com Vishay General Semiconductor
Revision: 30-Jul-2018 3Document Number: 84808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Forward Current Derating Curve
Fig. 3 - Forward Power Dissipation
Fig. 4 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
040 80 160
0
5
15
20
25
45
Case Temperature (°C)
Average Forward Output Current (A)
10
20 60 120
With Heatsink
Sine-Wave, R-Load
100 140
30
40
35
TCTC
TC Measured at Device Bottom
0
1
2
3
5
Ambient Temperature (°C)
Average Forward Rectified Current (A)
050
25 75 100 125 150
4
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
048121620 48
0
10
30
40
100
Average Forward Current (A)
Forward Power Dissipation (W)
20
70
60
50
322824 36 40 44
90
80
0.4 1.2
10
0.1
1
100
0.6 0.8 1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TA = 150 °C
TA = 125 °C
TA = 25 °C
1.10.5 0.7 0.9
TA = 100 °C
TA = 85 °C
1000
2010 604030 50 70 90 10080
0.01
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.1
T
A
= 100 °C
T
A
= 85 °C
0.1 110 100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
PB4006, PB4008, PB4010
www.vishay.com Vishay General Semiconductor
Revision: 30-Jul-2018 4Document Number: 84808
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type PB
0.066 (1.68)
REF.
0.214 (5.44) REF.
0.633 (16.07)
REF.
0.088 (2.24)
REF.
1.041 (26.44) REF.
0.070 (1.78) REF.
0.161 (4.1)
0.138 (3.5)
0.201 (5.1)
0.177 (4.5)
0.134 (3.4)
0.118 (3.0)
0.145 (3.7)
0.130 (3.3)
0.032 (0.80)
0.024 (0.60)
0.118 (3.0)
0.102 (2.6)
5° TYP. 5° TYP.
120° TYP.
Back Side View
Side View
Front Side View
1.193 (30.3)
1.169 (29.7)
0.799 (20.3)
0.776 (19.7)
0.205 (5.20)
0.189 (4.80)
0.708 (18.0)
0.669 (17.0)
0.165 (4.20)
0.150 (3.80)
0.303 (7.70)
0.287 (7.30)
0.303 (7.70)
0.287 (7.30)
0.402 (10.2)
0.386 (9.80)
0.043 (1.10)
0.035 (0.90)
0.094 (2.40)
0.079 (2.00)
0.106 (2.70)
0.091 (2.30)
0.441 (11.2)
0.425 (10.8)
0.118 (3.0) x 45°
CHAMFER
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Revision: 08-Feb-17 1Document Number: 91000
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