BC307/308/309 BC307/308/309 Switching and Amplifier Applications * Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309 Value Units -50 -30 V V -45 -25 V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC307 : BC308/309 Test Condition IC= -2mA, IB=0 Collector-Emitter Breakdown Voltage : BC307 : BC308/309 IC= -10A, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 ICES Collector Cut-off Current : BC307 : BC308/309 VCE= -45V, VBE=0 VCE= -25V, VBE=0 BVCES Min. Typ. Max. Units -45 -25 V V -50 -30 V V -5 V -2 -2 -15 -15 hFE DC Current Gain VCE= -5V, IC= -2mA VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -0.5 V V IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -0.7 -0.85 V V VBE (sat) Collector-Base Saturation Voltage 120 nA nA VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz Cib Input Capacitance VEB= -0.5V, IC=0, f=1MHz NF Noise Figure : BC307/308 : BC309 : BC309 -0.55 VCE= -5V, IC= -0.2mA, RG=2K, f=1KHz VCE= -5V, IC= -0.2mA RG=2K, f=30~15KHz 800 -0.3 -0.62 -0.7 V 130 MHz 6 pF 12 2 pF 10 4 4 dB dB dB hFE Classification Classification A B C hFE 120 ~ 220 180 ~ 460 380 ~ 800 (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC307/308/309 Electrical Characteristics Ta=25C unless otherwise noted BC307/308/309 Typical Characteristics -50 1000 IB = -400A VCE = -5V IB = -350A -40 IB = -300A -35 IB = -250A -30 IB = -200A -25 -20 IB = -150A -15 IB = -100A -10 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -45 100 10 IB = -50A -5 -2 -4 -6 -8 -10 -12 -14 -16 -18 1 -0.1 -20 -100 Figure 2. DC current Gain -10 -100 VCE = -5V IC = -10 IB IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic V BE(sat) -0.1 VCE(sat) -0.01 -0.1 -1 -10 -10 -1 -0.1 -0.0 -100 -0.2 IC[mA], COLLECTOR CURRENT 10 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2002 Fairchild Semiconductor Corporation -0.6 -0.8 -1.0 -1.2 Figure 4. Base-Emitter Capacitance fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz IE = 0 -0.4 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Cob[pF], CAPACITANCE -10 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -1 -1 1000 VCE = -5V 100 10 -1 -10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, August 2002 BC307/308/309 Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1