©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC307/308/309
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage
: BC307
: BC308/309 -50
-30 V
V
VCEO Collector-Emitter Voltage
: BC307
: BC308/309 -45
-25 V
V
VEBO Emitter-Base Voltage -5 V
ICCollector Current (DC) -100 mA
PCCollector Power Dissipation 500 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
BC307/308/309
Switching and Amplifier Applications
Low Noise: BC309
1. Collector 2. Base 3. Emitter
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC307/308/309
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCEO Collect or-E mit ter Breakdown Voltage
: BC307
: BC308/309
IC= -2m A , IB=0 -45
-25 V
V
BVCES Collect or-E mit ter Breakdown Voltage
: BC307
: BC308/309
IC= -10µA, VBE=0 -50
-30 V
V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICES Collector Cut-off Current
: BC307
: BC308/309 VCE= -45V, VBE=0
VCE= -25V, VBE=0 -2
-2 -15
-15 nA
nA
hFE DC Current Gain VCE= -5V, IC= -2mA 120 8 0 0
VCE (sat) Collector-Emitter Saturat ion Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -0.5 -0.3 V
V
VBE (sat) Collector-Base Sat urat ion Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA -0.7
-0.85 V
V
VBE (on) Base-E mit ter On Voltage VCE= -5V, IC= -2mA -0. 55 -0.62 -0. 7 V
fTCurrent Gain Bandwidth Product VCE= -5V, IC= -10mA, f=50MHz 130 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
Cib Input Capacitance VEB= -0.5V, IC=0, f=1MHz 12 pF
NF Noise Figure : BC307/308
: BC309
: BC309
VCE= -5V, IC= -0.2 mA,
RG=2K, f=1KHz
VCE= -5V, IC= -0.2 mA
RG=2K, f=30~15KHz 2
10
4
4
dB
dB
dB
Classification A B C
hFE 120 ~ 220 180 ~ 460 380 ~ 800
©2002 Fairchild Semiconductor Corporation
BC307/308/309
Rev. A2, August 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Capacitance
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = -50µA
IB = -100µA
IB = -150µA
IB = -200µA
IB = -250µA
IB = -300µA
IB = -350µA
IB = -400µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
VCE = -5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
IC = -10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE = -5V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz
IE = 0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
VCE = -5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
Package Dimensions
BC307/308/309
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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