MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1815 Features * 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Collector-current 0.15A Collector-base Voltage 60V Marking Code: C1815 * * * * NPN Silicon Epitaxial Transistor TO-92 Pin Configuration Bottom View E C A B E B Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO VBEF ICBO ICEO IEBO Collector-Emitter Breakdown Voltage* (IC=0.1mAdc, IB =0) Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Emitter-Base Voltage (IE =310mAdc) Collector Cutoff Current (VCB=60Vdc, IE =0Adc) Collector Cutoff Current (VCB=50Vdc, IE =0Adc) Emitter Cutoff Current (VEB =5.0Vdc, IC=0Adc) 50 Vdc 60 Vdc 1.45 Vdc C 0.1 uAdc 0.1 uAdc 0.1 uAdc D ON CHARACTERISTICS hFE(1) VCE(sat) VBE(sat) VBE DC Current Gain* (IC=2.0mAdc, V CE=6.0Vdc) Collector-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, IB =10mAdc) Base-Emitter Voltage (IE=310mAdc) 70 --- 700 0.25 Vdc 1.0 1.45 Vdc Vdc Transistor Frequency (IC=1.0mAdc, V CE=10Vdc, f=30MHz) 80 MHz CLASSIFICATION OF HFE (1) Rank Range O 70-140 Y 120-240 DIMENSIONS INCHES SMALL-SIGNAL CHARACTERISTICS fT G GR 200-400 BL 350-700 DIM A B C D E G MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/06/30