Features
• 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF
Amplifier and General Purpose Applications.
• Capable of 0.4Watts of Power Dissipation.
• Collector-current 0.15A
• Collector-base Voltage 60V
• Marking Code: C1815
2SC1815
NPN Silicon
Epitaxial Transistor
TO-92
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A
E
B
C
D
G
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage*
(IC=0.1mAdc, IB=0) 50 Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0) 60 Vdc
VBEF Emitter-Base Voltage
(IE=310mAdc) 1.45 Vdc
ICBO Collector Cutoff Current
(VCB=60Vdc, IE=0Adc) 0.1 uAdc
ICEO Collector Cutoff Current
(VCB=50Vdc, IE=0Adc) 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0Adc) 0.1 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain*
(IC=2.0mAdc, VCE=6.0Vdc) 70 700
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc) 0.25 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc) 1.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(IC=1.0mAdc, VCE=10Vdc, f=30MHz) 80 MHz
CLASSIFICATION OF HFE (1)
Rank O Y GR BL
Range 70-140 120-240 200-400 350-700
Pin Configuration
Bottom View E C B
VBE Base-Emitter Voltage
(IE=310mAdc) --- 1.45 Vdc
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Revision: 2 2003/06/30
omponents
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