© 2003 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 44N50 44 A
48N50 48 A
IDM TC= 25°C, pulse width limited by TJM 44N50 176 A
48N50 192 A
IAR TC= 25°C48A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.5 J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 15 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 300 °C
MdMounting torque TO-264 0.4/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250uA 500 V
VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS 100 µA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 44N50 120 mΩ
Note 1 48N50 100 mΩ
DS98612D(08/03)
PLUS 247TM (IXFX)
GD
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
S
G
D(TAB)
TO-264 AA (IXFK)
HiPerFETTM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low trr
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
switching (UIS) rated
zMolding epoxies meet UL 94 V-0
flammability classification
Applications
zDC-DC converters
zBattery chargers
zSwitched-mode and resonant-mode
power supplies
zDC choppers
zAC motor control
z Temperature and lighting controls
Advantages
zPLUS 247TM package for clip or spring
mounting
zSpace savings
zHigh power density
VDSS ID25 RDS(on)
IXFK/IXFX 48N50Q 500 V 48 A 100 mΩΩ
ΩΩ
Ω
IXFK/IXFX 44N50Q 500 V 44 A 120 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 30 42 S
Ciss 7000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 960 pF
Crss 230 pF
td(on) 33 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 22 ns
td(off) RG = 1 Ω (External), 75 n s
tf10 ns
Qg(on) 190 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 40 nC
Qgd 86 nC
RthJC 0.26 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 48 A
ISM Repetitive; 192 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr 250 ns
QRM 1.0 µC
IRM 10 A
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
© 2003 IXYS All rights reserved
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
30
60
90
120
02468101214161820
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
6
12
18
24
30
36
42
48
0 2 4 6 8 10 12 14 16
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
6
12
18
24
30
36
42
48
0123 45678
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. R
DS(on)
Norm alized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 48A
I
D
= 24A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
6
12
18
24
30
36
42
48
54
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0 1224364860728496108120
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFK/IXFX 48N50Q
IXFK/IXFX 44N50Q
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 24A
I
G
= 10mA
Fig. 7. Input Admittance
0
6
12
18
24
30
36
42
48
54
60
3.5 4 4.5 5 5.5 6 6.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 12. Maxim um Transient Therm al
Resistance
0.01
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
Fig. 8. Trans conductance
0
10
20
30
40
50
60
70
80
0 6 12 18 24 30 36 42 48 54 60
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
