© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 15 1Publication Order Number:
BC817−16LT1/D
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
•S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO 45 V
Collector − Base Voltage VCBO 50 V
Emitter − Base Voltage VEBO 5.0 V
Collector Current − Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
PD
300
2.4 mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23
CASE 318
STYLE 6
12
3
1
6x M G
G
6x = Device Code
x = A, B, or C
M = Date Code*
G= Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
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BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mA) V(BR)CEO 45 − − V
Collector−Emitter Breakdown Voltage
(VEB = 0, IC = 10 mA) V(BR)CES 50 − − V
Emitter−Base Breakdown Voltage
(IE = 1.0 mA) V(BR)EBO 5.0 − − V
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ICBO −
−−
−100
5.0 nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V) BC817−16, SBC817−16
BC817−25, SBC817−25
BC817−40, SBC817−40
(IC = 500 mA, VCE = 1.0 V)
hFE 100
160
250
40
−
−
−
−
250
400
600
−
−
Collector−Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V
Base−Emitter On Voltage
(IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz) Cobo − 10 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Specific Marking Package Shipping†
BC817−16LT1G
6A SOT−23
(Pb−Free)
3000 / Tape & Reel
NSVBC817−16LT1G
BC817−16LT3G 10,000 / Tape & Reel
SBC817−16LT3
BC817−25LT1G
6B SOT−23
(Pb−Free)
3000 / Tape & Reel
SBC817−25LT1G
BC817−25LT3G 10,000 / Tape & Reel
SBC817−25LT3G
BC817−40LT1G
6C SOT−23
(Pb−Free)
3000 / Tape & Reel
SBC817−40LT1G
BC817−40LT3G 10,000 / Tape & Reel
SBC817−40LT3G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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3
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
Figure 1. DC Current Gain vs. Collector
Current Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
10.10.010.001
0.01
0.1
1
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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4
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L
IB, BASE CURRENT (mA)
Figure 5. Saturation Region
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 7. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
TJ = 25°C
IC = 10 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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5
TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L
Figure 8. DC Current Gain vs. Collector
Current Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
500
10.10.010.001
0.01
0.1
1
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current Figure 11. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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6
TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L
IB, BASE CURRENT (mA)
Figure 13. Saturation Region
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 15. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
TJ = 25°C
IC = 10 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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7
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
Figure 16. DC Current Gain vs. Collector
Current Figure 17. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
700
10.10.010.001
0.001
0.1
1
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current Figure 19. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
10.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
IC/IB = 10
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
Figure 20. Current Gain Bandwidth Product
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
10001010.1
10
100
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
VCE = 1 V
TA = 25°C
1000
100
500
600
0.01
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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8
TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L
IB, BASE CURRENT (mA)
Figure 21. Saturation Region
100
10
1
VR, REVERSE VOLTAGE (VOLTS)
Figure 22. Temperature Coefficients
+1
IC, COLLECTOR CURRENT (mA)
Figure 23. Capacitances
0.1 1
1 10 100 1000
-2
-1
0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
10 100
TJ = 25°C
IC = 10 mA
qVC for VCE(sat)
qVB for VBE
Cob
Cib
100 mA 300 mA 500 mA
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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9
TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L,
SBC817−40L
Figure 24. Safe Operating Area
1
VCE (Vdc)
10.1
0.1
0.01 10 100
0.01
0.001
IC (A)
Single Pulse Test @ TA = 25°C
Thermal Limit
100 ms
1 s 10 ms
1 ms
BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
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10
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BC817−16LT1/D
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