NPN BDX33 - BDX33A - BDX33B - BDX33C PNP BDX34 - BDX34A - BDX34B - BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCEV Ratings Collector-Emitter Voltage Collector-EmitterVoltage COMSET SEMICONDUCTORS IB=0 Value BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Unit 45 60 V 80 100 45 60 V 80 100 1/6 NPN BDX33 - BDX33A - BDX33B - BDX33C PNP BDX34 - BDX34A - BDX34B - BDX34C Symbol Ratings IC(RMS) IC Collector Current ICM IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature COMSET SEMICONDUCTORS @ TC = 25 Value BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C Unit 10 A 15 0.25 A 70 Watts W/C -65 to +150 C 2/6 NPN BDX33 - BDX33A - BDX33B - BDX33C PNP BDX34 - BDX34A - BDX34B - BDX34C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value Unit 1.78 C/W BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol VCEO(SUS) VCER(SUS) Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=100 mA Collector-Emitter Sustaining IB=100 mA, RBE=100 Voltage (*) COMSET SEMICONDUCTORS Min Typ Mx Unit BDX33 BDX34 45 - - BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - BDX33C BDX34C 100 - - BDX33 BDX34 45 - - BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - BDX33C BDX34C 100 - - V V 3/6 NPN BDX33 - BDX33A - BDX33B - BDX33C PNP BDX34 - BDX34A - BDX34B - BDX34C Symbol VCEV(SUS) Ratings Test Condition(s) Collector-Emitter Sustaining IC=100 mA, VBE=-1.5 V Voltage (*) TCASE=25C VCB=22V ICEO VCB=30V VCB=40V VCB=50V Collector Cutoff Current TCASE=100C VCB=22V VCB=30V VCB=40V VCB=50V IEBO Emitter Cutoff Current VBE=-5 V ICBO Collector-Base Cutoff Current TCASE=25C VCBO=-45 V VCBO=-60 V VCBO=-80 V VCBO=100 V COMSET SEMICONDUCTORS Min Typ Mx Unit BDX33 BDX34 45 - - BDX33A BDX34A 60 - - BDX33B BDX34B 80 - - 100 - - - - - - - - - - - - - - - - - - - - - - - - - - - - BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C V 0.5 mA 10 4/6 5.0 0.2 mA mA NPN BDX33 - BDX33A - BDX33B - BDX33C PNP BDX34 - BDX34A - BDX34B - BDX34C Symbol Ratings Test Condition(s) ICBO Collector-Base Cutoff Current TCASE=100C VCBO=45 V VCBO=60 V VCBO=80 V VCBO=100 V IC=4.0 A, IB=8.0 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3.0 A, IB=6.0 mA VF Forward Voltage (pulse method) IF=8 A IC=4.0 A, VCE=3.0V VBE Base-Emitter Voltage (*) IC=3.0 A, VCE=-3V VCE=3.0 V, IC=4.0 A hFE DC Current Gain (*) VCE=3.0 V, IC=3.0 A BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX33A BDX34 BDX34A BDX33B BDX33C BDX34B BDX34C BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX33 BDX33A BDX34 BDX34A BDX33B BDX33C BDX34B BDX34C BDX33 BDX33A BDX34 BDX34A BDX33B BDX33C BDX34B BDX34C Min Typ Mx Unit - - - - - - - - - 5 mA 2.5 V - - 2.5 - - 4.0 - - 2.5 V V - - 2.5 750 - - 750 (*) Pulse Width 300 s, Duty Cycle 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit COMSET SEMICONDUCTORS - 5/6 - - NPN BDX33 - BDX33A - BDX33B - BDX33C PNP BDX34 - BDX34A - BDX34B - BDX34C MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 6/6