© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1Publication Order Number:
NTS12120EMFS/D
NTS12120EMFS,
NRVTS12120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Typical Applications
•Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•LED Lighting
•Instrumentation
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
•Lead Finish: 100% Matte Sn (Tin)
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL 1 Requirements
TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
120 VOLTS
http://onsemi.com
1,2,3 5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1212 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TE1212
AYWWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
NTS12120EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTS12120EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS12120EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS12120EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NTS12120EMFS, NRVTS12120EMFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR120
V
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV) 12 A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 163°C)
IFRM 24 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 200 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC 2.0 −°C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(IF = 6 A, TJ = 25°C)
(IF = 12 A, TJ = 25°C)
(IF = 6 A, TJ = 125°C)
(IF = 12 A, TJ = 125°C)
VF
0.6
0.735
0.515
0.588
−
0.83
−
0.69
V
Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
IR
1.73
3.75
2.4
3.87
−
55
−
30
mA
mA
mA
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
NTS12120EMFS, NRVTS12120EMFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
VF
, INSTANTANEOUS FORWARD VOLTAGE (V) VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.90.70.40.30.20.10
0.1
1
10
100
0.70.50.40.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
1009070504030100
1.E−07
1008070605020100
1.E−07
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C)
1001010.1
10
100
1000
10,000
140130120 1701101009080
0
5
10
15
20
25
iF
, INSTANTANEOUS FORWARD
CURRENT (A)
iF
, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
IF(AV), AVERAGE FORWARD CURRENT (A)
0.5 0.6 0.8 0.6 0.90.8
20 60 80 110 120
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
30 40 90 120110
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
TA = 125°C
TA = 150°C
TA = −55°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = −55°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = 25°C
TJ = 25°C
Square Wave
DC
RqJC = 2.0 °C/W
TA = 175°C
TA = 175°C
TA = 175°C
1.E−06
TA = 175°C
1.E−05
1.E−06
150 160
NTS12120EMFS, NRVTS12120EMFS
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
87653210
0
2
6
8
12
14
18
20
Figure 8. Thermal Characteristics
PULSE TIME (sec)
0.01 0.1 1000.0001 100.00001 0.0010.000001
0.01
0.1
1
10
100
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
PULSE TIME (sec)
0.010.001 0.10.0001 10.00001 100.000001
0.01
0.1
1
10
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
R(t) (°C/W)R(t) (°C/W)
49
4
10
16
1 1000
100 1000
Square Wave
DC
IPK/IAV = 20 IPK/IAV = 10
IPK/IAV = 5
TJ = 175°C
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1% Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
NTS12120EMFS, NRVTS12120EMFS
http://onsemi.com
5
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NTS12120EMFS/D
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