Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.4
IDM Pulsed Drain Current 58
PD @TA = 25°C Power Dissipation 2.5
Linear Derating Factor 0.02 mW/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 260 mJ
dv / dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,
TSTG Junction and Storage Temperature Range -55 to + 150 °C
IRF7413A
PD - 9.1613A
PRELIMINARY
VDSS = 30V
RDS(on) = 0.0135Ω
HEXFET® Power MOSFET
SO-8
Top View
81
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel Mosfet
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
Absolute Maximum Ratings
W
A
8/25/97
Thermal Resistance Ratings Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 50 °C/W
IRF7413A
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 6.6A, VGS = 0V
trr Reverse Recovery Time –– – 74 110 ns TJ = 25°C, IF = 7.3A
Qrr Reverse RecoveryCharge ––– 200 300 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
––– ––– 58
––– ––– 3.1
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 – –– –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.0135 VGS = 10V, ID = 6.6A
––– ––– 0.020 VGS = 4.5V, ID = 3.3A
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 10 ––– ––– S VDS = 10V, ID = 3.7A
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– –– – -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 20V
QgTotal Gate Charge –– – 52 7 9 ID = 7.3A
Qgs Gate-to-Source Charge ––– 6.1 9.2 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 16 23 VGS = 10 V, See Fig. 6 and 9
td(on) Turn-On Delay Time ––– 8.6 –– – VDD = 15V
trRise Time ––– 50 ––– ID = 7.3A
td(off) Turn-Off Delay Time ––– 52 ––– RG = 6.2Ω
tfFall Time ––– 46 ––– RD = 2.0Ω, See Fig. 10
Ciss Input Capacitance ––– 1800 ––– VGS = 0V
Coss Output Capacitance ––– 680 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 24 0 ––– ƒ = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Notes:
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Use IRF7413 data and test conditions
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7413A
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10
20µs PULS E WIDTH
T = 25 °C A
J
DS
V , D rain-to-S ource V oltage (V)
3.0V
VGS
TOP 15V
1 0V
7 .0V
5 .5V
4 .5V
4 .0V
3 .5V
BO TTO M 3. 0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to -Sou rce Vo lta ge (V)
D
I , Drain-to-S ource Current (A)
20µs PULS E WIDTH
T = 150°C
J
3.0V
VG S
TO P 1 5V
10V
7.0 V
5.5 V
4.5 V
4.0 V
3.5 V
BOTTOM 3.0 V
1
10
100
3.0 3.5 4.0 4.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-S o urce Voltage (V)
D
I , Dra in -to -So u r ce Cu r ren t (A)
A
V = 10V
20µs PULSE WID TH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Ju nc t io n T em perat u re ( °C )
R , D rain -to -Sourc e O n R e sistan ce
DS(on)
(Normalized)
V = 1 0V
GS
A
I = 7.3 A
D
IRF7413A
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
400
800
1200
1600
2000
2400
2800
3200
1 10 100
C, Capac itanc e (pF)
DS
V , D rai n- to - So ur c e V olt ag e (V )
A
V = 0 V, f = 1MHz
C = C + C , C SHO RTED
C = C
C = C + C
GS
iss gs g d ds
rs s g d
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 102030405060
Q , To tal Ga te C h arg e (nC )
G
V , Gate-to -Sou rc e Voltage (V)
GS
A
FO R TEST CIRCUIT
SEE FIGURE 9
I = 7.3A V = 24V
V = 15V
DDS
DS
1
10
100
0.4 1.2 2.0 2.8 3.6
T = 25°C
T = 15 0°C
J
J
V = 0V
GS
V , S o urc e- to -Dr ain V oltage (V)
I , R ev erse D rain Cu rren t (A )
SD
SD
A
IRF7413A
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
IRF7413A
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
o
ID
TOP
BOTTOM
3.3A
6.0A
7.3A
IRF7413A
Fig 13. For N-Channel HEXFETS
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Peak Diode Recovery dv/dt Test Circuit
IRF7413A
Part Marking Information
EXAM PLE : THIS IS AN IR F7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
WAFER
LOT C ODE
(LAST 4 DIGITS)
XXXX
BOTTOM
PART NUMBER
TOP
INTERNATIONAL
RECTIFIER
LOGO
F7101
312
SO8
SO8 Outline
Dimensions are shown in millimeters (inches)
Package Outline
K x 45°
C
8X
L
8X
θ
H
0.25 (.010) M A M
A
0.10 (.004)
B 8X
0.25 (.010) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.72 (.028 )
8X
1.78 (.070)
8X
6.46 ( .255 )
1.27 ( .050 )
3X
DIM INCHES MILLIMETERS
MIN MAX MIN MAX
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
B .014 .018 0.36 0.46
C .0075 .0098 0.19 0.25
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e .050 BASIC 1.27 BASIC
e1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .011 .019 0.28 0.48
L 0.16 .050 0.41 1.27
θ
0° 8° 0° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
5
6
A1
e1
IRF7413A
SO8
Dimensions are shown in millimeters (inches)
4.10 (.161 )
3.90 (.154 )
1.60 (.062)
1.50 (.059)
1.85 (.072)
1.65 (.065)
5.30 (.208)
5.10 (.201)
5.55 (.218)
5.45 (.215)
2.60 (.102)
1.50 (.059)
6.50 (.255)
6.30 (.248)
8.10 (.318)
7.90 (.311)
FEED DIRECTION
TERMINATION
NUMBER 1
2.05 (.080)
1.95 (.077)
0.3 5 (.013)
0.2 5 (.010)
12.30 (.484)
11.70 (.461)
2.20 (.086)
2.00 (.079)
15.40 (.607)
11.90 (.469)
2
50.00
(1.969)
MIN.
18.40 (.724)
MAX 3
14.40 (.566)
12.40 (.448)
3
330.00
(13.000)
MAX.
13.2 0 (.519)
12.8 0 (.504)
NOTES:
1 CONFORMS TO EIA-481-1
2 INC LU DES FLANGE DISTORTION @ OUTER EDGE
3 DIMENSIONS MEASURED @ HUB
4 CONTROLLING DIM ENSIO N : M ETRIC
1
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
Tape & Reel Information
