BAW56
Document number: DS12008 Rev. 21 - 2 1 of 4
www.diodes.com July 2012
© Diodes Incorporated
BAW56
DUAL SURFACE MOU NT SWITCHING DIODE
Features
Fast Switching Speed
Surface Mount Package Ideally Suited for Automated Insertion
For General Purpose Switching Applications
Two Diode Elements Connected in a Common Anode
Configuration
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BAW56-7-F Commercial SOT23 3,000/Tape & Reel
BAW56-13-F Commercial SOT23 10,000/Tape & Reel
BAW56Q-7-F Automotive SOT23 3,000/Tape & Reel
BAW56Q-13-F Automotive SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 1999 2000 ….. 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code J K L ….. U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
Top View
Int
e
rn
a
l
Sc
h
e
m
a
ti
c
K = SAT (Shanghai Assembly / Test site)
JD = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
KJD
YM
C = CAT (Chengdu Assembly / Test site)
JD = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
CJD
YM
BAW56
Document number: DS12008 Rev. 21 - 2 2 of 4
www.diodes.com July 2012
© Diodes Incorporated
BAW56
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 75 V
RMS Reverse Voltage VR
(
RMS
)
53 V
Forward Continuous Current (Note 5) IFM 300 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
@ t = 1.0s IFSM 2.0
1.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 350 mW
Thermal Resistance Junction to Ambient Air (Note 5) R
θ
JA 357 °C/W
Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V
(
BR
)
R 75 V IR = 2.5µA
Forward Voltage VF
0.715
0.855
1.0
1.25
V
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
Reverse Current (Note 6) IR
2.5
50
30
25
µA
µA
µA
nA
VR = 75V
VR = 75V, TJ = +150°C
VR = 25V, TJ = +150°C
VR = 20V
Total Capacitance CT 2.0 pF
VR = 0, f = 1.0MHz
Reverse Recovery Time trr 4.0 ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, w h ich can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
400
T , AMBIENT TEMPERATURE, (°C)
Fig. 1 Power Derating Curve , Total Package
A
P
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
,
200
100
300
0
500
0100 200
Note 5
0.1
1
0.01
0.001 01.5
1.0
0.5
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
F
BAW56
Document number: DS12008 Rev. 21 - 2 3 of 4
www.diodes.com July 2012
© Diodes Incorporated
BAW56
0.1
1
10
100
1,000
10,000
020 40 60 80 100
V , INSTANTANEOUS REVERSE VOL TAGE (V)
Fig. 3 Typical Reverse Characteristics, Per Element
R
I, I
N
S
T
A
N
T
A
N
E
O
U
S
R
EVE
R
SE
C
U
R
R
E
N
T
(nA)
R
0.0
0.2
0.4
0.6
0.8
1.8
1.6
1.4
1.2
1.0
2.0
010 20 4030
C
,
T
O
T
AL
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
V , DC REVERSE VOLT AGE (V)
Fig. 4 Total Capacitance vs. Reverse V oltage, Per Element
R
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
X E
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
BAW56
Document number: DS12008 Rev. 21 - 2 4 of 4
www.diodes.com July 2012
© Diodes Incorporated
BAW56
IMPORTANT NOTICE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2012, Diodes Incorporated
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