IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I V DSS R DS(on) ID 100 V 100 V < 0.16 < 0.16 16 A 11 A TYPICAL RDS(on) = 0.12 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 3 2 1 TO-220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value IRF530 V DS V DGR V GS Drain-source Voltage (V GS = 0) Unit IRF530FI 100 V Drain- gate Voltage (R GS = 20 k) 100 V G ate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C 16 11 A ID Drain Current (continuous) at Tc = 100 o C 11 7.8 A Drain Current (pulsed) 64 64 A I DM (*) P tot o T otal Dissipation at Tc = 25 C 90 40 W Derating Factor 0.6 0.27 W/ C Viso Insulation W ithstand Voltage (DC) T s tg Storage T emperature Tj Max. O perating Junct ion T emperature (*) Pulse width limited by safe operating area March 1999 - 2000 o V -65 to 175 o C 175 o C ( 1) ISD 16 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX 1/6 IRF530/FI THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case TO-220 T O-220FI 1 3.75 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Parameter 16 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) 100 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 100 Unit V T c = 125 oC V GS = 20 V 1 10 A A 100 nA ON () Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 A R DS(on) Static Drain-source On Resistance V GS = 10V ID = 8 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.12 0.16 16 A DYNAMIC Symbo l g f s () C iss C os s C rss 2/6 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 8 A V GS = 0 Min. Typ. 5 8 950 150 50 Max. Unit S 1300 270 70 pF pF pF IRF530/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on Time Rise Time V DD = 50 V R G = 4.7 Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD =80 V Min. ID = 8 A V GS = 10 V I D =16 A V GS = 10 V Typ. Max. Unit 12 20 16 28 ns ns 32 9 13 44 nC nC nC Typ. Max. Unit 11 12 25 15 17 35 ns ns ns Typ. Max. Unit 16 64 A A 1.6 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 80 V I D =16 A R G = 4.7 VGS = 10 V SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (*) Source-drain Current Source-drain Current (pulsed) V SD () Forward On Voltage I SD = 16 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =16 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/s o Tj = 150 C 150 ns 0.8 C 10 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 IRF530/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C IRF530/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 1 2 3 L2 L4 P011G 5/6 IRF530/FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. 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