Nov 2008 Release, Rev i sion C
Page 1
TAK CHEONG ®
SEMICONDUCTOR
Electrical Characteristics TA = 25°C unless otherwise noted Limits
Symbol Parameter Test Condition
Min Max Unit
BV Breakdown Voltage IR=10µA 30 Volts
IR Reverse Leakage Current VR=25V 2 uA
VF Forward Voltage TCBAT42,
TCBAT42 IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
0.24
0.32
0.40
0.50
0.80
Volts
TRR Reverse Recovery Time IF=IR=10mA
RL=100Ω
IRR=1mA
5 nS
C Capacitance VR=1V, f=1MHZ 10 pF
200mW SOD-323 SURFACE MOUNT
Very Small Outline Fl at Lead Plastic Package
Schottky Barrier Diode
Absolute Ma ximum Rati ng s TA = 25°C unless otherwise noted
Symbol Parameter Value Units
PD Power Dissipation 200 mW
TSTG Storage Temperature Range -65 to +125 °C
TJ Operating Junction Temperature +125 °C
VRRM Repetitive Peak Reverse Voltage 30 V
VR Maximum DC Blocking Voltage 30 V
IF(AV) Average Forward Rectified Current 200 mA
IFSM Peak Forward Surge Current 4 A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Low Forward Voltage Drop
Flat Lead SOD-323 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODES:
Device Type Device Marking
BAT54WS B6
BAT54WS