1N5221C to 1N5267C Vishay Semiconductors Small Signal Zener Diodes Features * Silicon Planar Power Zener Diodes. * Standard Zener voltage tolerance is 2 %. Applications Voltage stabilization Mechanical Data 94 9367 Case: DO-35 Glass case Weight: approx. 125 mg Packaging codes/options: TAP / 10 k per Ammopack (52 mm tape), 30 k/box TR / 10 k per 13 " reel , 30 k/box Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Symbol Value Unit PV 500 mW Z-current IZ PV/VZ mA Junction temperature Tj 200 C Tstg - 65 to + 200 C Test condition Symbol Value Unit l = 9.5 mm (3/8 "), TL=constant RthJA 300 K/W Power dissipation Test condition TL 75 C Storage temperature range Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Junction ambient Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Document Number 84613 Rev. 1.0, 02-Sep-04 Test condition IF = 200 mA Symbol VF Min Typ. Max Unit 1.1 V www.vishay.com 1 1N5221C to 1N5267C Vishay Semiconductors Electrical Characteristics 1N5221C...1N5267C Partnumber Nominal Zener Test Current Voltage1) Maximum Dynamic Impedance1) IZT ZZT @ IZT Typical Temperature of Coeffizient ZZK @ IZK = 0.25 mA @ IZT Maximum Reverse Leakage Current IR VR V mA (%/K) A V 1N5221C 2.4 20 30 1200 -0.085 100 1 1N5222C 2.5 20 30 1250 -0.085 100 1 1N5223C 2.7 20 30 1300 -0.080 75 1 1N5224C 2.8 20 30 1400 -0.080 75 1 1N5225C 3 20 29 1600 -0.075 50 1 1N5226C 3.3 20 28 1600 -0.070 25 1 1N5227C 3.6 20 24 1700 -0.065 15 1 1N5228C 3.9 20 23 1900 -0.060 10 1 1N5229C 4.3 20 22 2000 +0.055 5 1 1N5230C 4.7 20 19 1900 +0.030 5 2 1N5231C 5.1 20 17 1600 +0.030 5 2 1N5232C 5.6 20 11 1600 +0.038 5 3 1N5233C 6 20 7 1600 +0.038 5 3.5 1N5234C 6.2 20 7 1000 +0.045 5 4 1N5235C 6.8 20 5 750 +0.050 3 5 1N5236C 7.5 20 6 500 +0.058 3 6 1N5237C 8.2 20 8 500 +0.062 3 6.5 1N5238C 8.7 20 8 600 +0.065 3 6.5 1N5239C 9.1 20 10 600 +0.068 3 7 1N5240C 10 20 17 600 +0.075 3 8 1N5241C 11 20 22 600 +0.076 2 8.4 1N5242C 12 20 30 600 +0.077 1 9.1 1N5243C 13 9.5 13 600 +0.079 0.5 9.9 1N5244C 14 9 15 600 +0.082 0.1 10 1N5245C 15 8.5 16 600 +0.082 0.1 11 1N5246C 16 7.8 17 600 +0.083 0.1 12 1N5247C 17 7.4 19 600 +0.084 0.1 13 1N5248C 18 7 21 600 +0.085 0.1 14 1N5249C 19 6.6 23 600 +0.086 0.1 14 1N5250C 20 6.2 25 600 +0.086 0.1 15 1N5251C 22 5.6 29 600 +0.087 0.1 17 1N5252C 24 5.2 33 600 +0.088 0.1 18 1N5253C 25 5 35 600 +0.089 0.1 19 1N5254C 27 4.6 41 600 +0.090 0.1 21 1N5255C 28 4.5 44 600 +0.091 0.1 21 1N5256C 30 4.2 49 600 +0.091 0.1 23 1N5257C 33 3.8 58 700 +0.092 0.1 25 1N5258C 36 3.4 70 700 +0.093 0.1 27 1N5259C 39 3.2 80 800 +0.094 0.1 30 1N5260C 43 3 93 900 +0.095 0.1 33 1N5261C 47 2.7 105 1000 +0.095 0.1 36 1N5262C 51 2.5 125 1100 +0.096 0.1 39 1N5263C 56 2.2 150 1300 +0.096 0.1 43 1N5264C 60 2.1 170 1400 +0.097 0.1 46 www.vishay.com 2 @ IZT, VZ Maximum Dynamic Impedance Document Number 84613 Rev. 1.0, 02-Sep-04 1N5221C to 1N5267C Vishay Semiconductors Partnumber Nominal Zener Test Current Voltage1) Maximum Dynamic Impedance1) 1) @ IZT, VZ IZT ZZT @ IZT Maximum Dynamic Impedance Typical Temperature of Coeffizient ZZK @ IZK = 0.25 mA @ IZT Maximum Reverse Leakage Current IR VR V mA (%/K) A V 1N5265C 62 2 185 1400 +0.097 0.1 47 1N5266C 68 1.8 230 1600 +0.097 0.1 52 1N5267C 75 1.7 270 1700 +0.098 0.1 56 Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W 500 1.3 VZtn - RelativeVoltageChange RthJA -Therm.Resist.Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 C unless otherwise specified) 400 300 l l 200 100 1.2 TK VZ =10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 0 1.0 -2 x 10-4/K -4 x 10-4/K 0.9 TL=constant 0 0 5 10 0.8 -60 20 15 l - Lead Length ( mm ) 95 9611 Tj =25C 100 I Z=5mA 10 60 120 180 240 Figure 3. Typical Change of Working Voltage vs. Junction Temperature Ptot -Total Power Dissipation ( mW) 1000 0 Tj - Junction Temperature (C ) 95 9599 Figure 1. Thermal Resistance vs. Lead Length VZ -VoltageChange( mV ) V Ztn=V Zt/V Z(25C) 600 500 400 300 200 100 1 0 0 5 95 9598 10 15 20 25 V Z - Z-Voltage ( V ) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25C Document Number 84613 Rev. 1.0, 02-Sep-04 0 95 9602 40 80 120 160 200 Tamb - Ambient Temperature(C ) Figure 4. Total Power Dissipation vs. Ambient Temperature www.vishay.com 3 1N5221C to 1N5267C TK VZ -Temperature Coefficient of VZ ( 10-4 /K) Vishay Semiconductors 100 80 IZ - Z-Current ( mA) 15 10 5 I Z=5mA 0 Ptot=500mW Tamb=25C 60 40 20 0 -5 0 10 20 30 40 50 V Z - Z-Voltage ( V ) 95 9600 0 16 20 V Z - Z-Voltage ( V ) 50 150 V R=2V Tj =25C 100 50 Ptot=500mW Tamb=25C 40 IZ - Z-Current ( mA) CD - Diode Capacitance ( pF ) 12 Figure 8. Z-Current vs. Z-Voltage 200 30 20 10 0 0 0 5 10 15 20 25 V Z - Z-Voltage ( V ) 95 9601 15 20 10 Tj =25C 1 0.1 0.01 1000 I Z=1mA 100 5mA 10 10mA Tj =25C 1 0.001 0 0.2 0.4 0.6 0.8 1.0 V F - Forward Voltage ( V ) 95 9605 Figure 7. Forward Current vs. Forward Voltage www.vishay.com 35 30 Figure 9. Z-Current vs. Z-Voltage r Z - Differential Z-Resistance ( ) 100 25 V Z - Z-Voltage ( V ) 95 9607 Figure 6. Diode Capacitance vs. Z-Voltage I F - Forward Current ( mA) 8 95 9604 Figure 5. Temperature Coefficient of Vz vs. Z-Voltage 4 4 0 95 9606 5 10 15 20 25 V Z - Z-Voltage ( V ) Figure 10. Differential Z-Resistance vs. Z-Voltage Document Number 84613 Rev. 1.0, 02-Sep-04 1N5221C to 1N5267C Zthp -ThermalResistancefor PulseCond.(K/W) Vishay Semiconductors 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 RthJA=300K/W T=Tjmax-Tamb tp/T=0.01 tp/T=0.1 tp/T=0.02 tp/T=0.05 1 10-1 i ZM =(-VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 100 101 102 tp - Pulse Length ( ms ) 95 9603 Figure 11. Thermal Response Package Dimensions in mm (Inches) Cathode Identification 0.55 (0.02) max. ISO Method E 94 9366 2.0 (0.08) max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Document Number 84613 Rev. 1.0, 02-Sep-04 26 (1.02) min. 3.9 (0.15) max. 26 (1.02) min. www.vishay.com 5 1N5221C to 1N5267C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 84613 Rev. 1.0, 02-Sep-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1