BAT54WS-V-GS18 - Vishay Presicion Group

BAT54WS-V

Document Number 85667

Rev. 1.5, 05-Aug-10

Vishay Semiconductors

www.vishay.com

20145

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Small Signal Schottky Diode

Features

• These diodes feature very low turn-on

voltage and fast switching

• These devices are protected by a PN

junction guard ring against excessive

voltage, such as electrostatic discharges

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

GS18/10k per 13" reel (8 mm tape), 10k/box

GS08/3k per 7" reel (8 mm tape), 15k/box

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Note

1) Valid provided that electrodes are kept at ambient temperature

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Note

1) Valid provided that electrodes are kept at ambient temperature

Part Ordering code Type marking Remarks

BAT54WS-V BAT54WS-V-GS18 or BAT54WS-V-GS08 L4 Tape and reel

Parameter Test condition Symbol Value Unit

Repetitive peak reverse voltage VRRM 30 V

Forward continuous current IF200 1) mA

Repetitive peak forward current IFRM 300 1) mA

Surge forward current tp < 1 s IFSM 600 1) mA

Power dissipation 1) Ptot 150 1) mW

Parameter Test condition Symbol Value Unit

Thermal resistance junction to ambient air RthJA 650 1) K/W

Maximum junction temperature Tj125 °C

Storage temperature range Tstg - 65 to + 150 °C

www.vishay.com

Document Number 85667

Rev. 1.5, 05-Aug-10

BAT54WS-V

Vishay Semiconductors

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Note

1) Pulse test: tp < 300 µs, θ < 2 %

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter Test condition Symbol Min. Typ. Max. Unit

Reverse breakdown voltage tested with 100 µA pulses V(BR) 30 V

Leakage current 1) VR = 25 V IR2µA

Forward voltage 1)

IF = 0.1 mA VF240 mV

IF = 1 mA VF320 mV

IF = 10 mA VF400 mV

IF = 30 mA VF500 mV

IF = 100 mA VF800 mV

Diode capacitance VR = 1 V, f = 1 MHz CD10 pF

Reverse recovery time IF = IR = 10 mA; IR = 1 mA; RL = 100 Ωtrr 5ns

Figure 1. Typical Forward Current vs. Forward Voltage

vs. Various Temperatures

Figure 2. Typical Capacitance vs. Reverse Applied Voltage

18867

1000

100

0.1

0.01

I - Forward Current (mA)

00.4

0.6 1.2 1.4

0.810.2

VF- Forward Voltage (V)

= 125 °CTj

25 °C

- 40 °C

18868

00 4 12 16 20 24 28

C - Typical Capacitance (pF)

VR- Reverse Voltage (V)

Figure 3. Typical Reverse Current vs. Reverse Voltage

vs. Various Temperatures

100

1000

0.1

0.01

510152002530

VR- Reverse Voltage (V)

I - Reverse Current (µA)

18869

= 125 °CTj

100 °C

75 °C

50 °C

25 °C

BAT54WS-V

Document Number 85667

Rev. 1.5, 05-Aug-10

Vishay Semiconductors

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Package Dimensions in millimeters (inches): SOD-323

Foot print recommendation:

Rev. 5 - Date: 23.Sept.2009

17443

Document no.:S8-V-3910.02-001 (4)

0.6 (0.024)

0.6 (0.024)0.6 (0.024)

1.6 (0.063)

0.10 (0.004)

Cathode bar

0.20 (0.008)

0.40 (0.016)

2.50 (0.098)

1.1 (0.043)

1.5 (0.059)

2.85 (0.112)

1.60 (0.063)

1.95 (0.077)

0.15 (0.006)

0.1 (0.004) max.

1.15 (0.045)

0.8 (0.031)

Created - Date: 24.August.2004

0.40 (0.016)

0.25 (0.010)

0.2 (0.008)

0° to 8°

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Revision: 12-Mar-12 1Document Number: 91000

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