Features * * * * * * Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. PIN 1 + CASE PIN 2 PIN 3 1 2 3 TO-220AB Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Parameter Units 2535CT 2545CT 2550CT 2560CT 35 45 50 60 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current .375 " lead length @ TA = 130C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +175 C Operating Junction Temperature -65 to +150 C Value Units W IFSM Tstg TJ V 30 A 150 A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter PD PowerDissipation 2.0 RJA Thermal Resistance, Junction to Ambient 60 C/W RJL Thermal Resistance, Junction to Lead 1.5 C/W Electrical Characteristics Symbol TA = 25C unless otherwise noted Device Parameter 2535CT VF IR IRRM Forward Voltage IF = 15 A, TC = 25C IF = 15 A, TC = 125C IF = 30 A, TC = 25C IF = 30 A, TC = 125C Reverse Current @ rated VR TA = 25C TA = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 2545CT Units 2550CT 2560CT 0.82 0.73 0.75 0.65 - V V V V 0.2 40 1.0 50 mA mA 1.0 0.5 A MBR2535CT - MBR2560CT, Rev. C MBR2535CT - MBR2560CT MBR2535CT - MBR2560CT (continued) 30 24 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 Ambient Temperature [C] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve 125 100 75 50 25 0 1 2 5 10 20 50 Number of Cycles at 60Hz 50 MBR2535CT-MBR2545CT TA = 25 C T A = 150 C Reverse Current, IR [mA] 10 MBR2550CT-MBR2560CT 1 MBR2535CT-MBR2545CT 0.1 10 T A = 125 C MBR2550CT-MBR2560CT 1 TA = 75 C 0.1 MBR2535CT-MBR2545CT 0.01 TA = 25 C S Pulse Width = 300 2% Duty Cycle 0.01 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1 2000 MBR2535CT-MBR2545CT 1000 MBR2550CT-MBR2560CT 500 200 1 10 Reverse Voltage, VR [V] Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 100 MBR2550CT-MBR2560CT 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage Transient Thermal Impedance [C/W] 5000 100 0.1 0.001 1.2 Figure 3. Forward Voltage Characteristics Total Capacitance, CT [pF] 100 Figure 2. Non-Repetitive Surge Current 50 Forward Current, IF [A] 150 100 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics MBR2535CT - MBR2560CT, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4