2011-09-191
BCP69-25
1
2
3
4
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCP68 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCP69-25 ...-25* 1=B 2=C 3=E 4=C - - SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 20 V
Collector-emitter voltage VCES 25
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 5
Collector current IC1 A
Peak collector current, tp ≤ 10 ms ICM 2
Base current IB100 mA
Peak base current IBM 200
Total power dissipation-
TS ≤ 114 °C
Ptot 3 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 12 K/W
2011-09-192
BCP69-25
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
V(BR)CEO 20 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 25 - -
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V(BR)CES 25 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
100
µA
DC current gain2)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V, BCP69-16
IC = 500 mA, VCE = 1 V, BCP69-25
IC = 1 A, VCE = 1 V
hFE
50
100
160
60
-
160
250
-
-
250
375
-
-
Collector-emitter saturation voltage2)
IC = 1 A, IB = 100 mA
VCEsat - - 0.5 V
Base-emitter voltage2)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE(ON)
-
-
0.6
-
-
1
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT- 100 - MHz
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
2011-09-193
BCP69-25
DC current gain hFE = ƒ(IC)
VCE = 1 V
10
EHP00285BCP 69
04
10
mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
2
10
˚C
5
100
25 ˚C
˚C
-50
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0
10
EHP00286BCP 69
CEsat
V
0.4 V 0.8
0
10
1
10
2
4
10
5
5
Ι
C
mA
5
3
10
0.2 0.6
˚C
100
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
0
10
EHP00287BCP 69
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
˚C
100
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
0
10
EHP00284BCP 69
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
2011-09-194
BCP69-25
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00283BCP 69
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
ts
0
0.5
1
1.5
2
2.5
W
3.5
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
RthJS
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-09-195
BCP69-25
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-09-196
BCP69-25
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
