SURMOUNTTM Low Barrier 0201 Footprint
Silicon Schottky Diodes
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
Series V1
MA4E2501-1290
A
C
D E F
G
B
Features
•Extremely Low Parasitic Capitance and
Inductance
•Extremely Small 0201 (600x300um) Footprint
•Surface Mountable in Microwave Circuits, No
Wirebonds Required
•Rugged HMIC Construction with Polyimide
Scratch Protection
•Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C,
16 hours)
•Lower Susceptibility to ESD Damage
Description and Applications
The MA4E2501L-1290 SurMount Diodes are
Silicon Low Barrier Schottky Devices fabricated with
the patented Heterolithic Microwave Integrated
Circuit (HMIC) process. HMIC circuits consist of
Silicon pedestals which form diodes or via
conductors embedded in a glass dielectric, which
acts as the low dispersion, microstrip transmission
medium. The combination of silicon and glass allows
HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable
device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky
diodes.
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
The extremely small “ 0201 ” outline allows for
Surface Mount placement and multi-functional
polarity orientations.
Case Style 1290
The MA4E2501L-1290 SurMount Low Barrier
Schottky diodes are recommended for use in
microwave circuits through Ku band frequencies for
lower power applications such as mixers,
sub-harmonic mixers, detectors and limiters. The
HMIC construction facilitates the direct replacement
of more fragile beam lead diodes with the
corresponding Surmount diode, which can be
connected to a hard or soft substrate circuit with
solder.
Dim
Inches Millimeters
Min. Max. Min. Max.
A 0.023 0.025 0.575 0.625
B 0.011 0.013 0.275 0.325
C 0.004 0.008 0.102 0.203
D 0.006 0.150
E 0.007 0.009 0.175 0.225
0.008 0.200
F 0.006 0.008 0.150 0.200
G 0.009 0.011 0.220 0.270
-
Cathode +
Anode
SURMOUNTTM Low Barrier 0201 Footprint
Silicon Schottky Diodes
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
2
Series V1
MA4E2501-1290
Electrical Specifications @ 25 °C
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. The top surface of the die
has a protective polyimide coating to minimize
damage.
The rugged construction of these SurMount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry
standard electrostatic discharge (ESD) control is
required at all times, due to the sensitive nature of
Schottky junctions.
Bulk handling should insure that abrasion and
mechanical shock are minimized.
Die Bonding
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the
bottom surface of these devices, and are opposite
the active junction. The devices are well suited for
higher temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage. Die attach with Electrically
Conductive Silver Epoxy is Not Recommended.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are
aligned with the circuit board mounting pads. Reflow
the solder paste by applying Equal heat to the circuit
at both die-mounting pads. The solder joint must Not
be made one at a time, creating un-equal heat flow
and thermal stress. Solder reflow should Not be
performed by causing heat to flow through the top
surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is
completed.
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted) 1
1. Operation of this device above any one of these parameters
may cause permanent damage.
Parameter Absolute Maximum
Operating Temperature -40 °C to +150 °C
Storage Temperature -40 °C to +150 °C
Forward Current 20 mA
Reverse Voltage 5 V
RF C.W. Incident Power + 20 dBm
RF & DC Dissipated Power 50 mW
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Model
Number Type Recommended
Frequency Range Vf @ 1 mA
( mV ) Vb @ 10 uA
( V ) Ct @ 0V
( pF ) Rt Slope Resistance
( Vf1 - Vf2 )/(10.5mA-9.5mA )
( Ω )
MA4E2501L-
1290 Low
Barrier DC - 18 GHz 330 Max
300 Typ
3 Min
5 Typ 0.12 Max
0.10 Typ 10 Typ
14 Max
SURMOUNTTM Low Barrier 0201 Footprint
Silicon Schottky Diodes
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
3
Series V1
MA4E2501-1290
MA4E2501L-1290 Low Barrier SPICE PARAMETERS
Is
(nA) Rs
( Ω )
N Cj0
( pF ) M
Ik
(mA)
Cjpar
(pF)
Vj
(V)
FC BV
(V) IBV
(mA)
26 12.8 1.20 1.0 E-2 0.5 14 9.0 E-2 8.0 E-2 0.5 5.0 1.0 E-2
Circuit Mounting Dimensions (Inches)
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.140
0 100 200 300 400 500
Frequency (MHz)
Total Capacitance (pF)
Typical Performance
0.007
0.010
0.008
0.007
0.010
Ordering Information
Part Number Package
MA4E2501L-1290W Wafer on Frame
MA4E2501L-1290 Die in Carrier
MA4E2501L-1290T Tape/Reel
