2PD601BSL,215 - NXP Semiconductors

1. Product profile

1.1 General description

NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

Collector current IC≤200 mA

Two current ga in sele ct ion s

AEC-Q101 qualified

Small SMD plastic package

1.3 Applications

General-purpose switching and amplification

1.4 Quick reference data

2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

Rev. 1 — 28 June 2010 Product data sheet

Table 1. Product overview

Type number Package PNP complement

NXP JEDEC

2PD601BRL SOT23 TO-236AB 2PB709BRL

2PD601BSL 2PB709BSL

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 50 V

ICcollector current - - 200 mA

hFE DC current gai n VCE =10V;

IC=2mA 210 - 460

hFE group R 210 - 340

hFE group S 290 - 460

Product data sheet Rev. 1 — 28 June 2010 2 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

sym02

Table 4. Ordering information

Type number Package

Name Description Version

2PD601BRL - plastic surface-mounted package; 3 leads SOT23

2PD601BSL

Table 5. Marking codes

Type number Marking code[1]

2PD601BRL ML*

2PD601BSL MM*

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 60 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 200 mA

ICM peak collector current single pulse;

tp≤1ms -300mA

IBM peak base current single pulse;

tp≤1ms -200mA

Product data sheet Rev. 1 — 28 June 2010 3 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Ptot total power dissipation Tamb ≤25 °C[1] -250mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

FR4 PCB, standard footprint

Fig 1. Power derating curve

Table 6. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Tamb (°C)

−75 17512525 75−25

006aaa990

100

200

300

Ptot

(mW)

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction

to ambient in free air [1] - - 500 K/W

Rth(j-sp) thermal resistance from junction

to solder point - - 140 K/W

Product data sheet Rev. 1 — 28 June 2010 4 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valu es

006aaa991

10−51010−2

10−4102

10−1

tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.75

0.50

0.33

0.20

0.01

0.10

0.05

0.02

δ = 1

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current VCB =60V; I

E=0A--10nA

VCB =60V; I

E=0A;

Tj= 150 °C--5μA

IEBO emitter-base cut-off current VEB =5V; I

C=0A --10nA

hFE DC current gai n VCE =10V;

IC=2mA 210 - 460

hFE group R 210 - 340

hFE group S 290 - 460

VCEsat collector-emitter saturation

voltage IC=100mA;

IB=10mA [1] - - 250 mV

fTtransition frequency VCE =6V;

IC=10mA;

f=100MHz

100 250 - MHz

Cccollector capacitance VCB =10V;

IE=i

e=0A;

f=1MHz

--3pF

Product data sheet Rev. 1 — 28 June 2010 5 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

VCE = 10 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Tamb =25°C

Fig 3. 2PD601B RL: DC current gain as a function of

collector current; typical values Fig 4. 2PD601BRL: Collector current as a function of

collector-emitter voltage; typical values

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 5. 2PD601BRL: Collecto r-emitter saturation voltage as a function of collector current; typical values

006aac451

200

300

100

400

500

hFE

IC (mA)

10−1103

102

110

(1)

(3)

(2)

VCE (V)

0108462

006aac452

0.04

0.06

0.02

0.08

0.1

(A)

IB (mA) = 0.56 0.50

0.44

0.38

0.32

0.26

0.20

0.14

0.08

0.02

006aac453

IC (mA)

10−1103

102

110

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

Product data sheet Rev. 1 — 28 June 2010 6 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

VCE = 10 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Tamb =25°C

Fig 6. 2PD601BSL: DC current gain as a function of

collector current; typical values Fig 7. 2PD601BSL: Collector current as a function of

collector-emitter voltage; typical values

IC/IB = 10

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 8. 2PD601BSL: Collector-emitter saturation voltage as a function of collecto r current; typical values

006aac454

200

400

600

hFE

IC (mA)

10−1103

102

110

(1)

(3)

(2)

VCE (V)

0.0 10.08.04.0 6.02.0

006aac455

0.04

0.08

0.12

(A)

0.0

IB (mA) = 0.56

0.50

0.44 0.38

0.32

0.26

0.20

0.14

0.08

0.02

006aac456

IC (mA)

10−1103

102

110

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

Product data sheet Rev. 1 — 28 June 2010 7 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in auto motive applications.

9. Package outline

Fig 9. Package outline SOT23 (TO-236AB)

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

Product data sheet Rev. 1 — 28 June 2010 8 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Pack ing quantity

3000 10000

2PD601BRL SOT23 4 mm pitch, 8 mm tape and reel -215 -235

2PD601BSL

Fig 10. Reflow soldering footprint SOT23 (TO -236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

Product data sheet Rev. 1 — 28 June 2010 9 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

Fig 11. Wave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 1 — 28 June 2010 10 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

12. Revision history

Table 10. Revision history

Document ID Release date Data she et status Change notice Supersedes

2PD601BRL_2PD601BSL v.1 20100628 Product data sheet - -

Product data sheet Rev. 1 — 28 June 2010 11 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

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information included herein and shall have no liab ility for the consequences of

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agr eed between

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Product data sheet.

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Notwithstanding any damages that customer might incur for any reason

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representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 28 June 2010 12 of 13

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors 2PD601BRL; 2PD601BSL

50 V, 200 mA NPN general-purpose transistors

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 June 2010

Document identifier: 2PD601BRL_2PD601BSL

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13