SILICON POWER TRANSISTOR PNP TIP2955 15A 90W Technical Data ...designed for general-purpose switching and amplifier application. F DC Current Gain - h FE = 20 - 70 @ IC = 4Adc F Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4Adc F Excellent Safe Operating Area F TO-218 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage V CEO 60 Vdc Collector- Emitter Voltage V CER 70 Vdc Collector - Base Voltage Emitter Base Voltage Collector Current - Continuos V CB V EB IC 100 7 15 Vdc Vdc Adc Base Current - Continuos IB 7 Adc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage junction Temperature Range PD Tj,Tstg 90 0.72 -65 to +150 Watts W/C C Symbol Max. THERMAL CHARACTERISTICS Characteristic Thermal resistance junction to case R thjc 1.39 Unit C/W ELECTRICAL CHARACTERISTICS :[ Tc = 25 Characteristic Symbol * OFF CHARACTERISTICS : Collector-Emitter Sustaining Voltage (1) VCEO(sus) [ Ic =30 mAdc, IB = 0 ] Collector Cutoff Current ICER [ VCE = 70 Vdc, RBE= 100ohms ] Collector Cutoff Current ICE0 [ VCE = 30 Vdc, IB = 0 ] C unless otherwise noted ] Min Typ Max 60 Unit Vdc 1.0 0.70 mAdc mAdc Collector Cutoff Current [ VCE = 100 Vdc, VBE(off) = 1.5 Vdc ] ICEV 5.0 mAdc Emitter-Base Cutoff Current [ VBE = 7.0 Vdc , Ic = 0 ] IEBO 5.0 mAdc * ON CHARACTERISTICS (1): DC Current Gain [ Ic = 4.0 Adc , VCE = 4.0 Vdc ] [ Ic = 10 Adc , VCE = 4.0 Vdc ] Collector-Emitter Saturation Voltage [ Ic = 4.0 Adc , IB = 400 mAdc ] [ Ic = 10 Adc , IB = 3.3 Adc ] Base-Emitter on Voltage [ Ic = 4.0 Adc , VCE= 4.0. Vdc ] SECOND BREAKDOWN Second Breakdown Collector current With Base Forward Biased [VCE=30 Vdc, t = 1.0 s Nonrepetitive] DYNAMIC CHARACTERISTICS : Current Gain - Bandwidth Product [ Ic = 0.5Adc , VCE=10 Vdc , f=1.0 MHz ] Small Signal Current Gain [ IC= 1.0 Adc, VCE=4.0 Vdc, f=1.0kHz] * hFE 20 5.0 70 VCE(sat) 1.1 3.0 VBE(on) Vdc Vdc 1.8 1s/b 3 Adc fT 2.5 MHz hfe 15 (1) Pulse Test : Pulse Width <300s , Duty Cycle < 2.0%