SILICON POWER TRANSISTOR
PNP TIP2955
15A 90W
Technical Data
…designed for general-purpose switching and amplifier application.
F DC Current Gain - h FE = 20 – 70 @ IC = 4Adc
F Collector-Emitter Saturation Voltage – VCE(sat) = 1.1 Vdc (Max) @ IC = 4Adc
F Excellent Safe Operating Area
F TO-218 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V CEO 60 Vdc
Collector- Emitter Voltage V CER 70 Vdc
Collector – Base Voltage V CB 100 Vdc
Emitter Base Voltage V EB 7 Vdc
Collector Current – Continuos I C 15 Adc
Base Current – Continuos I B7 Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°CPD 90
0.72 Watts
W/°C
Operating and Storage junction
Temperature Range Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max. Unit
Thermal resistance junction to case R thjc 1.39 °C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =30 mAdc, IB = 0 ] V
CEO(sus)
60 Vdc
Collector Cutoff Current
[ VCE = 70 Vdc, RBE= 100ohms ] ICER 1.0 mAdc
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ] ICE0 0.70 mAdc
Collector Cutoff Current
[ VCE = 100 Vdc, VBE(off) = 1.5 Vdc ] ICEV 5.0 mAdc
Emitter-Base Cutoff Current
[ VBE = 7.0 Vdc , Ic = 0 ] IEBO 5.0 mAdc
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 4.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 10 Adc , VCE = 4.0 Vdc ]
hFE 20
5.0 70
Collector-Emitter Saturation Voltage
[ Ic = 4.0 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
VCE(sat) 1.1
3.0 Vdc
Base-Emitter on Voltage
[ Ic = 4.0 Adc , VCE= 4.0. Vdc ] VBE(on) 1.8 Vdc
SECOND BREAKDOWN
Second Breakdown Collector current
With Base Forward Biased
[VCE=30 Vdc, t = 1.0 s Nonrepetitive]
1s/b 3 Adc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[ Ic = 0.5Adc , V
CE=10 Vdc , f=1.0 MHz ]
fT2.5 MHz
Small Signal Current Gain
[ IC= 1.0 Adc, VCE=4.0 Vdc, f=1.0kHz] hfe 15
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
