Xo02.53 2N4300 2 AMP SSDI HIGH SPEED NPN TRANSISTOR = {is ticacs, ater ssss P. O. Box 577 1 0O VOLTS La Mirada, California 90637 (213) 921-9660 TWX 910-583-4807 CASE STYLE W JEDEC TO-5 FEATURES | 330 @ RADIATION TOLERANT 320 e FAST SWITCHING, 130 NSEC MAX ton 260 e HIGH FREQUENCY, TYPICAL f T 100 MHZ ive e BVCEO 80 VOLTS MIN, scans e LOW SATURATION VOLTAGE 019 035 e 200C OPERATING, GOLD EUTECTIC DIE ATTACH | | DESIGNED FOR COMPLEMENTARY USE WITH 2N5333 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage Veeo 80 Volts Collector - Base Voltage Vopo 100 Volts Emitter - Base Voltage Veno 8 Volts Collector Current Ic 2 Amps Base Current Ig l Amps Total Device Dissipation @ TC =100 C Pp 15 Watts Derate above . 100 C 150 mw/C Operating and Storage Temperature Tj, Tstg L65 to +200 C THERMAL CHARACTERISTICS Characteristics ; Symbol Value Unit Therma! Resistance, Junction to Case ROJC 6.66 C/W ELECTRICAL CHARACTERISTICS Characteristics , Symbol Min. Max. Unit Collector - Emitter Breakdown Voitage* (Ip = 30 m Adc) BVceQ: 80 Vde Collector - Base Breakdown Voltage Vde (ig= 200 u Ade) 8YcB0 100 Emitter - Base Breakdown Voltage (Ig = 200 uAdc) . : , BVeag 8 Vde 1/85 B176G NOTE: All specifications subject to change without notice.ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector Cutoff Current TA= 259 I 10 Ade (Vck= 90 Vdc) TC = 150C CES 75 Collector Cutoff Current (VcE= 40 Vdc) IcEO 1 u Adc Emitter Cutoff Current I 0.5 | Vep= 5 Vdc) EBO u Adc (Vpp= 8 Vdc) 10 DC Current Gain* (Ip = 1 Adc, Vee = 2 Vdc) h 30 120 2 _ 2 FE* (Ic = Adc, Voge = Vde) 15 Collector - Emitter Saturation Voltage (Ip = 1 mAdc, Ip = 100m Adc) Veg (san: 0.3 Vde (ig= 2 Adc, 1g = 200 m Adc) 0.5 Base ~- Emitter Voltage* (lp = 2 Ad. Vcp= 2 Vdc) Vee (ON) * 1.2 Vde Current - Gain - Bandwith Product , fy MHz (Ic = 1 Adc, Vee = 10 Vde. f = 15 Mhz) 30 Output Capacitance | f (Wop = 30) Vee. Ip = 0.f= 1 MHz) ob 45 / P Input Capacitance _ f (Vpe = 8 Vdc.ig=0.f= 1 MHZ) ip 225 Delay Time | (Voc= 20 Vdc. ee In = Ad (t_) + Rise Time C 1 C, on tr 130 ns Storage Time Vep(off) = 3.7 Vdc, (t ) ts. Fall Time Is} = po = 100 mAdc, R= 20 Ohms) off 4 * 1.5 us *Pulse Test: Pulse width = 300 us, DutyCycle = 2% FORWARD BIAS DC SAFE OPERATION AREA (S.0.A. CURVE) TYPICAL OPERATING CURVES CURVES APPLY BELOW RATED Vig T, 25C DISSIPATION DERATING CURVE 4 5 100 t,7 0.3 ms, d= 0.1 4 5 i 2 2 5 < td 3 B 07 6 , \ 3 ? 0 \ 0.4 \ B 02 is N So = 4 0.07 0 0.04 23 7 100 125 1380 175 200 T. Cote Temperoture"C P.O. Box 577, La Mirada, California 90637 0.02 0.01 70 100 40 SSDIl SOLID STATE DEVICES, INC. 4 7 10 20 Telephone: (213) 921-9660 TWX 910-583-4807