© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1Publication Order Number:
NTNS3A65PZ/D
NTNS3A65PZ
Small Signal MOSFET
−20 V, −281 mA, Single P−Channel,
SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm
Package
Features
•Single P−Channel MOSFET
•Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
Extremely Thin Environments Such as Portable Electronics
•Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
•1.5 V Gate Drive
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•High Side Switch
•High Speed Interfacing
•Optimized for Power Management in Ultra Portable Solutions
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS −20 V
Gate−to−Source Voltage VGS ±8 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°CID−281 mA
TA = 85°C−202
t ≤ 5 s TA = 25°C−332
Power Dissipation
(Note 1)
Steady
State
TA = 25°C PD155 mW
t ≤ 5 s 218
Pulsed Drain
Current
tp = 10 msIDM −842 mA
Operating Junction and Storage
Temperature
TJ, TSTG −55 to
150
°C
Source Current (Body Diode) (Note 2) IS−130 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using the minimum recommended pad size,
or 2 mm2, 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
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V(BR)DSS RDS(on) MAX ID Max
−20 V
1.3 W @ −4.5 V
2.0 W @ −2.5 V
−281 mA
Device Package Shipping†
ORDERING INFORMATION
NTNS3A65PZT5G SOT−883
(Pb−Free)
8000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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MARKING
DIAGRAM
SOT−883 (XDFN3)
CASE 506CB
65 = Specific Device Code
M = Date Code
65 M
S (2)
D (3)
G (1)
P−CHANNEL MOSFET
21
3
3.4 W @ −1.8 V
4.5 W @ −1.5 V
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2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3) RθJA 804
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 3) RθJA 574
3. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = −250 mA, ref to 25°C11 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = −20 V
TJ = 25°C−1mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±5 V ±10 mA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−0.4 −1.0 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ2.2 mV/°C
Drain−to−Source On Resistance RDS(on)
VGS = −4.5 V, ID = −200 mA 0.9 1.3
W
VGS = −2.5 V, ID = −100 mA 1.3 2.0
VGS = −1.8 V, ID = −50 mA 1.8 3.4
VGS= −1.5 V, ID = −10 mA 2.3 4.5 W
Forward Transconductance gFS VDS = −5 V, ID = −200 mA 0.58 S
Source−Drain Diode Voltage VSD VGS = 0 V, IS = −100 mA −0.8 −1.2 V
CHARGES & CAPACITANCES
Input Capacitance CISS
VGS = 0 V, freq = 1 MHz, VDS = −10 V
44
pF
Output Capacitance COSS 6.7
Reverse Transfer Capacitance CRSS 5.5
Total Gate Charge QG(TOT)
VGS = −4.5 V, VDS = −10 V;
ID = −200 mA
1.1
nC
Threshold Gate Charge QG(TH) 0.1
Gate−to−Source Charge QGS 0.2
Gate−to−Drain Charge QGD 0.2
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4)
Turn−On Delay Time td(ON)
VGS = −4.5 V, VDD = −10 V,
ID = −200 mA, RG = 2 W
18
ns
Rise Time tr32
Turn−Off Delay Time td(OFF) 178
Fall Time tf84
4. Switching characteristics are independent of operating junction temperatures
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3
TYPICAL CHARACTERISTICS
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
−50 −25 0 25 50 75 100 125 150
VGS = −4.5 V
ID = −200 mA
VGS = −1.8 V
ID = −50 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Figure 1. On−Region Characteristics
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
VGS = −4.5
TJ = 25°C
−4.0 V
−3.5 V
−3 V
−2.5 V
−2 V
−1.8 V
−1.5 V
−1.2 V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
00.511.522.53
Figure 2. Transfer Characteristics
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
TJ = 25°C
TJ = 125°C
TJ = −55°C
VDS = −5 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
TJ = 25°C
ID = −200 mA
Figure 3. On−Resistance vs. Gate Voltage
−VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
VGS = −2.5 V
VGS = −4.5 V
VGS = −1.5 V
VGS = −1.8 V
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
RDS(on), DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
10
100
1000
2 4 6 8 10 12 14 16 18 20
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−IDSS, LEAKAGE (nA)
VGS = 0 V
TJ = 125°C
TJ = 85°C
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4
TYPICAL CHARACTERISTICS
0.90
−50 −25 0 25 50 75 100 125 150
ID = −250 mA
0.80
0.70
0.60
0.50
0.40
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
02468101214161820
Figure 7. Capacitance Variation
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
1
2
3
4
5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Figure 8. Gate−to−Source Voltage vs. Total
Charge
Qg, TOTAL GATE CHARGE (nC)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
QT
Qgs Qgd
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VDS
VGS
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (W)
t, TIME (ns)
VDD = −10 V
VGS = −4.5 V
td(off)
td(on)
tf
tr
0.1
1.0
10.0
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.
3
Figure 10. Diode Forward Voltage vs. Current
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
−IS, SOURCE CURRENT (A)
TJ = 25°C
TJ = 125°C
TJ = −55°C
TJ, STARTING JUNCTION TEMPERATURE (°C)
−VGS(th) (V)
Figure 11. Threshold Voltage
0.001
0.010
0.100
1.000
0.1 1 10 10
0
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
VGS ≤ −8 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
10 ms
VDS = −10 V
ID = −0.2 V
TJ = 25°C
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5
TYPICAL CHARACTERISTICS
900
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 13. Thermal Response
PULSE TIME (sec)
R(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
0.1
Duty Cycle = 0.5
0.2
0.05
0.02
0.01
Single Pulse
800
700
600
500
400
300
200
100
0
RqJA steady state = 804°C/W
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6
PACKAGE DIMENSIONS
ÉÉÉ
SOT−883 (XDFN3), 1.0x0.6, 0.35P
CASE 506CB
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. EXPOSED COPPER ALLOWED AS SHOWN.
A B
E
D
BOTTOM VIEW
b
0.10 C
TOP VIEW
0.10 C
A
A1
0.10 C
0.10 C
CSEATING
PLANE
SIDE VIEW
DIM MIN MAX
MILLIMETERS
A0.340 0.440
A1 0.000 0.030
b0.075 0.200
D2 0.620 BSC
e0.350 BSC
L0.170 0.300
SOLDER FOOTPRINT*
DIMENSIONS: MILLIMETERS
1.10
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
1
L
0.43
RECOMMENDED
D0.950 1.075
E0.550 0.675
E2 0.425 0.550
A
M
0.10 BC
M
0.05 C
e
e/2
2X 3X
D2
E2
2X 0.41
0.55
0.20
2X PACKAGE
OUTLINE
PIN ONE
REFERENCE
NOTE 3
3X
1
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