PD - 91853C Si4410DY HEXFET(R) Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS(on) = 0.0135 T o p V ie w Description This N-channel HEXFET(R) Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C dv/dt EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units 30 10 8.0 50 2.5 1.6 0.02 5.0 400 20 -55 to + 150 V W/C V/ns mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 11/22/99 Si4410DY Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.029 --- V/C Reference to 25C, ID = 1mA 0.010 0.0135 VGS = 10V, ID = 10A 0.015 0.020 VGS = 4.5V, ID = 5.0A --- --- V VDS = VGS, ID = 250A 35 --- S VDS = 15V, ID = 10A --- 1.0 VDS = 30V, VGS = 0V A --- 25 VDS = 30V, VGS = 0V, TJ = 55C --- -100 VGS = -20V nA --- 100 VGS = 20V 30 45 ID = 10A 5.4 --- nC VDS = 15V 6.5 --- VGS = 10V, See Fig. 10 11 --- VDD = 25V 7.7 --- ID = 1.0A ns 38 --- RG = 6.0 44 --- RD = 25, 1585 --- VGS = 0V 739 --- pF VDS = 15V 106 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units --- --- 2.3 --- --- 50 --- --- 0.7 50 1.1 80 A V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.3A, VGS = 0V TJ = 25C, IF = 2.3A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on FR4 Board, t 10 sec 2 Starting TJ = 25C, L = 8.0mH RG = 25, IAS = 10A. (See Figure 15) ISD 2.3A, di/dt 130A/s, VDD V(BR)DSS, TJ 150C www.irf.com Si4410DY 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 4.5V 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 4.5V 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) TJ = 2 5 C TJ = 1 5 0 C 100 V DS = 25V 2 0 s P U L S E W ID TH 4 8 12 V G S , G a te-to-Sou rce Volta ge (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 10 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = -5 5 C 20s PULSE WIDTH TJ = 150 C 10 0.1 100 VDS , Drain-to-Source Voltage (V) I D , D rain-to -S o u rce C urre n t (A ) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 16 A 10A ID = 11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 Si4410DY VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2000 Ciss 1600 1200 Coss 800 400 20 ID = 10A VDS = 24V VDS = 15V VGS , Gate-to-Source Voltage (V) 2400 16 12 8 4 Crss 0 1 10 0 100 0 10 VDS , Drain-to-Source Voltage (V) 20 30 40 50 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 10 100 TJ = 150 C TJ = 25 C 1 10us 100us 10 1ms 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 1.0 TC = 25 C TJ = 150 C Single Pulse 1 0.1 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com Si4410DY 8.0 80 P ower ( W ) 100 I D , Drain Current (A) 10.0 6.0 4.0 60 40 20 2.0 0.0 25 50 75 100 125 TC , Case Temperature 150 0 0.01 A 0.1 1 ( C) 10 100 T im e (sec ) Fig 10. Typical Power Vs. Time Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.20 0.16 0.12 0.08 V G S = 10V V G S = 4.5V 0.04 0.00 A 0 10 20 30 40 50 R D S (on ) , Drain-to-S ource On Resistance () R D S(on ) , D rain-to-S ource O n Resistance () Si4410DY 0.03 0.02 I D = 10A 0.01 0.00 3 Fig 12. Typical On-Resistance Vs. Drain Current 6 7 8 9 1000 EAS , Single Pulse Avalanche Energy (mJ) 2.5 I D =2 50A 2.0 1.5 A -60 -40 -20 0 20 40 60 80 100 120 10 A Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 V G S (th) , V arian ce ( V ) 5 V G S , G ate-to- Sou rc e V oltage (V ) I D , D rain C urren t (A ) 140 160 T J , Jun ction T em peratu re (C ) Fig 14. Typical Threshold Voltage Vs.Temperature 6 4 TOP 800 BOTTOM ID 4.5A 8.0A 10A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 15. Maximum Avalanche Energy Vs. Drain Current www.irf.com Si4410DY SO-8 Package Outline DIM D -B- 5 8 7 6 5 H E -A- 1 2 3 e 6X 0.25 (.010) 4 M A M K x 45 e1 A -C- 0.10 (.004) B 8X 0.25 (.010) A1 L 8X 6 M C A S B S C 8X INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 5 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.27 8 0 8 0 6.20 RECOMMENDED FOOTPRINT NOTES: 0.72 (.028 ) 8X 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6.46 ( .255 ) 1.78 (.070) 8X MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X SO-8 Part Marking Information www.irf.com 7 Si4410DY SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. 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