BAW56
350mW 75Volt
Dual Switching Diode
SOT-23
Suggested Solder
Pad Layout
Features
• Low Current Leakage
• Low Cost
• Small Outline Surface Mount Package
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A.110 .120 2.80 3.04
B.083 .098 2.10 2.64
C.047 .055 1.20 1.40
D.035 .041 .89 1.03
E.070 .081 1.78 2.05
F.018 .024 .45 .60
G.0005 .0039 .013 .100
H.035 .044 .89 1.12
J.003 .007 .085 .180
K.015 .020 .37 .51
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage VR
75V
Average Rectified
Output Current IO
150mA
Power Dissipation PTOT 350mW
Peak Forward Surge
Current IFSM
1.0A t=1s,Non-Repetitive
Maximum
Instantaneous
Forward Voltage VF855mV IFM = 10mA;
TJ = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR2.5µA
50µA
VR=75Volts
TJ = 25°C
TJ = 150°C
Typical Junction
Capacitance CJ2pF Measured at
1.0MHz, VR=0V
Reverse Recovery
Time Trr
4nS IF=10mA
VR = 0V
RL=500Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.900
.037
.950
.037
.950
A 1
A
C C
Pin Configuration
Top View
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MCC
BAW56
www.mccsemi.com
MCC
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F