FDC640P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). * -4.5 A, -20 V RDS(ON) = 0.053 @ VGS = -4.5 V RDS(ON) = 0.080 @ VGS = -2.5 V * Rugged gate rating (12V) * Fast switching speed Applications * High performance trench technology for extremely low RDS(ON) * Battery management * Load switch * Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter -20 V VGSS Gate-Source Voltage 12 V ID Drain Current -4.5 A - Continuous (Note 1a) - Pulsed PD -20 Maximum Power Dissipation TJ, TSTG (Note 1a) 1.6 (Note 1b) 0.8 W -55 to +150 C (Note 1a) 78 C/W (Note 1) 30 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .640 FDC640P 7'' 8mm 3000 units 2001 Fairchild Semiconductor International FDC640P Rev E(W) FDC640P January 2001 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -14 mV/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -12 V, VDS = 0 V -100 nA On Characteristics -20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A, Referenced to 25C 3 0.039 0.062 0.053 ID(on) On-State Drain Current VGS = -4.5 V, ID = -4.5 A ID = -3.6 A VGS = -2.5 V, VGS = -4.5 V, ID = -4.5A,TJ=125C VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -4.5 A VDS = -10 V, f = 1.0 MHz V GS = 0 V, -0.6 -1.0 -1.5 V mV/C 0.053 0.080 0.077 -20 A 16 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 890 pF 244 pF 123 pF (Note 2) 12 22 9 18 ns Turn-Off Delay Time 24 38 ns tf Turn-Off Fall Time 13 23 ns Qg Total Gate Charge 9 13 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, VDS = -10 V, VGS = -4.5 V ID = -1 A, RGEN = 6 ID = -4.5 A, ns 2 nC 3 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.7 -1.3 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78C/W when mounted on a 1in2 pad of 2oz copper on FR-4 board. b. 156C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDC640P Rev E(W) FDC640P Electrical Characteristics FDC640P Typical Characteristics 3 15 -3.0V -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -2.5V 12 9 6 -2.0V 3 VGS = -2.0V 2.5 2 -2.5V 1.5 -3.0V -3.5V 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.16 1.5 ID = -2.25 A ID = -4.5 A VGS = -4.5 V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 0.5 0 1.3 1.2 1.1 1 0.9 0.8 0.7 0.14 0.12 0.1 TA = 125oC 0.08 0.06 TA = 25oC 0.04 0.02 -50 -25 0 25 50 75 100 125 150 1.5 2 o 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 VDS = -5V TA = -55oC -IS, REVERSE DRAIN CURRENT (A) 12 25oC 10 -ID, DRAIN CURRENT (A) -4.0V 1 125oC 8 6 4 2 VGS = 0V 1 TA = 125oC 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC640P Rev E(W) FDC640P Typical Characteristics 1200 VDS = -5V ID = -4.5A -10V -15V 3 2 1 CISS 800 600 400 COSS 200 CRSS 0 0 0 2 4 6 8 10 0 12 5 Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 5 100s RDS(ON) LIMIT 1ms 10ms 100ms 10 1s 1 10s DC VGS = -4.5V SINGLE PULSE RJA = 156oC/W 0.1 TA = 25oC 0.01 SINGLE PULSE RJA = 156C/W TA = 25C 4 3 2 1 0 0.1 1 10 100 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) -ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 1000 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 156C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b Transient thermal response will change depending on the circuit board design. FDC640P Rev E(W) SuperSOTTM-6 Tape and Reel Data SSOT-6 Packaging Configuration: Figur e 1.0 Packaging Description: Customize Label SSOT-6 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. Anti static Cover Tape These full reels are individually barcode labeled and placed inside a pizza box (illustrated in figure 1.0) made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains three reels maximum. And these pizza boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. F63TNR Label Embossed Carrier Tape 631 631 631 631 631 SSOT-6 Packaging Information Packaging Option Standard (no f l ow c ode ) Pin 1 D87Z SSOT-6 Unit Orientation Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 10,000 Reel Size 7" Dia 13" 184x187x47 343x343x64 Max qty per Box 9,000 30,000 Weight per unit (gm) 0.0158 0.0158 Weight per Reel (kg) 0.1440 0.4700 Box Dimension (mm) 343mm x 342mm x 64mm Intermediate box fo r D87Z Option F63TNR Label Note/Comments F63TNR Label F63TNR Label sa mpl e 184mm x 187mm x 47mm Pizza Box fo r Standar d Opti on F63TNR Label LOT: CBVK741B019 QTY: 3000 FSID: FDC633N SPEC: D/C1: D9842 D/C2: SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Comp onent s Traile r Tape 300mm mi nimum or 75 empty poc kets (c)2000 Fairchild Semiconductor International Lead er Tape 500mm mi nimum or 125 emp ty poc kets August 1999, Rev. C SuperSOTTM-6 Tape and Reel Data, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-6 (8mm) 3.23 +/-0.10 3.18 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.37 +/-0.10 0.255 +/-0.150 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). Wc 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 5.2 +/-0.3 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-6 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 4.00 100 0.331 +0.059/-0.000 8.4 +1.5/0 0.567 14.4 0.311 - 0.429 7.9 - 10.9 8mm 7" Dia 7.00 177.8 8mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) July 1999, Rev. C SuperSOTTM-6 Package Dimensions SuperSOT-6 (FS PKG Code 31, 33) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G