GaAs IRED & PHOTO-THYRISTOR TLP541 G, 5AIG Unit in mm PROGRAMMABLE CONTROLLERS. 6 5 4 AC-OUTPUT MODULE. Pf TtHPSaia SOLID STATE RELAY. a 7 t 12 8 7.1220.25 7.6240.25 The TOSHIBA TLP541G consists of a photo-thyristor | a] a optically coupled to a gallium arsenide infrared 12 oy z emitting diode in a six lead plastic DIP package. 0.5 Le o.2sr8de, The TOSHIBA TLP542G consists of a photo-thyristor 2.544025 | 285~s20 | optically coupled to a gallium arsenide infrared JEDEc - emitting diode in a seven lead plastic DIP package. EIAJ _ TOSHIBA 11-7Al TLP542G * Peak Off-State Voltage: 400V Min. * Trigger LED Current : 7mA Max. * On-State Current : 150mA Max. 7.622025 * Isolation Voltage : 2500Vrms Min. * UL Recognized : File No. E67349 0257845 7.85~ 880 JEDEC - EIAdJ - TOSHIBA 11-1001 PIN CONFIGURATIONS i6res VIEW) TLP541G TLP5426 1 7 1 6 zq 4 Fa eh oft a afl I+ ef] Ss 1: ANODE 1: NC 2: CATHODE 2: ANODE 3: NC 3: CATHODE 4: CATHODE 4: HC 5: ANODE 5: GATE 6: GATE 6: CATHODE 7: ANODE 329 TLP541G, 542G HAXIMUM RATING (Ta=25C) CHARACTERISTIC SQMBOL RATING UNIT Forward Current Ip 70 mA Forward Current Derating (Ta225C) Alp/c -0.7 mA/C = Peak Forward Current (100us pulse, 100pps) Ipp 1 A Reverse Voltage VR 5 Vv Junction Temperature T; 125 C Peak Forward Voltage (Rgy=27K2) VDRM 400 Vv Peak Reverse Voltage (Rox=27K2) VRRM 400 v x On-State Current T? (RMS) 150 mA 8 On-State Current Derating (Taz25C) AIp/PC -2.0 mA/C ia Peak One Cycle Surge Current Ism 2 A Peak Reverse Gate Voltage Vom -5 Vv Junction Temperature Tj 100 c Storage Temperature Range Tstg -550125 C Operating Temperature Range Topr ~30.100 c Lead Soldering Temperature (10sec.) Tsold 260 C Isolation Voltage (AC, 1 min, RHS602) BVs 2500 Vems 330 TLP5416, 542G INDIVIOUAL ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Forward Voltage VF IF=10mA 1.0 ]1.15 1.3 v a Reverse Current Ip VR=5V - - 10 LA Capacitance CT v=0, =1MHz - 30 - pF off-state Current Tome | eee eto Reverse Current rary | VkATAOOV Ta=25C | - 10 | 5000] nA ee GK=27k2 Ta=100C] - 1 | 100] pA & | On-State Voltage Vom LTM=100mA - | o.9] 1.3] Vv i Holding Current Ty RGK=27ka - 0.2 1 mA Off-State dv/dt dv/de | VAK=280V, RGK=27k2 5 10 - Vius = v=0, f=1MHz Capacitance Cj Anode to Gate - 20 - pF Gate to Cathode - 350 - COUPLED CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.}| TYP. | MAX. | UNIT Trigger LED Current IFT Vax=6V, Rox=27k 1 4 7 mA Turn-on Time Con Reeeotha - 10 - us Capacitance (Input to Output) Cs Vs=0, =1MHz - 0.8 - pF Isolation Resistance Rs Vg=500V, R.H.<602% - 1014). Q Isolation Voltage BYg AC, 1 minute 2500 - - |Vins RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL MIN. | TYP. | MAX. | UNIT Supply Voltage Vac - - 120 Vac Forward Current Ip 10 16 25 mA Operating Temperature Topr -30 - 85 c Gate to Cathode Resistance RGK - 27 33 kQ Gate to Cathode Capacity Cox - 0,01 0.1 uF 331 TLP541G, 5426 I7(RMS) Ta 250 e & ta = Gj 200 5 co oF oO 2 wy 150 = B es Be ao Ea & *2 100 tam BY, 3 B80 a 2 4 m < 0 -20 0 20 40 60 80 100. 120 -200 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) Ip Ve Irp DR 100 3 3 000 PULSE WIDTHS 1004s 50 < Ta=25 > 30 Z 1000 i & 500 a 10 as a Bo 300 eS ot z 3 =o Fy an 100 a o 1 ae 50 3 Os = ty 30 = . 38 = 03 a> & <9 10 & 3. 103 3 107%) 3 107)? 3 10 0.1 DUTY CYCLE RATIO Dp 0.6 0.8 10 1.2 14 L 18 FORWARD VOLTAGE Vp (V) 4Vp/4Ta _ IF Ipp _ Vrp -32 1000 500 -28 300 -2.4 100 50 30 -2.0 PULSE WIDTH S& 104s REPETITIVE FREQUENCY 3 = 100Hz Ta=25T -0.4 1 0.1 0.3 1 3 10 30 0.6 1 1. FORWARD CURRENT Ip (mA) PULSE FORWARD VOLTAGE Vrp (v) -08 PULSE FORWARD CURRENT Ipp (mA) FORWARD VOLTAGE TEMPERATURE COEFFICIENT 4Vp/4Ta (mV/C) 332 TURN-ON TIME toy, (p08) pp (mA) TRIGGER LED CURRENT In HOLDING CURRENT (mA) (Vi pa) OFF-STATE VOLTAGE dy /dt CRITICAL RATE OF RISE OF ton IF Ta = 26C RL# toon Vaas50V RGK = 10k 27k 10 20 30 40 FORWARD CURRENT Ip (mA) {pt - Ta Rok =10k2 27kN 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) ly Ta Rox = 10k2 27kO 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) dv/dt Cok Te = BBC VaK =400 = 27k 0.006 0.01 GATE-CATHODE CAPACITANCE CoK F) 6.003 CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE dv/dt (/ ps) TRIGGER LED CURRENT Ipp (mA) ly (mA) HOLDING CURRENT TLP541G, 542G dv/dt Rok Ta 28C VAK = 200 400V e So 1 a 6 10 30. 60 GATE-CATHODE RESISTANCE RoK (ki) Ipt - RGK Ta = 25C VAK =6V Ry, =1000 1 a 5 10 30. 60 100-200 GATE-CATIIODE RESISTANCE Rox (kt) In - RoK 01 1 3 5 GATE-CATHODE RESISTANCE RoK 10 30 60 =100 200 k0}