FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers. * -13 A, -30 V. RDS(ON) = 9 m @ V GS = -10 V RDS(ON) = 13 m @ V GS = - 4.5 V * Extended V GSS range (25V) for battery applications These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. * High performance trench technology for extremely low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D D * High power and current handling capability D SO-8 S S S G Absolute Maximum Ratings Symbol Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed PD 6 3 7 2 8 1 Ratings Units -30 V 25 -13 V A -50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ , TSTG 4 TA=25oC unless otherwise noted Parameter V DSS 5 W 1.0 -55 to +175 C (Note 1a) 50 C/W (Note 1) 25 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6679 FDS6679 13'' 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6679 Rev C (W) FDS6679 May 2001 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS BV DSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = -250 A V DS = -24 V, V GS = 0 V -1 A IGSSF Gate-Body Leakage, Forward V GS = -25 V, V DS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse V GS = -25 V, V DS = 0 V -100 nA -3 V On Characteristics -30 ID = -250 A, Referenced to 25C V -23 mV/C (Note 2) V DS = V GS , ID = -250 A ID = -250 A, Referenced to 25C V GS(th) V GS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance -1 -1.6 ID(on) On-State Drain Current V GS = -10 V, ID = -13 A V GS = -4.5 V, ID = -11 A V GS =-10 V, ID =-13 A, TJ =125C V GS = -10 V, V DS = -5 V gFS Forward Transconductance V DS = -5 V, ID = -13 A 44 S V DS = -15 V, f = 1.0 MHz V GS = 0 V, 3939 pF 972 pF 498 pF 5 7.3 10 9.5 mV/C 9 13 13 -50 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) V DD = -15 V, V GS = -10 V, 19 34 ns 10 20 ns Turn-Off Delay Time 110 176 ns Turn-Off Fall Time 65 104 ns 71 100 nC V DS = -15 V, V GS = -10 V ID = -1 A, RGEN = 6 ID = -13 A, 12 nC 15 nC Drain-Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward V GS = 0 V, IS = -2.1 A Voltage (Note 2) -0.7 -2.1 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 1in2 pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6679 Rev C(W) FDS6679 Electrical Characteristics FDS6679 Typical Characteristics 50 3 V GS = -10V -ID, DRAIN CURRENT (A) 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V -6.0V -3.5V -4.5V 30 -3.0V 20 10 -2.5V 0 V GS = -3.0V 2.6 2.2 1.8 -3.5V -4.0V 1.4 -5.0V -6.0V -10V 1 0.6 0 0.5 1 1.5 2 0 10 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.04 ID = -13A V GS = -10V ID = -7.0A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -I D, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 0.03 TA = 125o C 0.02 TA = 25 oC 0.01 0 -50 -25 0 25 50 75 100 125 150 175 2 2.5 T J, JUNCTION TEMPERATURE ( oC) 3 3.5 4 4.5 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 -I S, REVERSE DRAIN CURRENT (A) VDS = -5.0V 40 -ID, DRAIN CURRENT (A) -4.5V 30 20 T A = -125oC 10 25o C -55o C 0 V GS = 0V 10 T A = 125o C 1 25o C 0.1 -55o C 0.01 0.001 0.0001 1.5 2 2.5 3 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6679 Rev C(W) FDS6679 Typical Characteristics 6000 V DS = -5V ID = -13A -10V f = 1 MHz V GS = 0 V 5000 8 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 10 6 4 C ISS 4000 3000 2000 2 COSS 1000 CRSS 0 0 0 10 20 30 40 50 60 70 80 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 50 1ms 10ms R DS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100s 100ms 1s 10s 1 DC V GS = -10V SINGLE PULSE RJA = 125o C/W 0.1 TA = 25o C 0.01 0.1 1 10 SINGLE PULSE RJA = 125C/W T A = 25C 40 30 20 10 0 0.001 100 0.01 0.1 -V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) 10 -V D S, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R J A(t) = r(t) + R J A 0.2 0.1 o R J A = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - T A = P * R J A (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient t hermal response will change depending on the circuit board design. FDS6679 Rev C(W) SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. Embossed ESD Marking TION NS ATTEE NPRECAUTIO G RV HANDLIN OBSEFO IC R OSTAT ELECTR ITIVE SENS ES DEVIC Antistatic Cover Tape These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13" Dia - 13" Dia 7" Dia 355x333x40 530x130x83 355x333x40 193x183x80 Max qty per Box 5,000 30,000 8,000 2,000 Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 Reel Size Box Dimension (mm) SOIC-8 Unit Orientation Barcode Label Note/Comments Barcode Label Barcode Label 355mm x 333mm x 40mm Intermediate container for 13" reel option F63TNR Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 QTY: 2500 FSID: FDS9953A SPEC: D/C1: Z 9842AB D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Trailer Tape 640mm minimum or 80 empty pockets (c)2001 Fairchild Semiconductor Corporation Leader Tape 1680mm minimum or 210 empty pockets January 2001, Rev. C SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 5.30 +/-0.10 B0 6.50 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 E1 1.60 +/-0.10 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 - 0.606 11.9 - 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) January 2001, Rev. C SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2