BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
1
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDX34, BDX34A, BDX34B, BDX34C and
BDX34D
●70 W at 25°C Case Temperature
●10 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
VCBO
45
60
80
100
120
V
Collector-emitter voltage (IB = 0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
VCEO
45
60
80
100
120
V
Emitter-base voltage VEBO 5V
Continuous collector current IC10 A
Continuous base current IB0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 70 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2W
Operating free air temperature range TJ-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA-65 to +150 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 100 mA IB = 0 (see Note 3)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
45
60
80
100
120
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
IB=0
IB=0
IB=0
IB=0
IB=0
IB=0
IB=0
IB=0
IB=0
IB=0
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
0.5
0.5
0.5
0.5
0.5
10
10
10
10
10
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
TC = 100°C
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
1
1
1
1
1
5
5
5
5
5
mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 10 mA
hFE
Forward current
transfer ratio
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
IC=4 A
IC=4 A
IC=3 A
IC=3 A
IC=3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
750
750
750
750
750
VBE(on)
Base-emitter
voltage
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
VCE = 3 V
IC=4 A
IC=4 A
IC=3 A
IC=3 A
IC=3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
V
VCE(sat)
Collector-emitter
saturation voltage
IB = 8 mA
IB = 8 mA
IB = 6 mA
IB = 6 mA
IB = 6 mA
IC= 4 A
IC= 4 A
IC= 3 A
IC= 3 A
IC= 3 A
(see Notes 3 and 4)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
V
VEC
Parallel diode
forward voltage IE = 8 A IB = 0 4 V
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
3
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.78 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n ti m e I C = 3 A
VBE(off) = -3.5 V
IB(on) = 12 mA
RL = 10 Ω
IB(off) = -12 mA
tp = 20 µs, dc ≤ 2%
1µs
toff Turn-off time 5µs
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS130AF
TC = -40°C
TC = 25°C
TC = 100°C
VCE = 3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0 TCS130AH
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·5 1·0 10
VBE(sat) - Base-Emitter Saturation Voltage - V
0·5
1·0
1·5
2·0
2·5
3·0 TCS130AJ
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
5
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 4.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS130AB
