LESHAN RADIO COMPANY, LTD.
K4–1/4
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector–Emitter V oltage V CEO 65 45 30 V
Collector–Base V oltage V CBO 80 50 30 V
Emitter–Base V oltage V EBO 6.0 6.0 5.0 V
Collector Current — Continuous I C100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D150 mW
TA = 25°C
Thermal Resistance, Junction to Ambient R θJA 83 3 °C/W
Total Device Dissipation P D2.4 mW/°C
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
BC846 Series 65 — —
(IC = 10 mA) BC847 Series V (BR)CEO 45 — — v
BC848 Series 30 — —
Collector–Emitter Breakdown V oltage
BC846 Series 80 — —
(IC = 10 µA, VEB = 0) BC847 Series V (BR)CES 50 — — v
BC848 Series 30 — —
Collector–Base Breakdown V oltage BC846 Series 80 — —
(IC = 10 µA) BC847 Series V (BR)CBO 50 — — v
BC848 Series 30 — —
Emitter–Base Breakdown Voltage BC846 Series 6.0 — —
(IE = 1.0 µA) BC847 Series, V (BR)EBO 6.0 — — v
BC848 Series 5.0 — —
Collector Cutoff Current (VCB = 30 V) I CBO ——15nA
(VCB = 30 V, TA = 150°C) — — 5.0 µA
BC846AWT1,BWT1
BC847AWT1,BWT1
CWT1
BC848AWT1,BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 419–02, STYLE 3
SOT–323 /SC–70
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1.FR–5=1.0 x 0.75 x 0.062in
LESHAN RADIO COMPANY, LTD.
K4–2/4
BC846A WT1,BWT1 BC847A WT1,BWT1 CWT1 BC848A WT1,BWT1,CWT1
ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
BC846A, BC847A, BC848A
h FE —90——
(I
C
= 10 µA, V
CE
= 5.0 V) BC846B, BC847B, BC848B
— 150 —
BC847C, BC848C
— 270 —
(I
C
= 2.0 mA, V
CE
= 5.0 V) BC846A, BC847A, BC848A
110 180 220
BC846B, BC847B, BC848B
200 290 450
BC847C, BC848C
420 520 800
Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) — — 0.25 V
Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — — 0.6
Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) — 0.7 — V
Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) — 0.9 —
Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) 580 660 700 mV
Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) — — 770
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T100 — — MHz
(I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A NF dB
V CE = 5.0 Vdc, R S = 2.0 kΩ, BC846B, BC847B, BC848B — — 10
f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C — — 4.0
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain I C , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” V oltages
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
V CE = 10 V
T A = 25°C
2.0
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
T A = 25°C
V BE(sat) @ I C /I B=10
V BE(on) @ V CE = 10 V
V CE(sat) @ I C /I B = 10
T A = 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
θθ
θθ
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
1.0
1.2
1.6
2.0
2.4
2.8
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
VCE, COLLECTOR– EMITTER VOLTAGE (V)
I C= 200 mA
–55°C to +125°C
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
2.0
1.6
1.2
0.8
0.4
0
I C =
10 mA
I C = 100 mA
I C =
20 mA
I C = 50 mA
hFE, NORMALIZED DC CURRENT GAIN
0.2 1.0 10 100
0.02 0.1 1.0 10 20
LESHAN RADIO COMPANY, LTD.
K4–3/4
BC846A WT1, BWT1 BC847AWT1, BWT1, CWT1 BC848A WT1, BWT1, CWT1
BC847/BC848
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
I C , COLLECTOR CURRENT (mAdc)
Figure 6. Current–Gain – Bandwidth Product
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
T A = 25°C
V BE(sat) @ I C /I B = 10
VBE @ VCE = 5.0 V
V CE = 10V
T A = 25°C
T A = 25°C
V CE = 5V
T A = 25°C
VCE(sat) @ I C /I B= 10
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
θθ
θθ
θVB , TEMPERATURE COEFFICIENT (mV/°C)
hFE , DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
V, VOLTAGE (VOLTS)
I C =
10 mA
100mA
20mA 200mA
T A= 25°C
θ VB for V BE –55°C to 125°C
C ob
C ib
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
1.0
0.8
0.6
0.4
0.2
0
400
300
200
100
80
60
40
30
20
10.0
7.0
5.0
3.0
2.0
1.0
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
0
0.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.010 20 30 50
0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50mA
LESHAN RADIO COMPANY, LTD.
K4–4/4
BC846AWT1, BWT1 BC847A WT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1
BC846
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
C, CAPACITANCE (pF)
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
C ob
C ib
T A= 25°C V CE= 5 V
T A= 25°C
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100
40
20
10
6.0
4.0
2.0
500
200
100
50
20
