© 2018 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 175C 150 V
VDGR TJ= 25C to 175C, RGS = 1M150 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 110 A
IDM TC= 25C, Pulse Width Limited by TJM 300 A
IATC= 25C50 A
EAS TC= 25C 800 mJ
dV/dt IS IDM, VDD VDSS,TJ 175C 15 V/ns
PDTC= 25C 480 W
TJ-55 ... +175 C
TJM 175 C
Tstg -55 ... +175 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 150 V
VGS(th) VDS = VGS, ID = 250A 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 200 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 150C 150A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 11 13 m
TrenchT2TM HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA110N15T2
IXFP110N15T2
VDSS = 150V
ID25 = 110A
RDS(on)
13m
DS100093A(11/18)
Features
International standard packages
175°C Operating Temperature
High current handling capability
Fast intrinsic Rectifier
Dynamic dV/dt rated
Low RDS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor drives
Uninterruptible power supplies
High speed power switching
applications
Preliminary Technical Information
G = Gate D = Drain
S = Source Tab = Drain
TO-263
(IXFA)
G
S
D (Tab)
TO-220
(IXFP)
D (Tab)
S
GD
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA110N15T2
IXFP110N15T2
Symbol Test Conditions Characteristic Values
(TJ = 25C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 55A, Note 1 75 115 S
Ciss 8600 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 685 pF
Crss 77 pF
td(on) 33 ns
tr 16 ns
td(off) 33 ns
tf 18 ns
Qg(on) 150 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 nC
Qgd 46 nC
RthJC 0.31C/W
RthCH TO-220 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 110 A
ISM Repetitive, Pulse width limited by TJM 440 A
VSD IF = 100A, VGS = 0V, Note 1 1.3 V
trr 85 ns
IRM 6.8 A
QRM 290 nC
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3 (External)
IF = 55A, VGS = 0V
-di/dt = 100A/s
VR = 75V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
C2
A
H
1
b
D
E
D1
E1
b2
L2
L1
23
4
L3
A2
A1
e
ce
0
0.43 [11.0]
0.66 [16.6]
0.06 [1.6]
0.10 [2.5]
0.20 [5.0]
0.34 [8.7]
0.12 [3.0]
© 2018 IXYS CORPORATION, All rights reserved
IXFA110N15T2
IXFP110N15T2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
0246810121416
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
6V
7V
8V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
8V
7V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 55A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 110A
I
D
= 55A
Fig. 5. R
DS(on)
Normalized to I
D
= 55A Value
vs. Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 50 100 150 200 250 300
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 25
o
C
T
J
= 175
o
C
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA110N15T2
IXFP110N15T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 6.6
V
GS
- Volts
I
D
- Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
150
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 75V
I
D
= 55A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
25μs
100μs
1ms
10ms
100ms
R
DS(on)
Limit
T
J
= 175
o
C
T
C
= 25
o
C
Single Pulse
© 2018 IXYS CORPORATION, All rights reserved
IXFA110N15T2
IXFP110N15T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
14
15
16
17
18
19
20
55 60 65 70 75 80 85 90 95 100 105 110
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3Ω , V
GS
= 10V
V
DS
= 75V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
40
80
120
160
200
240
280
2 4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
90
t
d
(
on
)
- Nanoseconds
I
D
= 55A
I
D
= 110A
t
r
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 75V
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
16
18
20
22
24
26
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
20
30
40
50
60
70
80
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 75V
I
D
= 55A, 110A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
17
18
19
20
21
22
23
55 60 65 70 75 80 85 90 95 100 105 110
I
D
- Amperes
t
f
- Nanoseconds
20
30
40
50
60
70
80
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3.3Ω, V
GS
= 10V
V
DS
= 75V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
12
13
14
15
16
17
18
19
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3Ω , V
GS
= 10V
V
DS
= 75V
I
D
= 110A
I
D
= 55A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
10
50
90
130
170
210
250
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 75V
I
D
= 110A
I
D
= 55A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA110N15T2
IXFP110N15T2
IXYS REF: F_110N15T2(61)12-17-08
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.