2011-10-041
PZTA14
1
2
3
4
NPN Silicon Darlington Transistor
• For general AF applications
• High collector current
• High current gain
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
PZTA14 PZTA14 1=B 2=C 3=E 4=C - - SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCES 30 V
Collector-base voltage VCBO 30
Emitter-base voltage VEBO 10
Collector current IC300 mA
Peak collector current, tp ≤ 10 ms ICM 500
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 124 °C
Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 17 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-10-042
PZTA14
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 30 - - V
Collector-emitter breakdown voltage
IC = 100 µA, VBE = 0
V(BR)CES 30 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
10
µA
Emitter-base cutoff current
VEB = 10 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
hFE
10000
20000
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1.5 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VBEsat - - 2
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT125 - - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 3 - pF
1Pulse test: t < 300µs; D < 2%
2011-10-043
PZTA14
DC current gain hFE = ƒ(IC)
VCE = 5 V
10
EHP00719PZTA 13/14
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
0
10
EHP00720PZTA 13/14
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 1000
0
10
EHP00721PZTA 13/14
BEsat
V
3.0
0
3
10
Ι
C
mA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10
10
10
0 50 100 150
PZTA 13/14 EHP00718
TA
Ι
CB0
˚C
10
10
4
3
2
1
0
5
5
5
max
typ
nA
2011-10-044
PZTA14
Transition frequency fT = ƒ(IC)
VCE = 5 V, f = 200 MHz
10
EHP00717PZTA 13/14
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
55
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB/VEB
1
3
5
7
9
11
13
15
pF
19
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
150
300
450
600
750
900
1050
1200
1350
mW
1650
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00311PZTA 13/14
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
2011-10-045
PZTA14
Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5±0.2
A
4.6
2.3
0.7 ±0.1
0.25 MA
1.6±0.1
7
±0.3
B0.25 M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
2011-10-046
PZTA14
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
