TIP131, 132, 136, 137
Darlington Transistors
Page 1 31/05/05 V1.0
Features:
• Collector-Emitter sustaining voltage-
VCEO(sus) = 80V (Minimum) - TIP131, TIP136
= 100V (Minimum) - TIP132, TIP137
•Collector-Emitter saturation voltage -
VCE(sat) = 2.0V (Maximum) at IC= 4.0A
•Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case)
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
NPN PNP
TIP131 TIP136
TIP132 TIP137
8.0 Ampere
Darlington
Complementary Silicon
Power Transistors
80 - 100 Volts
70 Watts
TO-220
TIP131, 132, 136, 137
Darlington Transistors
Page 2 31/05/05 V1.0
MAXIMUM RATINGS
Characteristic Symbol TIP131
TIP136
TIP132
TIP137 Unit
Collector-Emitter Voltage VCEO
80 100
VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 5.0
Collector Current-Continuous
-Peak
IC
ICM
8.0
12 A
Base Current IB0.3 mA
Total Power Dissipation at TC= 25°C
Derate above 25°C PD70
0.56
W
W/°C
Operation and Storage Junction Temperature Range TJ, TSTG -65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.785 °C/W
Figure - 1 Power Derating
TIP131, 132, 136, 137
Darlington Transistors
Page 3 31/05/05 V1.0
Characteristic Symbol Minimum Maximum Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC= 30mA, IB= 0) TIP131, TIP136
TIP132, TIP137
VCEO(sus) 80
100
-V
Collector Cut off Current
(VCE = 40V, IB= 0) TIP131, TIP136
(VCE = 50V, IB= 0) TIP132, TIP137 ICEO -0.5
0.5
mA
Collector Cut off Current
(VCB = 80V, IE= 0) TIP131, TIP136
(VCB = 100V, IE= 0) TIP132, TIP137
ICBO -0.2
0.2
Emitter Cut off Current
(VEB = 5.0V, IC= 0) IEBO -5.0
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise noted)
DC Current Gain
(IC= 1.0A, VCE = 4.0V)
(IC= 4.0A, VCE = 4.0V)
hFE 500
1000 15,000 -
Collector-Emitter Saturation Voltage
(IC= 4.0A, IB= 16mA)
(IC= 6.0A, IB= 30mA)
VCE(sat) -2.0
3.0 V
Base-Emitter On Voltage
(IC= 4.0A, VCE = 4.0V) VBE(on) -2.5
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10V, IE= 0, f = 0.1MHz) Cob
-
250 pF
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
Internal Schematic Diagram
NPN
TIP131, TIP132
PNP
TIP136, TIP137
ON CHARACTERISTICS (1)
TIP131, 132, 136, 137
Darlington Transistors
Page 4 31/05/05 V1.0
Figure - 4 Collector-Emitter Saturation Voltage Figure - 5 Forward Voltage Commutating Diode
Figure - 2 DC Current Gain Figure - 3 Base-Emitter Voltage
TIP131, 132, 136, 137
Darlington Transistors
Page 5 31/05/05 V1.0
TYPE Part Number
NPN
TIP131
TIP132
PNP
TIP136
TIP137
Figure - 6 Active Region Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown safe operating area curves indicate IC-VCE limits
of the transistor that must be observed for reliable operation
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate.
The data of Figure - 6 curve is based on TJ(PK) = 150°C; TCis
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C.
At high case temperatures, thermal limitation will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Specifications
For enquiries from all other markets
TIP131, 132, 136, 137
Darlington Transistors
Page 6 31/05/05 V1.0
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