Ordering number: EN1599A ill fh 2S8A1317/28C3330 PNP/ NPN Epitaxial Planar Silicon Transistors AF Amp Applications Use : . Capable of being used in the low frequency to high freqency range. Features . . Large current capacity and wide ASO. ( ): 2881317 Absolute Maximus Ratings at Ta=25C . unit Collector to Base Voltage VoBo (-)60 V Collector to Emitter Voltage Vero (-)50 Vv Emitter to Base Voltage VeRO (-)6 V Collector Current Tc : (-)200 mA Collector Current (Pulse) Icp (-)400 mA Collector Dissipation * Pa 300 mW Junction Temperature oe 150 Storage Temperature Tstg -55 to +150 c Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current Ipg9 Vop2(-)40V, 1p =0 (-)0.1 4A Emitter Cutoff Current TERO Vep=(-)5V,I=0 (70.1, pA DC Current Gain Hee(1) Voge(-)6V,Ig=(~)1maA 100 800 (100) (560) DPE(2) Vop2(-)6V,Ig=(-)0.1mA 70 Gain-Bandwidth Product fr Vog=(-)6V, Ip=(-) 10mA 200 MHz Output Capacitance Cop Vope(-)6V,f=1MHz 3.0 pF ; (4.0) Continued on next page. * The 2SA1317/2S8C3330 are classified by 1mA hp, as follows: 2sa1317 [100 R 200] 140 S 280] 200 T 400| 280 U 560 | 2803330 [100 R 200 | 140 s 280[ 200 T 4oo{ 280 v 560 | 400 V 800) Case Outline 2033 (unit: mm) + 5.0 2.2 al 15. | rr] Po. tee te 2 | wm am [oc fil... = Lge f : Ss 0.4 SANYO: SPA B: Base C: Collector E: Emitter Specifications and information herein are subject to change without notice. | SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Uena, Taito-ku, TOKYO, 110 JAPAN Me 7997076 0015917 94? MM s-3197K/D054MW,TS No. 1599~1/3 4602SA1317/2SC3330 Continued from preceding page. Collector to Emitter Vor(sat) Saturation Voltage Base to Emitter VEBE(sat) Saturation Voltage Collector to Base VCBR)CBO Breakdown Voltage Collector to Emitter VBR)CEO- Breakdown Voltage Emitter to Base V(BR)EBO Breakdown Voltage Ic - Vce I = n 284131 Po=300nm t = rd 20-A- {5K ' > 10 5 Collector Current,I, ~ mA 6 =9 0 -10 - -30 -40 ~50 Collector to Emitter Voltage, Vor - Vv Ic - VBE : -240 (317 Vog=6v G -200}- Pulse -160 ~120 ' oe o Collector Current,I, - & o -0. -0.4 6 -0.8 -10 -1.2 Base to Emitter Voltage, Vpp - Vv hfe - I De Current Gain, bpp . & 8 ~ 2 a 0.072 ~ -1.0 Collector Current,I, ~ mA min typ max unit Ip=(~)100mA, (-)0.3 Ip=(-) 10mA Ig=(~)100mA, (=)1.0- Ip=(-)10mA To=(-) 102A, I,=0 (~)60 To=(~) 1mA, Rpp=oo (150 Tp=(=) 102 A, Ig=0 (=)6 is a 8 1 Collector Current,I, - mA Po G . 0 0 2a xn 40 50 Collector to Emitter Voltage , Vor -V 20 Ic - VBE 2803330 Vop=6v a 20 Pulse ; : HT 4 60 | f | 2 oO go oe 2 20 Rpts He 4 0 Ny 60 aE % Q - 3 40 ot aad V7) o 0 0.2 O4 0.6 0.8 1.0 1.2 Base to Emitter Voltage, Vopr - Vv hFE - IC Vop=6V 8 De Current Gain, bpp 8 O41 1.0 10 100 Collector Current,Ip - mA M 7997076 0015914 883 Vv Vv Vv V 4612SA1317/2SC3330 Collector to Emitter Saturation, 462 fr -l1 g Gain-Bandwidth Product,fp - MHz 8 - Ta9 2 - -7 4100 Collector Current,Ip - mA cob - VcB 4 = o Output Capacitance,c,,, - pF 2 i -10 7 -100 Collector to Base Voltage,Vop - Vv > 10 V - I 1317 a Ig/Ip=10 oN a a - > ~ -0.1 -0 01 1.0 T-190 -2 = 7-100 ~4 -3 = Collector Current,I, - mA 360 Po - T 28A 1317 28C3330 320 200 uO 200 160 - Nn So & s Collector Dissipation, Po - oW c-) Dn 0 Oo Mm 120 10 18 Ambient Temperature,Ta - C Gain-Bandwidth Product,f, - Miz 3 Collector to Emitter Saturation, Me 7997076 0015919 71T fT - Ic 8 10 100 Collector Current,Ip ~ mA cob - V f=) 3 Output Capacitance,c,, - pF a 1.0 ~ 40 Collector to Base Voltage, Von - V - I VCE(sat 2803330 Ig/Ig=10 Vog(sat) - } . OF 10 1m Collector Current,I, - mA AS 0 28A 1317728C3330 8 8 Collector Current,Ig - mA 3 or po 1,0 10 100 Collector to Emitter Voltage, Vor -vVCASE OUTLINES OF LEAD FORMED SMALL SIGNAL TRANSISTORS typical values. @ No marking is indicated. @ All of Sanyo lead formed small signal transistor case outlines are illustrated below. @ All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by 2.0 Case Outline 2003A/2003B (unit : mm) Case Outline 2019A/2019B (unit : mm) 2.0 0.44 2.0 0.46 tt pom 29 SE 29 3 Li) ~ 4 0.65 5. * 4.0 5.0 14.0 +] 40 JEDEC :TO-92 1: Source JEDEC 2702 1: Bmitter BIAS: SC-43 2: Gate EIAJ :SC-43 2: Collector SANYO :NP 3. Drain SANYO : NP 3: Base 74h . Case Outline 2004A (unit : mm) Case Outline 2033 (unit : mm) 0.44 2.2 + 3 >} 15.0 | Reds 2 rs 2p aq ., |-pe te m 492 wy FF =+4 ai j4 FE = [a | | 4 14.0 leo 1:Emitter * JEDEC :TO-92 1: Base 2: Collector BIAJ :SC-43 2: Emitter 3: Base SANYO : NP 3: Collector SANYO: SPA Case Outline 2005A (unit : mm) Case Outline 2034/2034A (unit : mm) 2.0 0.66 22 1.3 1.3 5.0 14.0 | 0.4 . 1: Source JEDEC :TO-92 1: Drain 2: Gate . EIAJ :SC-43 ; : Source 3: Drain . : : Gate SANYO : NP SANYO: SPA Case Outline 2006A (unit : mm) Case Outline 2040 (unit : mm) 22 3.0 0.5 pop wn Set | 2 it. b=2--f ( - {a we 4 a 42 1: Drain EIAJ :$C-61 1: Emitter 2: Source SANYO ; MP 2: Collector 3: Gate 3: Base SANYO: SPA Me 7997076 0015489 525 a 16Case Outline 2061 (unit : mm) 2.0 0.44 45 = _ bag = a 0.45 lho oa JEDEC :TO-92 : 1: Emitter EIAJ =: SC-43 2: Base SANYO : NP 3: Collector Case Outline 2064 (unit : mm) us 1 69 : ~ hd toe a qt} jos |S r2 3 hos. Ton Vou} 1: Emitter LOL Paty 2: CoHector | 3: Bose 2.94 254 SANYO: NMP Case Outline 2084A (unit:mm) __,, pre 10.5 LB I . 4 Lite tT }_afla.2 le 9.5. s i + | U tL to2 49 1: Emitter 2: Collector 3: Base 2.3 15) SANYO: FLP mm 7997076 0015490 240 17