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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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BDX53/A/B/C — NPN Epitax ial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BDX53/A/B/C Rev. B0 1
March 2011
BDX53/A/B/C
NPN Epitaxial Silicon Transistor
Applications
• Hammer Drivers, Audio Amplifiers Applications
• Power Liner and Switching Applications
Features
• Power Darlington TR
• Complement to BDX54, BDX54A, BDX54B and BDX54C respectively
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector -Base V oltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage : BDX53
: BDX53A
: BDX53B
: BDX53C
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 8 A
ICP *Collector Current (Pulse) 12 A
IB Base Current 0.2 A
PC Collector Dissipation (TC = 25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 to 150 °C
R2 0.3kΩ≅
1.Base 2.Collector 3.Emitter
1TO-220
Equivalent Circuit
B
E
C
R1 R2
R1 8.4kΩ≅
BDX53/A/B/C — NPN Epitax ial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BDX53/A/B/C Rev. B0 2
Electrical Characteristics TC = 25°C unless otherwise noted
* Pulse Test: PW=300μs, duty Cycle =1.5% Pulsed
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BDX53
: BDX53A
: BDX53B
: BDX53C
IC = 100mA, IB = 0 45
60
80
100
V
V
V
V
ICBO Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
200
200
200
200
μA
μA
μA
μA
ICEO Collector Cut-off Current : BDX53
: BDX53A
: BDX53B
: BDX53C
VCE = 22V, IB = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
500
500
500
500
μA
μA
μA
μA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 3A 750
VCE(sat) * Collector-Emitter Saturation Voltage IC = 3A, IB = 12mA 2 V
VBE(sat) * Base-Emitter Saturation Voltage IC = 3A, IB = 12mA 2.5 V
VF* Parallel Diode Forward Voltage IF = 3A
IF = 8A 1.8
2.5 2.5 V
V
BDX53/A/B/C — NPN Epitax ial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BDX53/A/B/C Rev. B0 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Damper Diode Forward Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
0.1 1 10
100
1000
10000
100000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
IC = 250IB
VBE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
IC = 250IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
VF(sat)[V], FORWARD VOLTAGE
IF[A], FORWARD CURRENT
1 10 100 1000
0.1
1
10
100
BDX53C
BDX53B
BDX53A
IC Max. (Continuous)
IC Max. (Pulsed)
BDX53
DC
100us
10us
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
PC[W], P OWER DISSIPATION
TC[oC], CASE TEMPERATURE
BDX53/A/B/C — NPN Epitax ial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BDX53/A/B/C Rev. B0 4
Physical Dimensions
4.50
±0.2
0
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.1
0
–0.0
5
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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