MBR2045CTW
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
IEC 61000-4-2, level 4 (ESD), >15KV (air)
MECHANICAL DATA
Case : TO-220AB molded plastic
Terminals: Lead Free Plating (Matte Tin Finish)
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
T
J
Operating Temperature Range
-55 to +175 ℃
T
STG
Storage Temperature Range
-55 to +175
Typical Thermal Resistance (Note 3)
R
0JC
2.0
/W
℃
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage (Note 1) V
Voltage Rate of Change (Rated VR)
T
J
=125℃
T
J
=25℃
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @ T
J
=125℃
dv/dt
0.65
0.57
0.84
0.72
I
R
@T
J
=100℃
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25℃0.02
5
mA
T
C
=125℃
V/us
MBR2045CTW
45
31.5
45
10000
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.40 15.20
10.67 9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 4.20
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64
0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1 32
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 45 Volts
FORWARD CURRENT - 20 Amperes
Typical Junction Capacitance
per element (Note 2)
C
J
300
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
pF
T
J
=25℃
SEMICONDUCTOR
LITE-ON
REV. 5, Jul-2012, KTHC91
℃
RATING AND CHARACTERISTIC CURVES
MBR2045CTW
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
(A)
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
CASE TEMPERATURE , ( )℃
25
75 100 125 150
5
0
50
20
175
15
0
10
RESISTIVE OR
INDUCTIVE LOAD
1 5 10 50 1002 20
0
25
50
75
100
125
150
8.3ms Single Half-Sine-Wave
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.001
0.1
1
100
10
60 80 100
TJ= 100 ℃
0.01
TJ= 25 ℃
TJ= 75 ℃
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , (V)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
TJ= 25℃
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , (V)
10
1100
10000
1000
100
0.1 4
TJ= 25 , f= 1MHz℃
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MBR2045CTW
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devices or systems without express written approval of LSC.
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