BDX33B BDX33C
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIP TION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plast ic package. They are intented
for use in power linear and swit ching applications.
The complementary PNP types are BDX34 B and
BDX34C respectively.
®
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
NPN BDX33B BDX33C
PNP BDX34B BDX34C
VCBO Collector-Base Voltage (IE = 0) 80 100 V
VCEO Collector-Emitter Voltage (IB = 0) 80 100 V
ICCollector Current 10 A
ICM Collector Peak Current 15 A
IBBase Current 0.25 A
Ptot Total Dissipation at Tc ≤ 25 oC70 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220
R1 Typ. = 10 KΩ R2 Typ. = 150 Ω
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case 1.78 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off Current
(IE = 0) for BDX33B/34B VCB = 80 V
for BDX33C/34C VCB = 100V
Tcase = 100 oC
for BDX33B/34B VCB = 80 V
for BDX33C/34C VCB = 100 V
0.2
0.2
5
5
mA
mA
mA
mA
ICEO Collector Cut-off Current
(IB = 0) for BDX33B/34B VCE = 40 V
for BDX33C/34C VCE = 50V
Tcase = 100 oC
for BDX33B/34B VCE = 40 V
for BDX33C/34C VCE = 50 V
0.5
0.5
10
10
mA
mA
mA
mA
IEBO Emitter Cut-off Current
(IC = 0) VEB = 5 V
5mA
V
CEO(sus)∗Collector-Emitter Sustaining
Voltage (IB = 0) IC =100 mA for BDX33B/34B
for BDX33C/34C 80
100 V
V
VCER(sus)∗Collector-emitter Sustaining
Voltage (RBE =100 Ω)IC = 100 mA for BDX33B/34B
for BDX33C/34C 80
100 V
V
VCEV(sus)∗Collector-emitter Sustaining
Voltage (VBE =-1.5 V) IC = 100 mA for BDX33B/34B
for BDX33C/34C 80
100 V
V
VCE(sat)∗Collector-emitter Saturation
Voltage IC = 3 A IB = 6 mA 2.5 V
VBE∗Base-emitter Voltage IC = 3 A VCE = 3 V 2.5 V
hFE∗DC Current Gain IC = 3 A VCE = 3 V 750 V
VF∗Parallel-Diode Forward
Voltage IF = 8 A 4 V
hfe Small Signal Current Gain IC = 1 A VCE = 5 V f = 1M Hz 100
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
BDX33B BDX33C BDX34B BDX34C
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHA NICAL D ATA
BDX3 3B BDX33 C BDX34B BDX34C
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BDX33B BDX33C BDX34B BDX34C
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