1
CD4041UBMS
CMOS Quad True/Complement Buffer
CD4041UBMS types are quad true/complement buffers con-
sisting of n- and p- channel units having low channel resis-
tance and high current (sourcing and sinking) capability. The
CD4041UBMS is intended for use as a buffer, line driver, or
CMOS-to-TTL driver. It can be used as an ultra-low power
resistor-network driver for A/D and D/A conversion, as a
transmission-line driver, and in other applications where high
noise immunity and low power dissipation are primary
design requirements.
The CD4041UBMS is supplied in these 14 lead outline pack-
ages:
Pinout CD4041UBMS
TOP VIEW
Features
• High Voltage Type (20V Rating)
• Balanced Sink and Source Current; Approximately 4
Times Standard “B” Drive
• Equalized Delay to True and Complement Outputs
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full
Package-Temperature Range;
- 100nA at 18V and +25oC
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specificationsfor Description of
‘B’ Series CMOS Devices”
Applications
• High Current Source/Sink Driver
• CMOS-to-DTL/TTL Converter Buffer
• Display Driver
• MOS Clock Driver
• Resistor Network Driver (Ladder or Weighted R)
• Buffer
• Transmission Line Driver
Functional Diagram
FIGURE 1. SCHEMATIC DIAGRAM 1 OF 4 BUFFERS
Braze Seal DIP H4Q
Frit Seal DIP H1B
Ceramic Flatpack H3W
E = A
F = A
A
G = B
H = B
B
VSS
VDD
D
N = D
M = D
C
L = C
K = C
1
2
3
4
5
6
7
14
13
12
11
10
9
8
A31
E
F = A
E = A 2F
B64
G
H = B
G = B 5H
C10 8 K
L = C
K = C 9L
D13 11M
N = D
M = D 12N
VSS = 7
VDD = 14
VDD
VSS
VDD VDD
VSS VSS
VDD
VSS
VDD
VSS
COMPLEMENT
OUTPUT
TRUE
OUTPUT
INPUT*
*ALL INPUTS PROTECTED
BY CMOS INPUT
PROTECTION NETWORK
P
N
Data Sheet December 1992 File Number 3309
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD). . . . . . . . . . . . . . . .-0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC
At Distance 1/16 ±1/32 Inch (1.59mm ±0.79mm) from case for
10s Maximum
Thermal Resistance. . . . . . . . . . . . . . . . θja θjc
Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W
Flatpack Package. . . . . . . . . . . . . . . . 70oC/W 20oC/W
Maximum Package Power Dissipation (PD) at +125oC
For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW
For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate
Linearity at 12mW/oC to 200mW
Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25oC-2µA
2 +125oC - 200 µA
VDD = 18V, VIN = VDD or GND 3 -55oC-2µA
Input Leakage Current IIL VIN = VDD or GND VDD = 20 1 +25oC -100 - nA
2 +125oC -1000 - nA
VDD = 18V 3 -55oC -100 - nA
Input Leakage Current IIH VIN = VDD or GND VDD = 20 1 +25oC - 100 nA
2 +125oC - 1000 nA
VDD = 18V 3 -55oC - 100 nA
Output Voltage VOL15 VDD = 15V, No Load 1, 2, 3 +25oC, +125oC, -55oC - 50 mV
Output Voltage VOH15 VDD = 15V, No Load (Note 3) 1, 2, 3 +25oC, +125oC, -55oC 14.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1 +25oC 1.6 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1 +25oC 5.0 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1 +25oC19-mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1 +25oC - -1.6 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1 +25oC - -6.4 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1 +25oC - -5.0 mA
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V 1 +25oC - -19 mA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25oC -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25oC 0.7 2.8 V
Functional F VDD = 2.8V, VIN = VDD or GND 7 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 20V, VIN = VDD or GND 7 +25oC
VDD = 18V, VIN = VDD or GND 8A +125oC
VDD = 3V, VIN = VDD or GND 8B -55oC
Input Voltage Low
(Note 2) VIL VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 1.0 V
Input Voltage High
(Note 2) VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V 1, 2, 3 +25oC, +125oC, -55oC 4.0 - V
Input Voltage Low
(Note 2) VIL VDD = 15V, VOH > 13.5V,
VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC - 2.5 V
Input Voltage High
(Note 2) VIH VDD = 15V, VOH > 13.5V,
VOL < 1.5V 1, 2, 3 +25oC, +125oC, -55oC 12.5 - V
NOTES: 1. All voltages referenced to device GND, 100% testing being im-
plemented.
2. Go/No Go test with limits applied to inputs.
3. Foraccuracy, voltage is measureddifferentiallyto VDD. Limit is
0.050V max.
CD4041UBMS
3
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1, 2) GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Propagation Delay TPHL
TPLH VDD = 5V, VIN = VDD or GND 9 +25oC - 120 ns
10, 11 +125oC, -55oC - 162 ns
Transition Time TTHL
TTLH VDD = 5V, VIN = VDD or GND 9 +25oC - 80 ns
10, 11 +125oC, -55oC - 108 ns
NOTES:
1. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
2. -55oC and +125oC limits guaranteed, 100% testing being implemented.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 5V, VIN = VDD or GND 1, 2 -55oC, +25oC- 1 µA
+125oC-30µA
VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA
+125oC-60µA
VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC- 2 µA
+125oC - 120 µA
Output Voltage VOL VDD = 5V, No Load 1, 2 +25oC, +125oC, -
55oC-50mV
Output Voltage VOL VDD = 10V, No Load 1, 2 +25oC, +125oC, -
55oC-50mV
Output Voltage VOH VDD = 5V, No Load 1, 2 +25oC, +125oC, -
55oC4.95 - V
Output Voltage VOH VDD = 10V, No Load 1, 2 +25oC, +125oC, -
55oC9.95 - V
Output Current (Sink) IOL5 VDD = 5V, VOUT = 0.4V 1, 2 +125oC 1.2 - mA
-55oC 2.1 - mA
Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC 3.5 - mA
-55oC 6.25 - mA
Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC13-mA
-55oC24-mA
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC - -1.2 mA
-55oC - -2.1 mA
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC - -4.6 mA
-55oC - -8.4 mA
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC - -3.5 mA
-55oC - -6.25 mA
Output Current (Source) IOH15 VDD =15V, VOUT = 13.5V 1, 2 +125oC - -13 mA
-55oC - -24 mA
Input Voltage Low VIL VDD = 10V, V OH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -
55oC-2V
Input Voltage High VIH VDD = 10V, VOH > 9V, VOL < 1V 1, 2 +25oC, +125oC, -
55oC8-V
Propagation Delay TPHL
TPLH VDD = 10V 1, 2, 3 +25oC - 70 ns
VDD = 15V 1, 2, 3 +25oC - 50 ns
CD4041UBMS
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Transition Time TTHL
TTLH VDD = 10V 1, 2, 3 +25oC - 40 ns
VDD = 15V 1, 2, 3 +25oC - 30 ns
Input Capacitance CIN Any Input 1, 2 +25oC - 22.5 pF
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial
design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1, 4 +25oC - 7.5 µA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1, 4 +25oC -2.8 -0.2 V
N Threshold Voltage
Delta ∆VTN VDD = 10V, ISS = -10µA 1, 4 +25oC-±1V
P Threshold Voltage VTP VSS = 0V, IDD = 10µA 1, 4 +25oC 0.2 2.8 V
P Threshold Voltage
Delta ∆VTP VSS = 0V, IDD = 10µA 1, 4 +25oC-±1V
Functional F VDD = 18V, VIN = VDD or GND 1 +25oC VOH >
VDD/2 VOL <
VDD/2 V
VDD = 3V, VIN = VDD or GND
Propagation Delay Time TPHL
TPLH VDD = 5V 1, 2, 3, 4 +25oC - 1.35 x
+25oC
Limit
ns
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit.
4. Read and Record
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC
PARAMETER SYMBOL DELTA LIMIT
Supply Current - MSI-1 IDD ± 0.2µA
Output Current (Sink) IOL5 ± 20% x Pre-Test Reading
Output Current (Source) IOH5A ± 20% x Pre-Test Reading
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Initial Test (Pre Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 1 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
Interim Test 2 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Interim Test 3 (Post Burn-In) 100% 5004 1, 7, 9 IDD, IOL5, IOH5A
PDA (Note 1) 100% 5004 1, 7, 9, Deltas
Final Test 100% 5004 2, 3, 8A, 8B, 10, 11
Group A Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11
Group B Subgroup B-5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroups 1, 2, 3, 9, 10, 11
Subgroup B-6 Sample 5005 1, 7, 9
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
LIMITS
UNITSMIN MAX
CD4041UBMS
5
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Group D Sample 5005 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.
TABLE 7. TOTAL DOSE IRRADIATION
CONFORMANCE GROUPS MIL-STD-883
METHOD
TEST READ AND RECORD
PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD
Group E Subgroup 2 5005 1, 7, 9 Table 4 1, 9, Deltas Table 4
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS
FUNCTION OPEN GROUND VDD 9V ± -0.5V
OSCILLATOR
50kHz 25kHz
Static Burn-In 1
(Note 1) 1, 2, 4, 5, 8, 9, 11,
12 3, 6, 7, 10, 13 14
Static Burn-In 2
(Note 1) 1, 2, 4, 5, 8, 9, 11,
12 7 3, 6, 10, 13, 14
Dynamic Burn-
In (Note 2) - 7 14 1, 2, 4, 5, 8, 9, 11,
12 3, 6, 10, 13
Irradiation
(Note 3) 1, 2, 4, 5, 8, 9, 11,
12 7 3, 6, 10, 13, 14
NOTE:
1. Each pin e xcept VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V
2. Each pin except VDD and GND will have a series resistor of 4.75K ±5%; VDD = 18V ± 0.5V
3. Each pin except VDD and GND will have a series resistor of 47K ±5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ±
0.5V
TABLE 6. APPLICABLE SUBGROUPS (Continued)
CONFORMANCE GROUP MIL-STD-883
METHOD GROUP A SUBGROUPS READ AND RECORD
Typical Performance Characteristics
FIGURE 2. TYPICAL OUTPUT LOW (SINK) CURRENT
CHARACTERISTICS FIGURE 3. MINIMUM LOW (SINK) CURRENT CHARACTERIS-
TICS
OUTPUT LOW CURRENT (IOL) (mA)
10V
5V
AMBIENT TEMPERATURE (TA) = +25oC
GATE-T O-SOURCE V OLTAGE (VGS) = 15V
0
20
10
30
40
50
DRAIN-T O-SOURCE V OLTAGE (VDS) (V)
12345 678
60
70
AMBIENT TEMPERATURE (TA) = +25oC
GATE-T O-SOURCE V OLTAGE (VGS) = 15V
5V
10V
OUTPUT LOW CURRENT (IOL) (mA)
0
20
10
30
40
50
DRAIN-T O-SOURCE V OLTAGE (VDS) (V)
12345 678
60
70
CD4041UBMS
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FIGURE 4. TYPICAL OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS FIGURE 5. MINIMUM OUTPUT HIGH (SOURCE) CURRENT
CHARACTERISTICS
FIGURE 6. TYPICAL PROPAGATION DELAY TIME vs LOAD
CAPACITANCE FIGURE 7. TYPICAL TRANSITION TIME vs LOAD
CAPACITANCE
FIGURE 8. MINIMUM AND MAXIMUM TRANSFER
CHARACTERISTICS - TRUE OUTPUT FIGURE 9. MINIMUM AND MAXIMUM TRANSFER
CHARACTERISTICS - COMPLEMENT OUTPUT
Typical Performance Characteristics (Continued)
AMBIENT TEMPERATURE (TA) = +25oC
-10
-20
-30
DRAIN-T O-SOURCE V OLTAGE (VDS) (V)
-40
-50
-60
0-2-4-6
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-T O-SOURCE V OLTAGE (VGS) = -5V
-10V
-15V
-1-3-5-7-8
-70 AMBIENT TEMPERATURE (TA) = +25oC
-10
-20
-30
DRAIN-T O-SOURCE V OLTAGE (VDS) (V)
-40
-50
-60
0-2-4-6
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
GATE-T O-SOURCE V OLTAGE (VGS) = -5V
-10V
-15V
-1-3-5-7-8
-70
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) (pF)
040608010
10
SUPPLY VOLTA GE (VDD) = 5V
PROPAGATION DELAY TIME (tPHL, tPLH) (ns)
10V
15V
20 30 50 70 90 100
20
30
40
50
60
70
80
AMBIENT TEMPERATURE (TA) = +25oC
LOAD CAPACITANCE (CL) (pF)
040608010
10
SUPPLY VOLTA GE (VDD) = 5V
TRANSITION TIME (tTLH, tTHL) (ns)
10V
15V
20 30 50 70 90 100
20
30
40
50
60
70
0 2 4 6 8 101214 1618
2
4
6
8
10
12
14
OUTPUT VOLTAGE (VO) (V)
VDD = 10V
VDD = 5V
VDD
= 3V
AMBIENT TEMP
(TA) = +25oC
VO
VI
INPUT VOLTAGE (VI) (V)
AMBIENT TEMPERATURE (TA) = +25oC
VI VO
SUPPLY VOLTAGE
(VDD) = 15V
10V
5V
OUTPUT VOLTAGE (VO) (V)
15.0
12.5
10.0
7.5
5.0
2.5
0 2.5 7.5 10 1512.5
INPUT VOLTAGE (VI) (V)
5.0
CD4041UBMS
7
Chip Dimensions and Pad Layout
FIGURE 10. TYPICAL POWER DISSIPATION vs INPUT RISE
AND FALL TIME PER OUTPUT PAIR FIGURE 11. TYPICAL POWER DISSIPATION vs FREQUENCY
PER OUTPUT PAIR
Typical Performance Characteristics (Continued)
AMBIENT TEMPERATURE (TA) = +25oC
8642
INPUT RISE AND FALL TIME (tr, tf) (ns)
10 102103104105
8
6
4
2
10
POWER DISSIPATION PER OUTPUT PAIR (PD) (µW)
8
6
4
2
102
8
6
4
2
103
8
6
4
2
104
8
6
4
2
105
8
6
4
2
86428642864286428642
106107
100kHz AT 15V
10kHz AT 15V
1kHz AT 5V
10kHz AT 5V
100kHz AT 5V
1kHz AT 15V
2
FREQUENCY (f) (Hz)
103104
864
8
6
4
2
8
6
4
2
8
6
4
2
8
6
4
2
104
103
102
101
105
POWER DISSIPATION (PD) (µW)
AMBIENT TEMPERATURE (TA) = +25oC
CL = 50pF
CL = 15pF
8
6
4
2
4
2
2105
8642
106
8642
107
864
INPUT tr = tp = 20ns
(PER OUTPUT PAIR)
VDD = 15V
10V
5V
5V
3V
Dimensions in parentheses are in millimeters
and are derived from the basic inch dimensions
as indicated. Grid graduations are in mils (10-3 inch)
11413
12
11
10
9
87 6
5
4
3
2
METALLIZATION: Thickness: 11kÅ−14kÅ, AL.
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane
BOND PADS: 0.004 inches X 0.004 inches MIN
DIE THICKNESS: 0.0198 inches - 0.0218 inches
DIE SIZE: X = 72 (69 - 77)
Y = 82 (79 - 87)
CD4041UBMS
