QS043-402-203712/5 3-M6 12.0 11.0 12.0 11.0 12.0 7(G2) 6(E2) 2-O6.5 6 5 4 9 16 9 23.0 23.0 17.0 24 16 14 9 9 14 4-fasten tab #110 t=0.5 14 LABEL 7 7 23 LABEL 30 +1.0 - 0 .5 30 +1.0 - 0.5 8 16 25 4 5 4 3-M5 25 7 6 3 21.2 7.5 5(E1) 4(G1) 2 1 4 18.0 7 3 2 48.0 16.0 14.0 1 15 6 48 0 .2 5 (C1) 3 94.0 80 0.25 4-O 6.5 6 (E2) 2 108 93 0 .2 5 14 11 14 11 14 62 11 13 20 (C2E1) 1 2 PDMB200BS12 PDMB200BS12C Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . PDMB200BS12 . PDMB200BS12C . . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 200A,= 15V . . ate-mitter hreshold oltage = 5V,= 200mA . . nput apacitance = 10V,= 0V,= 1MH 12,600 witching ime = 600V L= 3.0 G= 7.5 = 15V . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent eak orward oltage everse ecovery ime . . . = 200A,= 0V . . = 200A,= -10V i/t= 400A/s . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . QS043-402-203713/5 Fig.2- Output Characteristics (Typical) Fig.1- Output Characteristics (Typical) T C=25C 400 12V VGE=20V VGE=20V 350 15V 300 10V 250 200 9V 150 100 8V 50 0 1 2 3 4 10V 200 9V 150 8V 100 7V 50 0 5 0 1 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 200A 12 10 8 6 4 2 0 4 8 12 16 200A 10 8 6 4 2 0 4 8 14 100000 10 8 VCE =600V 6 400V 4 200V 100 0 0 200 400 600 800 1000 20 1200 VGE=0V f=1MHZ T C=25C 30000 Capacitance C (pF) 500 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 300000 12 200 16 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 600 300 12 Gate to Emitter Voltage VGE (V) RL =3.0( TC=25C 400 400A 12 0 20 IC=100A 14 Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 700 5 T C=125C Gate to Emitter Voltage VGE (V) 800 4 16 400A IC=100A 3 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 14 0 2 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) 16 11V 15V 250 7V 0 12V 300 Collector Current I C (A) Collector Current I C (A) 350 T C=125C 400 11V Cies 10000 3000 Coes 1000 300 2 100 0 1400 30 Cres 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage VCE (V) 50 100 200 QS043-402-203714/5 Fig.7- Collector Current vs. Switching Time (Typical) 2 VCC=600V RG=7.5( VGE=15V T C=25C Resistive Load tOFF 1.2 tf 0.8 tON 0.4 0 50 100 150 1 toff tf ton 0.3 tr (VCE) 0.1 tr(V CE) 0 VCC=600V IC=200A VGE=15V T C=25C Resistive Load 3 Switching Time t (s) 1.6 Switching Time t (s) Fig.8- Series Gate Impedance vs. Switching Time (Typical) 10 0.03 200 3 10 Collector Current IC (A) 1 tf 0.3 tON 0.1 tr(Ic) 2 0.03 0.01 1 toff 0.5 ton 0.2 tf 0.1 0.05 0 50 100 150 200 0.02 250 tr (IC ) 3 10 30 Collector Current IC (A) Series Gate Impedance RG (() Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 50 200 60 VCC=600V RG=7.5( VGE=15V T C=125C Inductive Load 50 EON Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) VCC=600V IC=200A VGE=15V T C=125C Inductive Load 5 Switching Time t (s) tOFF Switching Time t (s) Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=600V RG=7.5( VGE=15V T C=125C Inductive Load 3 100 Series Gate Impedance RG (() Fig.9- Collector Current vs. Switching Time 10 30 40 EOFF 30 20 ERR 10 0 VCC=600V IC=200A VGE=15V T C=125C Inductive Load 100 EON EOFF 30 ERR 10 3 0 50 100 150 200 250 300 3 Collector Current IC (A) 10 Series Gate Impedance RG (() 30 50 QS043-402-203715/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) T C=25C 300 T C=125C 200 100 0 1 2 3 IF=200A T C=25C T C=125C trr 300 100 IRrM 30 10 4 0 400 800 Forward Voltage VF (V) 1200 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area (Typical) 1000 RG=7.5( , VGE=15V, T C=125C 500 200 Collector Current I C (A) 0 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 400 FRD 3x10 -1 IGBT 1x10 -1 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 1 Shot Pulse 3x10 -4 10 -5 10 -4 10-3 10 -2 Time t (s) 10-1 1 101 1600 2000